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Undergraduate lecture notes in physics

The Tunneling Effect and Transport Properties

Pedro Pereyra Padilla

Published Jan 1, 2012• 1 citation
Publisher
DOI
10.1007/978-3-642-29378-8_4

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We study the effect of an electrostatic coupling between a scanning tunneling microscope tip and a Luttinger liquid wire on the tunneling current and noise between the two. Solving the Dyson equations nonperturbatively for a local interaction potential, we derive the Green's functions associated to the wire and to the tip. Interestingly, the electrostatic coupling leads to the existence of new correlators, which we call mixed Green's functions, which are correlators between the bosonic fields of the wire and the tip. Next, we calculate the transport properties up to second order with the amplitude of the tunnel transfer; the profile of the tunneling current is strongly modified by the presence of screening. The zero-frequency noise is modified in a similar way but the Fano factor remains unchanged. We also consider the effect of the screening on the asymmetry of the finite-frequency nonsymmetrized noise and on the conductance.
We study a transmission line resonator which is driven by electrons tunneling through a voltage-biased tunnel junction. Using the Born-Markovian quantum master equation in the polaron basis we investigate the nonequilibrium photon state and emission spectrum of the resonator as well as properties of the transport current across the tunnel junction and its noise spectrum. The electroluminescence is optimized, with maximum peak height and narrow linewidth, when the back-action of the tunnel junction on the resonator and the damping of the resonator are similar in strength. For strong coupling between the resonator and tunnel junction, multiphoton effects create signatures in the transport current and current noise spectrum.
In this paper we analyze the main transport properties of a simple resonant magnetic tunnel junction ͑FM-IS-METAL-IS-FM structure͒ taking into account both elastic and magnon-assisted tunneling processes at low voltages and temperatures near 0 °K.We show the possibility of magnetoresistance inversion as a consequence of inelastic processes and spin-dependent transmission coefficients.Resonant tunneling can also explain the effect of scattering by impurities located inside an insulating barrier.