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Research & Progress of SSE Solid State Electronics

SrS：Eu，Sm光存储材料的制备及表征

姜薇薇, 徐征

Published Jan 1, 2008• 0 citations
OpenAlex

Abstract

采用湿法在还原气氛下制备了SrS：Eu，Sm电子俘获光存储材料，研究了制备条件（灼烧温度、灼烧时间、助熔剂含量）对样品光激励发光性能的影响。XRD图谱表明，样品在750℃就可以形成SrS晶格。光谱分析表明，先将样品用紫外光饱和激发后，再用980nm半导体激光照射，具有光激励发光现象，发光峰值位于599nm。对这种稀土掺杂硫化物材料的光存储机理进行了探讨。

Related papers

SrS：Eu与SrS：Eu,Sm中电子陷阱与光存储研究

何志毅, 王永生, 徐叙

对SrS:Eu和SrS:Eu,Sm激发初始阶段的荧光上升过程和余辉进行了研究，并进一步考证其中 电子陷阱的属性.通过两种样品和两个阶段的比较，对陷阱数量和深度的变化、量子效率以 及电子俘获和释放、复合过程进行了分析，发现Sm离子并不影响陷阱的数量.利用吸收光谱 方法研究了SrS:Eu,Sm中电子由陷阱能级向导带的跃迁.通过陷阱饱和-倒空吸收谱差，即激 励吸收谱及其强度随Eu,Sm浓度的变化，探讨了掺杂浓度对陷阱浓度和光存储饱和量的影响. 结果表明Sm离子的作用是使陷阱能级加深从而能稳定地储存电子.通过激励吸收谱峰值强度 可确切地比较光存储材料在这方面的性能，并与光激励谱的测量方法作了对照.

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Eu-Sr中激光感生碰撞能量转移的数值计算

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利用作者发展的四能级理论对Eu-Sr中的3个激光感生碰撞能量转移过程进行了数值计算,并与三能级近似理论模型的计算结果进行了比较. 理论计算结果表明:只有当|ω43|》|ω21|时,利用三能级近似理论才能获得令人满意的计算结果;而当|ω43|值和|ω21|值的大小相近时,三能级近似理论就不能用来描述激光感生碰撞跃迁问题,而四能级理论则适合于任何情况下的激光感生碰撞能量转移问题.

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展示了一种结合光学黏团冷却和轴向边带冷却的方法，并用于降低一维光晶格中87Sr原子温度。通过优化689 nm激光的频率和光强，光学黏团冷却成功地将原子径向温度从14.6 μK降低至8.0 μK，而轴向边带冷却则通过拉曼跃迁的方式将原子的轴向温度从5.6 μK降低至1.2 μK，使得原子的平均外部振动态从0.82降至0.02。此外，通过观测拉比振荡和不同阱深下的原子数，证明了该冷却方法可以延长原子相干时间和增加低温原子数。此方法有助于延长原子相干时间，增加浅光晶格中的原子数量，从而提升光晶格原子钟等量子应用的性能。

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Three-center Auger excitation mechanism of ytterbium intrashell emission in ZnS

Krzysztof Swiatek, A. Suchocki, M. Godlewski

A new, very efficient excitation mechanism of Yb intrashell 4f-4f emission in ZnS is reported. We show that the energy transfer from donor-acceptor pairs to Yb sites leads to Yb ionization (Yb3+⇒Yb2+), followed by capture of ionized carriers via the Yb3+ external excited state (bound exciton state), an energy transfer to the Yb3+ 4f shell, and Yb3+ 4f-4f radiative recombination. Since three centers (donor, acceptor, and Yb) participate in the energy transfer process in which Yb is first ionized, the above excitation mechanism is of three-center Auger transition nature. A similar excitation mechanism is expected for Eu, Sm, and Tm in ZnS, i.e., for these rare earth (RE) ions which can change their charge state from 3+ to 2+ in this lattice. For wider band-gap sulfides, such as CaS or SrS, this mechanism can be of importance also for other REs, such as, for example, Pr, Dy, and Er.

Applied Physics Letters•Jul 2, 1990•10 citations
采用湿法在还原气氛下制备了SrS：Eu，Sm电子俘获光存储材料，研究了制备条件（灼烧温度、灼烧时间、助熔剂含量）对样品光激励发光性能的影响。XRD图谱表明，样品在750℃就可以形成SrS晶格。光谱分析表明，先将样品用紫外光饱和激发后，再用980nm半导体激光照射，具有光激励发光现象，发光峰值位于599nm。对这种稀土掺杂硫化物材料的光存储机理进行了探讨。
对SrS:Eu和SrS:Eu,Sm激发初始阶段的荧光上升过程和余辉进行了研究，并进一步考证其中 电子陷阱的属性.通过两种样品和两个阶段的比较，对陷阱数量和深度的变化、量子效率以 及电子俘获和释放、复合过程进行了分析，发现Sm离子并不影响陷阱的数量.利用吸收光谱 方法研究了SrS:Eu,Sm中电子由陷阱能级向导带的跃迁.通过陷阱饱和-倒空吸收谱差，即激 励吸收谱及其强度随Eu,Sm浓度的变化，探讨了掺杂浓度对陷阱浓度和光存储饱和量的影响. 结果表明Sm离子的作用是使陷阱能级加深从而能稳定地储存电子.通过激励吸收谱峰值强度 可确切地比较光存储材料在这方面的性能，并与光激励谱的测量方法作了对照.
利用作者发展的四能级理论对Eu-Sr中的3个激光感生碰撞能量转移过程进行了数值计算,并与三能级近似理论模型的计算结果进行了比较. 理论计算结果表明:只有当|ω43|》|ω21|时,利用三能级近似理论才能获得令人满意的计算结果;而当|ω43|值和|ω21|值的大小相近时,三能级近似理论就不能用来描述激光感生碰撞跃迁问题,而四能级理论则适合于任何情况下的激光感生碰撞能量转移问题.
提出一种Er3+改进的电子俘获光存储材料SrS∶Eu0.002,Sm0.002,Erx,其中,0≤x≤0.006。通过水热反应,研究了不同退火温度对荧光粉晶相形成的影响,以及不同含量的Er3+对荧光粉的发光性质以及光存储特性的影响。结果表明,Er3+的引入导致荧光增强及光存储特性提高。当Er3+的摩尔分数x=0.003时,荧光强度、光激励发光强度及光存储量出现最大值,分别为不含Er3+时的1.9倍、2倍和3.5倍。同时,Er3+的掺入不改变样品的晶体结构和衰减特性。
A new concept for an erasable optical memory is demonstrated using stimulated electronic transition (SET). Large bandgap semiconductors are suitable materials for the SET medium. We have investigated the properties of MgS:Eu, Sm and SrS:Eu, Sm as possible media for the SET process. Quantum storage is achieved in the form of charges in deep levels in the medium and stimulated radiative recombination is used as the reading process. Unlike magneto-optic (M-O) and phase change (PC) processes, optical writing, reading and erasing are achieved without localized heating. The SET process will have an inherently faster data transfer rate and a higher storage density, and the medium will be more durable than the M-O and PC media. A possible application of the SET process in neural networks is also discussed.
展示了一种结合光学黏团冷却和轴向边带冷却的方法，并用于降低一维光晶格中87Sr原子温度。通过优化689 nm激光的频率和光强，光学黏团冷却成功地将原子径向温度从14.6 μK降低至8.0 μK，而轴向边带冷却则通过拉曼跃迁的方式将原子的轴向温度从5.6 μK降低至1.2 μK，使得原子的平均外部振动态从0.82降至0.02。此外，通过观测拉比振荡和不同阱深下的原子数，证明了该冷却方法可以延长原子相干时间和增加低温原子数。此方法有助于延长原子相干时间，增加浅光晶格中的原子数量，从而提升光晶格原子钟等量子应用的性能。
A new, very efficient excitation mechanism of Yb intrashell 4f-4f emission in ZnS is reported. We show that the energy transfer from donor-acceptor pairs to Yb sites leads to Yb ionization (Yb3+⇒Yb2+), followed by capture of ionized carriers via the Yb3+ external excited state (bound exciton state), an energy transfer to the Yb3+ 4f shell, and Yb3+ 4f-4f radiative recombination. Since three centers (donor, acceptor, and Yb) participate in the energy transfer process in which Yb is first ionized, the above excitation mechanism is of three-center Auger transition nature. A similar excitation mechanism is expected for Eu, Sm, and Tm in ZnS, i.e., for these rare earth (RE) ions which can change their charge state from 3+ to 2+ in this lattice. For wider band-gap sulfides, such as CaS or SrS, this mechanism can be of importance also for other REs, such as, for example, Pr, Dy, and Er.