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Quantum 2.0 Conference and Exhibition

Ultra-High Strained Silicon Vacancy Centers in Nanodiamonds

Andreas Tangemann, Marco Klotz, Alexander Kubanek

Published Jan 1, 2025• 0 citations
Publisher

Abstract

Silicon-Vacancy Centers (SiV) in diamond promise optical access to spin qubits within a scalable solid state host. We investigate properties of ultra-high strained SiVs in nanodia-monds at liquid Helium tepmeratures.
DOI
10.1364/quantum.2025.qw3a.23

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Solid-state spin defects, such as color centers in diamond, are among the most promising candidates for scalable and integrated quantum technologies. In particular, the good optical properties of silicon-vacancy centers in diamond combined with naturally occurring and exceptionally coherent nuclear spins serve as a building block for quantum networking applications. Here, we show that leveraging an ultra-high strained silicon-vacancy center inside a nanodiamond allows us to coherently and efficiently control its electron spin, while mitigating phonon-induced dephasing at liquid helium temperature. Moreover, we indirectly control and characterize a 13C nuclear spin and establish a quantum register. We overcome limited nuclear spin initialization by implementing single-shot nuclear spin readout. Lastly, we demonstrate coherent optical control with GHz rates, thus connecting the register to the optical domain. Our work paves the way for future integration of quantum network registers into conventional, well-established photonics and hybrid quantum communication systems.
Abstract Solid-state spin defects, such as color centers in diamond, are among the most promising candidates for scalable and integrated quantum technologies. In particular, the good optical properties of silicon-vacancy centers in diamond, combined with naturally occurring and exceptionally coherent nuclear spins, serve as a building block for quantum networking applications. Here, we show that leveraging an ultra-high-strained silicon-vacancy center inside a nanodiamond allows us to coherently and efficiently control its electron spin, while mitigating phonon-induced dephasing at liquid helium temperature. Moreover, we indirectly control and characterize a 13C nuclear spin and establish a quantum register. We overcome limited nuclear spin initialization by implementing single-shot nuclear spin readout. Lastly, we demonstrate coherent optical control with GHz rates, thus opening a potential connection of the register to the optical domain. Our work paves the way for future integration of quantum network registers into conventional, well-established photonics and hybrid quantum communication systems.
Silicon vacancy (SiV) centers in nanodiamonds have received significant attention because of their superior optical properties. Consequently, they are suitable for integration in nanophotonic devices to perform quantum information processing. Despite their excellent characteristics, their practical application is limited because to exhibit a lifetime-limited line width from SiV centers in nanodiamonds, the samples need to be cooled down to 2 K. Herein, we observed the lifetime-limited line width of the SiV centers in high-strain nanodiamonds at 7.1 K. Moreover, the analysis of the PLE line width variation with temperature suggested that the homogeneous line width reached a lifetime-limited line width even at 9.0 K. The results indicate that such SiV centers can act as indistinguishable single photon sources operating at easily accessible temperatures. This is crucial in quantum photonic technologies based on SiV centers in nanodiamonds.
The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications[1]. Protected by inversion symmetry, the SiV possesses bright narrow-band and spectrally stable optical transition. However, when embedded in bulk diamond, this emitter suffers from relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection, but impeded by optical dephasing owing to their degraded surface quality.