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IEEE Research and Applications of Photonics in Defense Conference (RAPID)

A Random Number Generator Using a Quantum Emitter in Nanoindented Hexagonal Boron Nitride

Dante J. O’Hara, Joel Q. Grim, Kathleen M. McCreary, Hsun‐Jen Chuang, Mehmet Ali Noyan, Enrique D. Cobas, Berend T. Jonker

Published Aug 13, 2025• 0 citations
Publisher

Abstract

High-purity quantum emitters in hexagonal boron nitride (hBN) hold the potential for use as high-quality quantum random number generators (QRNGs). In this work, we verify a QRNG using a deterministically placed quantum emitter in nanoindented hBN with$\mathbf{\sim 9 5 \%}$single-photon purity.

DOI
10.1109/rapid64712.2025.11151422

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•Dec 30, 2019•2 citations
High-purity quantum emitters in hexagonal boron nitride (hBN) hold the potential for use as high-quality quantum random number generators (QRNGs). In this work, we verify a QRNG using a deterministically placed quantum emitter in nanoindented hBN with∼95%\mathbf{\sim 9 5 \%}∼95%single-photon purity.
Abstract Quantum random number generation (QRNG) harnesses the intrinsic randomness of quantum mechanical phenomena. On-chip photonic circuitry provides a robust and versatile platform that can address and explore fundamental questions in quantum as well as classical physics. Likewise, integrated waveguide-based architectures hold the potential for intrinsically scalable, efficient and compact implementations of photonic QRNG. Here, we harness the quantum emission from the two-dimensional material hexagonal boron nitride an emerging atomically thin medium that can generate single photons on demand while operating at room temperature. By means of a customized splitter arrangement, we achieve true random number generation through the measurement of single photons exiting one of four designated output ports, and subsequently verify the randomness of the sequences in accordance with the National Institute of Standards and Technology benchmark suite. Our results clearly demonstrate the viability and efficiency of this approach to on-chip deterministic random number generators.
Sources of pure and indistinguishable single-photons are critical for near-future optical quantum technologies. Recently, color centers hosted by two-dimensional hexagonal boron nitride (hBN) have emerged as a promising platform for high luminosity room temperature single-photon sources. Despite the brightness of the emitters, the spectrum is rather broad and the single-photon purity is not sufficient for practical quantum information processing. Here, we report integration of such a quantum emitter hosted by hBN into a tunable optical microcavity. A small mode volume of the order of λ 3 allows us to Purcell enhance the fluorescence, with the observed excited state lifetime shortening. The cavity significantly narrows the spectrum and improves the single-photon purity by suppression of off-resonant noise. The complete device, including all optics, driving electronics, and control units, is compact and integrated in a small volume of 10 × 10 × 10 cm 3, allowing for portable usage in mobile applications.
Single-photon sources are crucial components for building quantum networks and communications, but their optical coherent control remains a significant challenge in the development of quantum technologies. Recently, single-photon sources in atomically thin 2D materials such as transition metal dichalcogenides and van der Waals materials have emerged as promising solid-state quantum light emitters [1]. Hexagonal boron nitride (hBN) is a 2D insulator, which hosts optically active states in its band gap that efficiently emit single photons even at room temperature. The wide range of emission wavelengths, narrow emission lines, and convenient tunability of these hBN emitters make them particularly interesting for quantum sensing and wavelength division multiplexed quantum communications. They can also be found in commercially available nanocrystals, making them ideal for creating large arrays of single-photon emitters [2] and efficient coupling to photonic structures, such as 3D-printed microlenses [3].
Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines, particularly in the visible range, which can be difficult to distinguish from signals arising from organic or process-induced contamination during sample preparations and handling. This ambiguity limits both the reproducibility of emitter generation and the reliable identification of truly intrinsic quantum defects. This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation. We employ hyperspectral imaging, thermal annealing, and oxygen plasma etching to investigate the origin of the green-yellow emitters in electron-irradiated hBN. The combined results not only rule out organic contamination as the source of emission but also provide insight into the spectral variability, thermal stability, and vertical localization of the emitters generated in electron-irradiated hBN that was created without any pre- or post-processing. In addition, our experiments demonstrate the feasibility of creating stable emitters in hBN with thicknesses below 10 nm. These findings provide practical guidance for the identification and controlled implementation of hBN-based single-photon emitters in quantum photonic devices.