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Absorption Spectrum Based Three-Dimensional Atomic Microscopy in Five-Level Systems with Tunable Localization

Najm Uddin, Attaullah Khan, Sohana Bahadar, Muhammad Ibrahim, Yasir Muhammad Amin Khan, M. Salman Khan

Published Oct 15, 2025• 0 citations
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Abstract

Abstract In this study we explore the microscopy of atoms in three dimensions using a new technique of absorption spectrum in an atomic system with five levels of one and two atoms microscopy, Wall-like microscopy & ellipsoidal like microscopy observed. The position and probability of localized atoms are controlled and modified by tunings, the phases, strength, and direction of the applied driving fields. The current work may have potential applications in laser cooling, microscopy, and atom nano-lithography.

DOI
10.21203/rs.3.rs-7552453/v1

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This study investigates wall-like, ellipsoidal, and cylindrical structures of atomic localization using an innovative spectrum absorption method including three distinct levels of single atom localization at both the upper and lower sections. The phases, detunings, intensities, and orientations of the applied control fields govern and alter the probability and location of localized atoms. Modified configurations of atom localization are beneficial for Bose-Einstein condensation, atom nanolithography, and laser cooling techniques.
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Abstract We investigate one-dimensional position microscopy of a three-level atom moving through a stationary wave region under the condition of electromagnetically induced transparency. The precise position information of an atom is observed on the resonance absorption and dispersion distribution spectrum of a weak probe field. Single and multiple localization peaks are observed in specific directions of the corresponding wave numbers and phase of the standing wave fields. The strength of space-independent Rabi frequency reduces the position uncertainty in the localized peaks without disturbing the probability of the atom. In a hot atomic medium the localized probability of an atom is reduced which depends upon the temperature of that medium. Our results provide useful applications in the development of laser cooling, atom nanolithography and Bose–Einstein condensation.
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A new approach for achieving two - dimensional (2D) atom localization microscopy based on the projection of three - dimensional (3D) localization in the plane of the detector is described in the present work. Spatial variation of the position-dependent 2D-localization pattern in the xy-plane is obtained with the shifting of the position of the detector along the z-axis under the parallel- and cross- axis configurations of the standing-wave fields. An attempt is made to study the 2D-localization characteristics in the specific parametric conditions for which the localization structures evolve with different shapes eventually leading to 100% detection probability of the atom both in the sub-wavelength and sub-half-wavelength regimes. The scope of tuning the cross-axis configuration over a wide range adds novelty and robustness to this model. Apart from the 2D-localization, various localization patterns with eight- to single-peak structures appear as interesting outcomes through the efficient manipulation of control parameters in the study of one-dimensional (1D) atom localization. The application of the traveling-wave field or its equivalent appears to be unique in achieving high-precision localization with maximal probability (100%) in both the 1D and 2D field-configuration schemes. Proper tuning of the traveling wave accompanied by the standing wave in the 1D scheme results in the single-peak localization in the sub-half-wavelength range. As a whole, the present work seems to be very much efficient for high-precision optical lithography.