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Nature Communications

All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories

Yongzhou Xue, Xiaojuan Ni, Michael Titze, Shei Sia Su, Bo‐Han Wu, Liang Zhang, Chaohan Cui, Saikat Guha, Matt Eichenfield, Linran Fan

Published Jul 8, 2025• 4 citations
Publisher

Abstract

Strain engineering is vital for tuning the optical and spin properties of solid-state color centers, enhancing spin coherence and compensating emission wavelength shift. Here, we develop an all-optical approach to directly modify the local strain of color centers at the nanoscale by migrating the nearby defect. High-power pulsed optical irradiation triggers defect migration, which subsequently leads to the redistribution of the local crystal lattice of the host material. This redistribution alters the strain experienced by nearby color centers. Using silicon-vacancy centers in diamond, we validate this method and demonstrate a ground state splitting enhancement of up to 1.8 THz. Unlike conventional methods, our approach requires no external fields or nanostructure modifications, enabling non-volatile strain control and optical memory functionality across wide temperature ranges. Its local, permanent nature offers a scalable path for enhancing spin coherence in large-scale quantum systems and has potential applications in photonic machine learning. Strain engineering can be used to control spin and optical properties of defect centers. Xue et al. report an all-optical method to reconfigure and increase the local strain of color centers in diamond, which, unlike previous approaches, does not require external fields or nanostructure modifications.

DOI
10.1038/s41467-025-61384-y

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Strain engineering is vital for tuning the optical and spin properties of solid-state color centers, enhancing spin coherence and compensating emission wavelength shift. Here, we develop an all-optical approach to directly modify the local strain of color centers at the nanoscale by migrating the nearby defect. High-power pulsed optical irradiation triggers defect migration, which subsequently leads to the redistribution of the local crystal lattice of the host material. This redistribution alters the strain experienced by nearby color centers. Using silicon-vacancy centers in diamond, we validate this method and demonstrate a ground state splitting enhancement of up to 1.8 THz. Unlike conventional methods, our approach requires no external fields or nanostructure modifications, enabling non-volatile strain control and optical memory functionality across wide temperature ranges. Its local, permanent nature offers a scalable path for enhancing spin coherence in large-scale quantum systems and has potential applications in photonic machine learning. Strain engineering can be used to control spin and optical properties of defect centers. Xue et al. report an all-optical method to reconfigure and increase the local strain of color centers in diamond, which, unlike previous approaches, does not require external fields or nanostructure modifications.
Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼4×10−4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.
Abstract Solid-state spin defects, such as color centers in diamond, are among the most promising candidates for scalable and integrated quantum technologies. In particular, the good optical properties of silicon-vacancy centers in diamond, combined with naturally occurring and exceptionally coherent nuclear spins, serve as a building block for quantum networking applications. Here, we show that leveraging an ultra-high-strained silicon-vacancy center inside a nanodiamond allows us to coherently and efficiently control its electron spin, while mitigating phonon-induced dephasing at liquid helium temperature. Moreover, we indirectly control and characterize a 13C nuclear spin and establish a quantum register. We overcome limited nuclear spin initialization by implementing single-shot nuclear spin readout. Lastly, we demonstrate coherent optical control with GHz rates, thus opening a potential connection of the register to the optical domain. Our work paves the way for future integration of quantum network registers into conventional, well-established photonics and hybrid quantum communication systems.
Solid-state spin defects, such as color centers in diamond, are among the most promising candidates for scalable and integrated quantum technologies. In particular, the good optical properties of silicon-vacancy centers in diamond combined with naturally occurring and exceptionally coherent nuclear spins serve as a building block for quantum networking applications. Here, we show that leveraging an ultra-high strained silicon-vacancy center inside a nanodiamond allows us to coherently and efficiently control its electron spin, while mitigating phonon-induced dephasing at liquid helium temperature. Moreover, we indirectly control and characterize a 13C nuclear spin and establish a quantum register. We overcome limited nuclear spin initialization by implementing single-shot nuclear spin readout. Lastly, we demonstrate coherent optical control with GHz rates, thus connecting the register to the optical domain. Our work paves the way for future integration of quantum network registers into conventional, well-established photonics and hybrid quantum communication systems.
Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible material. As these defects are increasingly integrated into practical quantum devices, they inevitably encounter lattice strain. However, while the impact of strain is well documented for other solid-state defects like NV centers in diamond, its specific influence on key VSi spin dynamics such as initialization fidelity and state lifetimes remain largely unexplored. In this work, we address this critical gap by designing fully optical pulse sequences and incorporating the effective spin-3/2 strain Hamiltonian into our analysis. This combined approach allows us to isolate both axial and transverse strain contributions and systematically characterize their effect on the metastable state transition rates. Specifically, we reveal that strain significantly reduces the transition rates from the energetically lowest metastable state to the ground state quartet, leading to decreased photon emission. Supported by first-principles calculations, our findings provide a deeper understanding of VSi spin-strain dynamics, yielding crucial insights for the robust deployment of these centers in realistic, strain-prone environments.
Abstract Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation – in number, position, and coherence – in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen δ -doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report a positioning precision of ~ 4 nm in depth and 46(1) nm laterally in 280 nm-diameter pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average T2Hahn=98 μs{T}_{2}^{Hahn}=98\, \mu {{{\rm{s}}}}T2Hahn​=98μs T 2 H a h n = 98 μ s ) and higher average photoluminescence compared to NV centers randomly positioned in pillars. Our method can improve the performance of various NV-based devices. In the realm of magnetic sensing, we achieve a 3 × improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors.
The ability to control solid-state quantum emitters is fundamental to advancing quantum technologies. The performance of these systems is fundamentally governed by their spin-dependent photodynamics, yet conventional control methods using cavities offer limited access to key non-radiative processes. Here we demonstrate that anisotropic lattice strain serves as a powerful tool for manipulating spin dynamics in solid-state systems. Under high pressure, giant shear strain gradients trigger a complete reversal of the intrinsic spin polarization, redirecting ground-state population from ∣0⟩|0\rangle∣0⟩ to ∣±1⟩|\pm 1\rangle∣±1⟩ manifold. We show that this reprogramming arises from strain-induced mixing of the NV center's excited states and dramatic alteration of intersystem crossing, which we quantify through a combination of opto-magnetic spectroscopy and a theoretical model that disentangles symmetry-preserving and symmetry-breaking strain contributions. Furthermore, the polarization reversal is spatially mapped with a transition region below 120 nm, illustrating sub-diffraction-limit control. Our work establishes strain engineering as a powerful tool for tailoring quantum emitter properties, opening avenues for programmable quantum light sources, high-density spin-based memory, and hybrid quantum photonic devices.