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Scientific Reports

Effects of non-magnetic impurities on transport and spectral properties of a hole-doped Mott insulator

Harun Al Rashid, Dheeraj Kumar Singh

Published Nov 29, 2025• 0 citations
Publisher

Abstract

We study the nature of electronic states induced by the non-magnetic impurities in a hole-doped Mott insulator. We further examine the consequences of doping on the transport and spectral properties. By employing exact diagonalizaton + Monte-Carlo simulation based on the many-body computational techniques, which allows for the thermal and spatial fluctuations besides a fine resolution in the momentum-space spectral function, the current investigation unravels the degree of localization of the electronic states induced by the impurity atoms as a function of temperature. The major consequences of doping impurity, which introduces holes in the systems, include the appearance of impurity states just above the Fermi level and only in the vicinity of momenta where the gap opens along the normal state Fermi surface in the insulating state. The electronic state at the impurity site is split because of the antiferromagnetic background. The pseudogap-like behavior of the density of states is weakened as reflected by the enhanced charge fluctuations even away from the impurity site at an elevated temperature. Our study also reflects on the degree of improvement in conductivity as well as particle-hole asymmetry introduced in the momentum-resolved spectral function, which maximizes towards the high-symmetry points like ([Formula: see text].

DOI
10.1038/s41598-025-29614-x

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We study the nature of electronic states induced by the non-magnetic impurities in a hole-doped Mott insulator. We further examine the consequences of doping on the transport and spectral properties. By employing exact diagonalizaton + Monte-Carlo simulation based on the many-body computational techniques, which allows for the thermal and spatial fluctuations besides a fine resolution in the momentum-space spectral function, the current investigation unravels the degree of localization of the electronic states induced by the impurity atoms as a function of temperature. The major consequences of doping impurity, which introduces holes in the systems, include the appearance of impurity states just above the Fermi level and only in the vicinity of momenta where the gap opens along the normal state Fermi surface in the insulating state. The electronic state at the impurity site is split because of the antiferromagnetic background. The pseudogap-like behavior of the density of states is weakened as reflected by the enhanced charge fluctuations even away from the impurity site at an elevated temperature. Our study also reflects on the degree of improvement in conductivity as well as particle-hole asymmetry introduced in the momentum-resolved spectral function, which maximizes towards the high-symmetry points like ([Formula: see text].
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behavior. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band. To this end, we focus on the two-dimensional Hubbard model. Because the charge gap arises from on-site correlations, we have been refining the nonperturbative approach of Matsumoto and Mancini [Phys. Rev. B 55, 2095 (1997)] which incorporates local physics. Crucial to this method is a self-consistent two-site dynamical cluster expansion which builds in the nearest-neighbor energy scale J. At half-filling, we find that the spectral function possesses a gap of order U and is devoid of any coherent quasiparticle peaks although ordering or charge fractionalization are absent. At low temperatures, local antiferromagnetic correlations emerge. In the doped case, we find that the Fermi surface exceeds the Luttinger volume. The breakdown of Luttinger's theorem in the underdoped regime is traced both to the dynamically generated Mott gap as well to a nonvanishing of the imaginary part of the self-energy at the Fermi level. Spectral weight transfer across the Mott gap also emerges as a ubiquitous feature of a doped Mott insulator and suggests that high- and low-energy scales are inseparable. Additionally in the underdoped regime, we find that a pseudogap exists in the single-particle density of states as well as in the heat capacity. The pseudogap (which is set by the energy scale t2/U){t}^{2}/U)t2/U) is argued to be a ubiquitous feature of a lightly doped Mott state and simply represents the fact that hole transport involves double occupancy. In analogy with the Mott gap and antiferromagnetism, we propose that ordering may also accompany the formation of a pseudogap. We suggest a current pattern within a one-band model that preserves translational but breaks time-reversal symmetry along the canonical x and y axes but not along $x=\ifmmode\pm\else\textpm\fi{}y$ that is consistent with the experimental observations. Finally, we show that the Hall coefficient in a doped Mott insulator must change sign at a doping level x<1/3.x<1/3.x<1/3. The sign change is tied to a termination of strong correlation physics in the doped Mott state.
Motivated by the recent measurements of the spatial distribution of single particle excitation states in a hole-doped Mott insulator, we study the effects of impurity on the in-gap states, induced by the doped holes, in the Hubbard model on the square lattice by the cluster perturbation theory. We find that a repulsive impurity potential can move the in-gap state from the lower Hubbard band towards the upper Hubbard band, providing a good account for the experimental observation. The distribution of the spectral function in the momentum space can be used to discriminate the in-gap state induced by doped holes and that by the impurity. The spatial characters of the in-gap states in the presence of two impurities are also discussed and compared to the experiment.
We compute high-resolution angle-resolved photoemission spectroscopy of the Hubbard model using the unbiased determinant quantum Monte Carlo algorithm, revealing an asymmetry between electron and hole doping. Electron doping exhibits more coherent quasiparticles and stronger antiferromagnetic correlations compared to hole doping. At low doping, a nodal-antinodal dichotomy on the Fermi surface is observed, similar to cuprate experiments. The dichotomy reflects the momentum dependence of the Mott gap, as manifested in both the spectral function and the self-energy. For hole doping, we observe a transition towards the pseudogap, without signature of pocket formation. The simulated nuclear magnetic resonance pseudogap temperatures do not necessarily agree with the temperature determined by spectroscopy. These findings collectively suggest the pseudogap is a smooth crossover driven by strong correlations.
With the hierarchical Green’s function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green’s function and related multiple-point correlation functions, and find that the separation of the spin and charge degrees of freedom of the electrons is an intrinsic character of the doped Mott insulator. For enough of large on-site repulsive Coulomb interaction, we show that the spectral weight of the one-particle Green’s function is proportional to the hole doping concentration that is mainly produced by the charge fluctuation of electrons, while the excitation spectrum of the electrons is composed of two parts: One is contributed by the spin fluctuation of the electrons, which is proportional to the hole doping concentration, and another one is coming from the coupling between the charge and spin fluctuations of the electrons that takes the maximum at undoping. All of these low energy/temperature physical properties originate from the strong on-site Coulomb interaction. The present results are consistent with the spectroscopy observations of the cuprate superconductors and the numerical calculations in normal state above the pseudogap regime.
Unraveling the nature of the doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of spectral properties upon doping Mott insulating states by utilizing the cluster perturbation theory on the Hubbard and t−−Jt--Jt−−J-like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is, in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.
In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band picture. Here, based on an analysis of the quantum numbers and the overlaps of relevant states, as well as through a demonstration using the ladder and bilayer $t\text{\ensuremath{-}}J$ models, it is shown that in a continuous Mott transition due to hole doping, the magnetically excited states of the Mott insulator generally emerge in the electron-addition spectrum with the dispersion relation shifted by the Fermi momentum in the momentum region where the lower Hubbard band is not completely filled. This implies that the dispersion relation of a free-electron-like mode in the electron-addition spectrum eventually transforms into essentially the momentum-shifted magnetic dispersion relation of the Mott insulator, while its spectral weight gradually disappears toward the Mott transition. This feature reflects the spin-charge separation of the Mott insulator.