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Study on the effect of low-energy ion implantation on the optical properties of Nd-doped diamond color centers

Zhenyu He, Yuan Zhong, Zhifu Luo, Xiaobao Zhang, Xiaoyu Liu, Bin Liao

Published Jun 26, 2025• 5 citations
Publisher
DOI
10.1016/j.carbon.2025.120578

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Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.
Split-vacancy color centers in diamonds are promising solid-state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low-energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availability of reliable methods for the controlled, large-scale production of localized individual photon emitters. This task is partially achieved by controlled ion implantation to introduce selected impurities in the host material and requires the development of challenging beam focusing or collimation procedures coupled with single-ion detection techniques. We report on the protocol for the direct optical activation of split-vacancy color centers in diamond via localized processing with a continuous-wave laser at mW optical powers. We demonstrate the activation of photoluminescent Mg- and Sn-related centers at both the ensemble and single-photon emitter levels in ion-implanted, high-purity diamond crystals without further thermal processing. The proposed lithographic method enables the activation of individual color centers at specific positions of a large-area sample by means of a relatively inexpensive equipment offering real-time, in situ monitoring of the process.
Abstract Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV − ) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye–Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)‐based SiV − centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV − centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV − centers featuring stable high‐purity single‐photon emission through Si implantation into NDs with an average size of ∼20 nm. We observe room temperature emission, with zero‐phonon line wavelengths in the range of 730–800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group‐IV diamond color centers with applications in quantum photonics, sensing, and biomedicine.