Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a semiconductor quantum dot device in a room-temperature atomic vapor memory. A deterministically fabricated InGaAs quantum dot light source emits single photons at the wavelength of the cesium D1 line at 895\,nm which exhibit an inhomogeneously broadened linewidth of 5.1(7)\,GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3)\,ns at an internal efficiency of
ηint=0.6(1)%. Our results significantly expand the application space of both room-temperature vapor memories and semiconductor quantum dots in future quantum network architectures.
Abstract Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate storage of single photons from a semiconductor quantum dot (QD) device in a room-temperature atomic vapor memory and their on-demand retrieval. A deterministically fabricated InGaAs QD light source emits single photons at the wavelength of the cesium D1 line at 895 nm which exhibit an inhomogeneously broadened linewidth of 5.1(7) GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3) ns. A maximum internal efficiency of η int = 0.6 ( 1 ) % is achieved. Our results expand the application space of both room-temperature vapor memories and semiconductor QDs in future quantum network architectures.
Quantum memories are a key technology for distributing entanglement in large-scale quantum networks. They allow for coherent control and temporal reordering of single photons which is a fundamental prerequisite for quantum repeaters, local synchronization and buffering of quantum information. These applications require bright and pure sources of indistinguishable single photons, as well as long-lived, efficient, and high-bandwidth quantum memories with minimal noise. The demonstration of robust, scalable, multi-mode photonic interfaces between different types of quantum memories and single-photon sources remains an open experimental challenge. This work contributes to this endeavor by investigating a heterogeneous interface between a semiconductor quantum dot single-photon source and a room-temperature atomic vapor memory. The first part of this work presents the first room-temperature, ladder-type atomic vapor memory that operates on the Cs D1 line at 895\,nm. The performance of the memory is characterized using attenuated laser pulses at the single-photon level. The memory achieves an internal efficiency of
ηint=15(1)% at a storage time of
τs=17.4(2)\,ns. We derive a quantitative benchmark for the memory compatibility with quantum dot single-photon sources. The memory's high signal-to-noise ratio of 830(80), and its spectral acceptance window of
W=560\,MHz promise compatibility with single photons from state-of-the-art InGaAs quantum dot devices. Furthermore, we present such a nano-integrated quantum dot device and characterize its optical properties. We measure a radiative lifetime of 1.3(1)\,ns and an inhomogeneously broadened linewidth of 5.1(1)\,GHz. The temperature tuning of the emission wavelength to the Cs D1 line allows coupling of the quantum dot to the memory in a joint experiment. The storage of single photons from a quantum dot source in a room-temperature atomic memory is demonstrated with on-demand retrieval. The variable storage time of up to
τs=19.8\,ns and the memory's fractional delay of
Df=14(1) present a significant advancement in the research field. We compare our results with other types of interfaces between single-photon sources and quantum memories and discuss the performance in the context of quantum network applications. This work marks an important step towards local buffering and synchronization of quantum information in heterogeneous quantum network nodes.
Robust interfaces between single-photon sources and quantum memories are pivotal for tomorrow's quantum network architectures. The authors present a room-temperature ladder-type atomic memory for single photons at 895 nm. Comprehensive performance characterization reveals the capabilities of the memory for high bandwidth and low noise, and benchmarking shows its compatibility with state-of-the-art quantum dot single-photon sources. This work paves the way toward a heterogeneous on-demand interface between a single-photon source and an optical memory for buffering and synchronization in quantum network nodes.
Summary form only given. Quantum networks consist of many quantum memory nodes that are interconnected via photonic links, transporting single photons carrying quantum information. In the future, such quantum networks may enable: high-speed quantum cryptography for unconditionally secure communication; large-scale quantum computers; and quantum simulators that will allow for exponential speed-up in solving specific complex problems. A promising route towards functional quantum network nodes is the heterogeneous approach [1], where different and separately optimized physical systems are used for single photon generation and storage. For example semiconductor quantum dots may be used as efficient, fast and deterministic single photon sources, while atomic ensembles allow for efficient storage of these photons.We demonstrate a photonic memory in warm Rb vapour with on-demand storage and retrieval, based on electromagnetic induced transparency (EIT). The memory is suitable for storing single photons emitted by a GaAs droplet quantum dots [2] embedded into a state-of-the-art photonic structures [3]. With our experiments we close the gap between low speed quantum memories with acceptance bandwidth well below 100 MHz and ultra-high speed memories with acceptance bandwidth above 1 GHz. We find that in this intermediate regime vapour cell memories offer an excellent compromise between storage efficiency, storage time and experimental complexity.
Quantum memories can substantially increase the efficiency of long-distance communications by synchronizing entanglement swapping operations in quantum repeater nodes. To build a quantum memory, electromagnetically induced transparency (EIT) in atomic vapors can be exploited to coherently store light pulses even at room temperatures. As a quantum source of light, semiconductor quantum dots (QD) offer bright on-demand single photons with high purity.4 Interfacing QDs with atomic vapors has been shown by “slow light” but a quantum memory for QDs is yet to be demonstrated. In this work, we develop an EIT quantum memory hosted in warm cesium vapor. Storage of faint coherent light pulses on the single photon level shows high storage efficiency. A measured bandwidth in the order of 200 MHz makes the memory compatible with the Fourier-limited emission of QDs embedded in micropillar cavities. We show the first attempts to interface the emission from a QD-micropillar with our quantum memory by finetuning the emission wavelength of the emitters to one of the hyperfine transitions in Cs, where the EIT memory takes place. This work sets the base for a hybrid quantum memory based on atomic ensembles for an on-demand semiconductor single-photon source.