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IEICE Transactions on Electronics

Multi-Channel High T_c SQUID (Special Section on Superconducting Devices)

Hideo Itozaki, Saburo Tanaka, Tatsuoki Nagaishi, Hisashi Kado

Published Aug 25, 1994• 1 citation
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Applied Physics Letters•Dec 28, 1998•5 citations
The predominantly dx2−y2-pairing symmetry in most high-Tc superconductors provides the opportunity to fabricate Josephson junction circuits in which part of the junctions are biased by a phase difference of the superconducting order parameter of π. We present fabrication and measurements of an all high-Tc dc superconducting quantum interference device (dc SQUID) realized with thin-film technology, of which the Josephson junctions consist of one standard junction and one junction with a π-phase shift. The characteristics of the π-SQUID are compared with the properties of a standard high-Tc SQUID.
A high-TC rf superconducting quantum interference device (SQUID) readout with a cryogenic preamplifier was developed. The noise figure of the preamplifier at 350MHz was about 0.92dB at room temperature and 0.35dB at 77K. For a high-TC yttrium barium copper oxide rf SQUID coupled with a lumped element tank circuit with a resonant frequency of about 360MHz, the white flux noise was about 25μΦ0∕√Hz and 22μΦ0∕√Hz when the preamplifier was at room temperature and at 77K, respectively. The flux noise was only reduced by about 12% using the cryogenic preamplifier. As the thermal noise of the SQUID and the noise generated by the tank circuit are already higher than the preamplifier noise, cooling the preamplifier has only a small effect of the system noise, when the SQUID is operated at 77K. Lower operating temperatures, e.g., when using a SQUID made from MgB2, might justify the use of a cooled preamplifier.
The voltage modulation depths, ΔV of high-Tc direct current superconducting quantum interference devices (SQUIDs) with resistors connected in parallel with their inductances were investigated. Both the junctions and resistors in the SQUIDs were fabricated using focused electron-beam irradiation. The effect of varying the resistor value (using focused ion-beam trimming) and the screening parameter βL (by varying the temperature and hence the junction critical current) were studied. Significant enhancement of ΔV relative to an equivalent unshunted SQUID for βL values up to 50 was observed, and the most effective shunt resistor value was found to be approximately equal to the junction resistance.