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Quantum Optics and Photon Counting

Single photon detectors based on superconducting nano/microstrips for applications at short-wavelength infrared

L. Parlato, C. Cirillo, Pasquale Ercolano, Ciro Bruscino, Martina Peluso, Mikkel Ejrnaes, Daniela Salvoni, Chengjun Zhang, Francesco Colangelo, Francesco Avitabile, Z. Makhdoumi Kakhaki, C. Attanasio, Giovanni Piero Pepe

Published Jun 6, 2025• 0 citations
Publisher
DOI
10.1117/12.3058448

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Detection of single infrared photons in superconducting microstrips of 4 nm thick disordered Nb0.15Re0.85 has been investigated. Microstrips with a critical temperature of 5.15 K and widths from 1.0 to 2.5 μm have been fabricated by optical lithography. We demonstrate single photon detection sensitivity at 1.5 μm wavelength at a temperature of 1.79 K. By investigating the detection process at this temperature, we find that the current bias threshold is at 21% of the depairing current. This threshold is similar to what should be observed in typical amorphous superconductors, which confirms that ultrathin disordered Nb0.15Re0.85 is an interesting material for superconducting microstrip single photon detectors that operate above 1 K.
The sensitive element of superconducting single-photon detectors made in the form of a microstrip promise to resolve significant limitations caused by their typical design. However, attention should be paid to the problem of deterioration of the detection efficiency of devices with an increase of the width of the superconducting strip from nano- to microscale. This article demonstrates a possibility of achieving highly saturated detection efficiency of superconducting microstrip single-photon detectors by using high-resistivity niobium nitride films. The approach opens the way for employing fundamentally improved experimental devices.
The effective and convenient detection of single photons via advanced detectors with a large active area is becoming significant for quantum and classical applications. This work demonstrates the fabrication of a superconducting microstrip single-photon detector (SMSPD) with a millimeter-scale active area via the use of ultraviolet (UV) photolithography. The performances of NbN SMSPDs with different active areas and strip widths are characterized. SMSPDs fabricated by UV photolithography and electron beam lithography with small active areas are also compared from the aspects of the switching current density and line edge roughness. Furthermore, an SMSPD with an active area of 1 mm × 1 mm is obtained via UV photolithography, and during operation at 0.85 K, it exhibits near-saturated internal detection efficiency at wavelengths up to 800 nm. At a wavelength of 1550 nm, the detector exhibits a system detection efficiency of ∼5% (7%) and a timing jitter of 102 (144) ps, when illuminated with a light spot of ∼18 (600) µm in diameter, respectively.