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Springer eBooks

Excitonic Optical Nonlinearities, Four Wave Mixing and Optical Bistability in Multiple Quantum Well Structures

Alan Miller, Philip Keith Milsom, R. J. Manning

Published Jan 1, 1990• 0 citations
Publisher
DOI
10.1007/978-1-4613-0629-0_8

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We report time-resolved studies of transient gratings in room-temperature GaAs/AlGaAs multiple-quantum-well structures made using a subpicosecond laser system. Forward-traveling and counterpropagating four-wave mixing geometries produced carrier modulation either parallel or perpendicular to the quantum wells such that the highly anisotropic carrier diffusion could be monitored. Carrier heating and cross-well transport was monitored and geometrical control of the diffusion and resulting four-wave mixing time constant demonstrated. Measured diffraction efficiencies gave the refractive-index change of the order of Δn ~ 0.02 at the onset of saturation of the heavy-hole exciton nonlinearity. Implications for refractive optical bistability are discussed through a determination of the limiting conditions for switching.
This report describes progress in measuring and modeling the nonlinear optical properties of and picosecond carrier dynamics in bulk ternary alloys and multiple quantum wells (MQWs). Studies of the bulk alloy Al(x)Ga(1-x)As have been produced the first experimental isolation of the electron exchange energy in a dense electron-hole plasma, and the observation of enhanced band-gap renormalization as a consequence of alloy disorder, stimulated emission from the indirect gap for x-values as large as 0.52, and large optical nonlinearities from band filling, band-gap renormalization, and screening of the excitonic continuum states. The latter appear promising for room temperature absorptive and dispersive optical bistability. An exact theory of the influence of an intense radiation field on the excitonic energy levels of a MQW has been developed and has led to the prediction of two-wave mixing gain. Keywords: Nonlinear optics; Ultrafast phenomena; Multiple quantum wells; Band gap renormalization; Alloy disorder; Optical bistability.
Semiconductor multiple quantum well structures exhibit very large, room temperature, nonlinear refractive effects associated with resolvable excitonic features [1]. These nonlinearities may find use in all-optical devices if sufficient refractive index change can be achieved before the exciton completely saturates [2]. A unique aspect of band gap resonant optical, nonlinearities in quantum wells is the spatial confinement of the generated carriers within the layers. We have exploited the excitonic refractive nonlinearity in GaAs/AlGaAs multiple quantum wells in two separate degenerate four wave mixing configurations. These compare the intra-well and cross-well contributions to highly anisotropic carrier diffusion and also allow measurement of carrier relaxation rates and the saturation of the excitonic nonlinear refraction with increasing intensity.