量子存储（Quantum memory）

Ramón Alonso‐Sanz

Nadav Drechsler, Yuval Oreg, Dorit Aharonov

The study of quantum memories out of thermal equilibrium is motivated both by the need for memories that withstand realistic noise in fault-tolerant quantum computers and by the fundamental question of when quantum memory can emerge in autonomous many-body systems. We establish a general equivalence between CSS-based quantum memories subject to Pauli noise and classical memories via two associated probabilistic processes. In the asynchronous setting, where the quantum dynamics is generated by a Lindbladian, we identify a broad class of syndrome-based Lindbladians for which the quantum memory problem is equivalent to memory in continuous-time classical Markov dynamics. In the synchronous setting, we introduce syndrome-based probabilistic cellular automata (SPCAs) and establish a one-to-one correspondence between their classical memories and CSS-based quantum memories under local quantum channels. This framework provides a systematic route for deriving and constructing quantum memories from classical probabilistic processes, and recovers known results, including the fact that the 4D toric code is a quantum memory in the presence of thermal noise. As an application, we give the first rigorous proof that the 4D toric code with Toom's rule is a quantum memory in the presence of local Pauli noise, provided the error is below a constant threshold. We prove this both for the corresponding synchronous, PCA-type quantum dynamics and for a Floquet Lindbladian. More generally, we show that classical memory in an SPCA can be lifted to a quantum memory under Floquet Lindbladian dynamics; whether this can be done with a time-independent Lindbladian remains open. Our results provide a general framework for relating classical and quantum memory, shed light on the conditions for fully autonomous quantum memories, and may guide the construction of provable autonomous quantum memories in low dimensions.

徐芳芳

他走过很多地方的桥，看过很多地方的云．感受过真正的世界一流，却还是选择回来，完成一个属于自己的梦想。 他，就是华南师范大学先进材料研究所研究员高兴森。他时刻准备着．想要追求最好的量子信息存储材料研究。

Chenxu Liu, Meng Wang, Samuel A. Stein +2 more

Memory is an indispensable component in classical computing systems. While the development of quantum computing is still in its early stages, current quantum processing units mainly function as quantum registers. Consequently, the actual role of quantum memory in future advanced quantum computing architectures remains unclear. With the rapid scaling of qubits, it is opportune to explore the potential and feasibility of quantum memory across different substrate device technologies and application scenarios. In this paper, we provide a full design stack view of quantum memory. We start from the elementary component of a quantum memory device, quantum memory cells. We provide an abstraction to a quantum memory cell and define metrics to measure the performance of physical platforms. Combined with addressing functionality, we then review two types of quantum memory devices: random access quantum memory (RAQM) and quantum random access memory (QRAM). Building on top of these devices, quantum memory units in the computing architecture, including building a quantum memory unit, quantum cache, quantum buffer, and using QRAM for the quantum input-output module, are discussed. We further propose the programming model for the quantum memory units and discuss their possible applications. By presenting this work, we aim to attract more researchers from both the Quantum Information Science (QIS) and classical memory communities to enter this emerging and exciting area.

Christoph Simon, Mikael Afzelius, J. Appel +21 more

Christoph Simon, M. Afzelius, J. Appel +21 more