Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (<0.01% 29Si) using optical detection. We investigate two sites and find 0.1 GHz optical inhomogeneous linewidths and homogeneous linewidths below 70 kHz for both sites. We measure the electron spin coherence time of both sites using optically detected magnetic resonance and observe Hahn echo decay constants of 0.8 ms and 1.2 ms at around 11 mT. These optical and spin properties of Er3+:Si are an important milestone towards using optically accessible spins in silicon for a broad range of quantum information processing applications.
Robust spin-photon interfaces with optical transitions in the telecommunication band are essential for quantum networking technologies. Erbium (Er) ions are the ideal candidate with environmentally protected transitions in telecom-C band. Finding the right technologically compatible host material to enable long-lived spins remains a major hurdle. We introduce a new platform based on Er ions in cerium dioxide (CeO 2 ) as a nearly-zero nuclear spin environment (0.04%) epitaxially grown on silicon, offering silicon compatibility for opto-electrical devices. Our studies focus on Er 3+ ions and show a narrow homogeneous linewidth of 440 kHz with an optical coherence time of 0.72 μs at 3.6 K. The reduced nuclear spin noise enables a slow spin-lattice relaxation with a spin relaxation time up to 2.5 ms and an electron spin coherence time of 0.66 μs (in the isolated ion limit) at 3.6 K. These findings highlight the potential of Er 3+ :CeO 2 platform for quantum networks applications.
Rare-earth-ion-doped crystals has emerged as a promising platform for quantum technologies, owing to their narrow telecom-band optical emission, long spin memory, and compatibility with silicon integrated photonic architectures. However, the realization of scalable quantum devices requires host materials with intrinsically dilute spin environments to suppress decoherence. In this context, erbium (Er
3+) doped cerium oxide (CeO
2) is an attractive candidate due to the ultra-low concentration of nuclear spins in the host matrix and its compatibility with silicon-based technologies. Here we perform a comprehensive investigation of the coherence properties of Er
3+ electron spin qubit in CeO
2 via semiclassical as well as detailed cluster correlation expansion simulations. By systematically exploring magnetic field strength, pulse sequences, erbium concentration, and spin temperature, we identify regimes where decoherence from the spin bath is strongly suppressed. Our investigations illustrate that at dilute doping concentration (of the order of 10 ppb) and sub-Kelvin temperatures, operation near clock transitions enables Hahn-echo coherence times to approach the second timescale even at natural isotopic abundance. Importantly, from a practical standpoint, coherence times on the order of
∼10 ms are expected even at liquid helium temperature (about 2 K) for similar concentrations. Moreover, we demonstrate that an additional enhancement can be obtained with conventional multi-
π-pulse dynamical decoupling protocols. Thus, our findings establish Er
3+ doped CeO
2 as a front-runner for realizing spin qubits, quantum memories, and integrated quantum networks.
This thesis investigates the potential of Er:YSO and Er:Si for quantum communication and computation applications. Erbium uniquely possess optical transitions in the 1.5 um region, making it suitable for both fibre telecommunication and silicon photonics. The properties of the
I15/2↔I13/2 optical transition in Er:YSO have already been extensively studied. Over two decades ago, improvements in
Er3+ dephasing time at 1.5 um were achieved by applying a 5T field along the D1 axis. More recently, a record 4.4 ms coherence time on the same optical transition was achieved using a 7T field. These investigations, among others, illustrate that large Er electron spins become thermally polarised with sufficient magnetic field. However, no long lived and coherent spin transitions associated with the Er ions had previously been identified, and such transitions are necessary for on-demand quantum state storage. To address this requirement, the optical and hyperfine transition properties of 167-Er:YSO were investigated in large magnetic fields. In a field of 7T, spectral hole lifetimes of 1 minute and hyperfine population lifetimes of 12 minutes were observed. These measurements illustrate the effect of spin-lattice relaxation in this system, and how it can be mitigated. Efficient spin-polarisation of the entire 167-Er hyperfine ensemble is also demonstrated. This is the first such demonstration in rare earth systems, and a key requirement for broadband optical storage. Moreover, a 1.3 second coherence time was recorded for an 167-Er:YSO hyperfine transition at 7T and 1.4 K. This is an improvement of several orders-of-magnitude over previous coherence measurements on spin-transitions in Er doped solids. This is also sufficient for maximal entanglement rates in quantum repeater networks that span distances of 1000 km or greater. With an optical transition at 1.5 um, Er is also an ideal candidate to connect silicon based quantum computers to the future quantum Internet. In particular, single Er:Si ions could be used to develop an optical-spin bus between P:Si qubits and fibre based quantum networks. Presented here is the first spectroscopic investigation of single Er:Si ions. This required a novel opto-electronic approach to single ion detection, where the Er ions are implanted into a nanometre scale fin-shaped Field Effect Transistor. With this approach it was possible to develop high resolution optical spectra, where both the electronic and hyperfine levels of individual Er ions were resolved. Long optical and spin coherence times are also important requirements for an optical-spin bus. To address the first requirement, an investigation of the optical lineshape was undertaken. Here it was determined that sources of Stark noise external to the transistor channel contribute a significant amount to optical homogeneous linewidth. However, the dominant noise contribution was determined to be short-range (from within the 30 nm wide channel) and the total homogeneous linewidth was measured to be 50 MHz. The site structure of an individual Er:Si ion was then analysed, using magnetic field rotation patterns and optical transitions between multiple crystal field levels. This site was determined to have approximately axial (
C3) symmetry. The purpose of this study was to determine a magnetic field regime in which the Er electrons spin can be polarised, which is necessary for realising of long hyperfine lifetimes and coherence times.
Rare-earth ions in solid-state hosts exhibit low homogeneous broadening and long spin coherence at cryogenic temperatures thus making them a promising candidate for optical quantum memories [1], optical-microwave transducers [2] and single dopant-based devices such as single photon emitters operating at the telecommunication wavelengths [3]. Here, we present an overview of the spin and optical properties of Er ensembles in Si accessed via resonant photoluminescence excitation (PLE) spectroscopy [4]. Samples were positioned directly on top of tailor-fabricated superconducting single photon detectors, placed in a dilution refrigerator unit and resonantly excited using fiber optics. Our method provided high collection efficiency and allowed spectral measurements of low Er density samples. The observed Er PLE spectra were strongly affected by the presence of co-dopants such as O, B or P reflecting their influence on the formation of optically active Er sites and corresponding Er optical transition energies. Higher O densities resulted in especially rich PLE spectra suggesting that a variety of Er-O complexes formed due to O doping. Lowering the O concentration, we achieved PLE spectra dominated by a single Er site in P doped samples. Interestingly, the Er spin relaxation and optical coherence properties were barely affected by the employed co-dopants and mainly depended on the Er concentration. By lowering the Er concentration from relatively high (1018cm-3) to low densities (1016cm-3), we were able to increase Er spin lifetimes from ~0.1 s to ~30 s. Long spin relaxation times allowed us to identify PLE spectra of new Er sites in Si. In both concentration regimes, we observed sub-MHz transient spectral holes suggesting long optical coherence times. Furthermore, we observed sub-MHz spin transitions in both natural and isotopically purified Si and achieved spin coherence times above 1 ms in isotopically purified Si. Narrow optical linewidths and long transverse and longitudinal spin relaxation times show that Er in Si is an excellent candidate for future quantum information and communication applications.