Silicon-based integrated single spin quantum information technology [SISSQIT]

Implementation of large-scale quantum networks have the potential to augment the capabilities of existing quantum information technologies. By linking quantum processors over photonic channels, future quantum networks could enable applications such as remote quantum sensing, distributed quantum computing, and secure quantum communication. Atomic defects in solids are readily integrated with photonic structures, making them promising candidates for use in quantum networking devices. In particular, the silicon material platform holds great promise due to the technologically mature silicon electronic and photonic industries. The T center defects in silicon possess telecom O-band optical transitions, as well as long-lived electronic and nuclear spins, making it the focus of particular interest. These spin and optical properties of single T centers, together with their accessibility to the existing integrated electronic and photonic technologies, opening the door to modular long-distance quantum networking technologies built on the T center platform. This work outlines the integration of single T centers with a silicon photonic crystal cavity; we observe cavity-enhanced fluorescence emission, resulting in a decay rate enhancement factor of F = 6.89 compared to the bulk emission rate. Through the use of silicon photonic circuits and an angle-polished fiber for light coupling, we achieve a maximum zero phonon line photon outcoupling rate of 73.3 kHz. The design and fabrication of the nanophotonic cavity used in experiment is detailed. This work represents a major step towards use of the silicon T center as a telecom spin-photon interface in future quantum networking applications.Implementation of large-scale quantum networks have the potential to augment the capabilities of existing quantum information technologies. By linking quantum processors over photonic channels, future quantum networks could enable applications such as remote quantum sensing, distributed quantum computing, and secure quantum communication. Atomic defects in solids are readily integrated with photonic structures, making them promising candidates for use in quantum networking devices. In particular, the silicon material platform holds great promise due to the technologically mature silicon electronic and photonic industries. The T center defects in silicon possess telecom O-band optical transitions, as well as long-lived electronic and nuclear spins, making it the focus of particular interest. These spin and optical properties of single T centers, together with their accessibility to the existing integrated electronic and photonic technologies, opening the door to modular long-distance quantum networking technologies built on the T center platform. This work outlines the integration of single T centers with a silicon photonic crystal cavity; we observe cavity-enhanced fluorescence emission, resulting in a decay rate enhancement factor of F = 6.89 compared to the bulk emission rate. Through the use of silicon photonic circuits and an angle-polished fiber for light coupling, we achieve a maximum zero phonon line photon outcoupling rate of 73.3 kHz. The design and fabrication of the nanophotonic cavity used in experiment is detailed. This work represents a major step towards use of the silicon T center as a telecom spin-photon interface in future quantum networking applications.

Jul 25, 20240 citations

Single-photon emitters and spin-photon interfaces in silicon

Kilian Sandholzer, Ian Berkman, Peter Deák +5 more

Single photons enable the distribution of quantum information over large distances and thus play a major role in quantum technologies such as communication and computing. Solid-state emitters are practical and efficient sources of single photons that can be manufactured in large numbers. When combined with a spin, the resulting spin-photon interfaces can store quantum states for extended periods and serve as the basis for quantum networks and repeaters. Among the many host materials explored over the past few decades, silicon stands out for its advanced nanofabrication, the maturity of its integrated photonics and microelectronics, and its high isotopic purity, which leads to exceptionally long spin coherence. These properties position silicon single-photon emitters and spin-photon interfaces among the most promising hardware platforms for implementing quantum networks and distributed quantum information processors. This review summarizes the current state of the art and open challenges towards coherent single-photon sources and scalable spin-photon interfaces based on color centers and erbium dopants in nanophotonic silicon structures.Single photons enable the distribution of quantum information over large distances and thus play a major role in quantum technologies such as communication and computing. Solid-state emitters are practical and efficient sources of single photons that can be manufactured in large numbers. When combined with a spin, the resulting spin-photon interfaces can store quantum states for extended periods and serve as the basis for quantum networks and repeaters. Among the many host materials explored over the past few decades, silicon stands out for its advanced nanofabrication, the maturity of its integrated photonics and microelectronics, and its high isotopic purity, which leads to exceptionally long spin coherence. These properties position silicon single-photon emitters and spin-photon interfaces among the most promising hardware platforms for implementing quantum networks and distributed quantum information processors. This review summarizes the current state of the art and open challenges towards coherent single-photon sources and scalable spin-photon interfaces based on color centers and erbium dopants in nanophotonic silicon structures.

quant-pharXiv:2603.02201Mar 3, 2026

Spin-based Quantum Information Processing in Silicon

Andrew S. Dzurak

International Conference on Solid State Devices and Materials (SSDM)Sep 23, 20100 citations

Optical observation of single spins in silicon

A. T. K. Kurkjian, Daniel B. Higginbottom, Camille Chartrand +18 more

The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work we produce tens of thousands of individually addressable ` $T$ centre' photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work we produce tens of thousands of individually addressable `$T$ centre' photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.

arXiv:2103.07580Mar 13, 20210 citations

Spectral tuning of single T centres by the Stark effect

Michael Dobinson, Felix Hufnagel, Simon A. Meynell +8 more

Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance, and demonstrate tunable lifetime reduction across the cavity resonance. A model of the joint excitation probability shows an orders-of-magnitude increase in entanglement rate by tuning distinct emitters into mutual resonance. Luminescence modulation at high reverse biases reveals a transition to a dark charge state. Finally, bias-induced modulation of the optical transition splitting uncovers a potential mechanism for electrically driven excited-state spin mixing via spin-orbit coupling. Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces and the number of devices per chip available for large-scale entanglement and quantum information technologies.Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance, and demonstrate tunable lifetime reduction across the cavity resonance. A model of the joint excitation probability shows an orders-of-magnitude increase in entanglement rate by tuning distinct emitters into mutual resonance. Luminescence modulation at high reverse biases reveals a transition to a dark charge state. Finally, bias-induced modulation of the optical transition splitting uncovers a potential mechanism for electrically driven excited-state spin mixing via spin-orbit coupling. Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces and the number of devices per chip available for large-scale entanglement and quantum information technologies.

quant-pharXiv:2604.25170Apr 29, 2026

T

centre' photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.