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Optical and Quantum Sensing and Precision Metrology II

Wafer-scale fabrication of alkali vapor cells

Yang Li, Marlou R. Slot, Dongyu Sohn, Susan A. Schima, Matthew T. Hummon, John E. Kitching

Published Mar 19, 2025• 0 citations
Publisher

Abstract

This paper describes the progress made in developing wafer-scale fabrication process of alkali vapor cells for chip-scale atomic devices such as Coherent Population Trapping (CPT) clocks, optical frequency standards and Rydberg-atom-based sensors. The wafer level fabrication process uses anodic bonding and introduces alkali atoms by chemical reactions of Alkali Chloride with Barium Azide. This method is compatible to make cells with a wide range of buffer gas species and pressures, including evacuated cells. We improve the yield of the cells to above 50%. We will show the residual gas pressures for evacuated cells are mostly consistent with zero within the resolution of the saturation absorption spectroscopy measurement. The temperature coefficients for the CPT spectroscopy are improved with Ar-N2 mixture buffer gas compared with only N2 buffer gas.

DOI
10.1117/12.3039945

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Herein, a microfabricated millimeter-level vapor alkali cell with a high hermeticity is fabricated through a wet etching and single-chip anodic bonding process. The vapor cell, containing Rb and N2, was investigated in a coherent population trapping (CPT) setup for the application of a chip-scale atomic clock (CSAC). The contrast of CPT resonance is up to 1.1% within the only 1 mm length of light interacting with atom. The effects of some critical external parameters on the CPT resonance, such as laser intensity, cell temperature, and buffer gas pressure, are thoroughly studied and optimized. The improved microfabricated vapor cell also exhibited great potential for other chip-scale atomic devices.
We describe a process for fabricating a wafer-scale array of alkali metal vapor cells with low residual gas pressure. We show that by etching long, thin channels between the cells on the Si wafer surface, the residual gas pressure in the evacuated vapor cell can be reduced to below 0.5 kPa (4 Torr) with a yield above 50%. The low residual gas pressure in these mass-producible alkali vapor cells can enable a new generation of low-cost chip-scale atomic devices such as vapor cell optical clocks, wavelength references, and Rydberg sensors.
We describe the fabrication of chip-sized alkali atom vapor cells using silicon micromachining and anodic bonding technology. Such cells may find use in highly miniaturized atomic frequency references or magnetometers. The cells consist of cavities etched in silicon, with internal volumes as small as 1 mm3. Two techniques for introducing cesium and a buffer gas into the cells are described: one based on chemical reaction between cesium chloride and barium azide, and the other based on direct injection of elemental cesium within a controlled anaerobic environment. Cesium optical absorption and coherent population trapping resonances were measured in the cells.
We demonstrate wafer-scale fabrication of temperature-compensated alkali vapor cells using a mixture of Ar and N2 buffer gases. The temperature coefficient of the fractional frequency shift of the hyperfine clock resonance is reduced from a typical value of ≈30×10−9/ K for cells containing pure N2 to below ≈3×10−9/ K for the buffer gas mixture. This result is an important step toward the mass production of temperature-compensated atomic vapor cell-based devices such as chip-scale atomic clocks.
We describe the fabrication of Rubidium (Rb) vapor cells using glass-silicon anodic bonding techniques and chemical reaction between rubidium chloride and barium azide. The pure metallic Rb drops and buffer gases were obtained in the cells with few mm3internal volumes. The optical absorption resonance of85Rb D1 transition with proper broadening and the corresponding coherent population trapping (CPT) resonance, with a signal contrast of 1.5% and linewidth of about 1.7 KHz, have been detected at 90degC.