Scalable quantum photonic devices drive the development of compact sources of entangled photons, which are pivotal for quantum communication, computing, and cryptography. In this work, we present entangled photon pair generation in rhombohedral boron nitride (r-BN), leveraging its unique optical and structural properties. Unlike conventional hexagonal boron nitride, which suffers from reduced nonlinear response due to centrosymmetric structure in even-layered stacks, r-BN features interlayer ABC stacking and maintains robust in-plane inversion symmetry. These characteristics lead to highly efficient entangled photon generation. Our system demonstrates an entangled photon pair generation rate up to 8667 Hz/(mW·mm) and offers a tunable platform for Bell state generation by simply adjusting the pump polarization, without compromising the entanglement quality or generation efficiency. The polarization entangled state is measured with a fidelity up to 94%. This advancement not only marks a significant step towards ultrathin, scalable quantum devices but also establishes r-BN as a promising candidate for on-chip integrated quantum optical applications. Compact sources of entangled photons are desired for quantum communication, computing, and cryptography. Here, the authors report high entangled photon pair generation rates in rhombohedral boron nitride, showing its potential as a tunable platform for Bell state generation.
Scalable quantum photonic devices drive the development of compact sources of entangled photons, which are pivotal for quantum communication, computing, and cryptography. In this work, we present entangled photon pair generation in rhombohedral boron nitride (r-BN), leveraging its unique optical and structural properties. Unlike conventional hexagonal boron nitride, which suffers from reduced nonlinear response due to centrosymmetric structure in even-layered stacks, r-BN features interlayer ABC stacking and maintains robust in-plane inversion symmetry. These characteristics lead to highly efficient entangled photon generation. Our system demonstrates an entangled photon pair generation rate up to 8667 Hz/(mW·mm) and offers a tunable platform for Bell state generation by simply adjusting the pump polarization, without compromising the entanglement quality or generation efficiency. The polarization entangled state is measured with a fidelity up to 94%. This advancement not only marks a significant step towards ultrathin, scalable quantum devices but also establishes r-BN as a promising candidate for on-chip integrated quantum optical applications. Compact sources of entangled photons are desired for quantum communication, computing, and cryptography. Here, the authors report high entangled photon pair generation rates in rhombohedral boron nitride, showing its potential as a tunable platform for Bell state generation.
Entangled photon-pair sources are pivotal in various quantum applications. Miniaturizing the quantum devices to meet the requirement in limited space applications drives the search for ultracompact entangled photon-pair sources. The rise of two-dimensional (2D) semiconductors has been demonstrated as ultracompact entangled photon-pair sources. However, the photon-pair generation rate and purity are relatively low, and the strong photoluminescence in 2D semiconductors also makes the operational wavelength range limited. Here, we use the spontaneous parametric down conversion (SPDC) of rhombohedral boron nitride (rBN) as a polarization entangled photon-pair source. We have achieved a generation rate of more than 120 hertz (a record-high SPDC coincidence rate with 2D materials) and a high-purity photon-pair generation with a coincidence-to-accidental ratio of above 200. Tunable Bell state generation is also demonstrated by simply rotating the pump polarization, with a fidelity up to 0.93. Our results suggest rBN as an ideal candidate for on-chip integrated quantum devices.
Abstract Ultracompact entangled photon sources are pivotal to miniaturized quantum photonic devices. Van der Waals (vdW) nonlinear crystals promise efficient photon-pair generation and on-chip monolithic integration with nanophotonic circuitry. However, it remains challenging to generate maximally entangled Bell states of photon pairs with high purity, generation rate, and fidelity required for practical applications. Here, we realize a polarization-entangled photon-pair source based on spontaneous parametric down conversion in an ultrathin rhombohedral tungsten disulfide (3R-WS 2 ) crystal. This vdW entangled photonic source exhibits a high photon-pair purity with a coincidence-to-accidental ratio of above 800, a generation rate of 31 Hz, and two maximally polarization-entangled Bell states with fidelities exceeding 0.93 and entanglement degree over 0.97. These results stem from scalable optical nonlinearity, enhanced second-order susceptibility by electronic transitions, and a well-defined symmetry-enabled selection rule inherent in 3R-WS 2 . Our polarization entangled photon source can be integrated with photonic structures for generating more complex entangled states, thus paving an avenue for advanced quantum photonic systems toward computation and metrology.
Quantum photonics has rapidly advanced as a key area for developing quantum technologies by harnessing photons’ inherent quantum characteristics, particularly entanglement. Generation of entangled photon pairs, known as Bell states, is crucial for quantum communications, precision sensing, and quantum computing. While bulk quantum optical setups have provided foundational progress, integrated quantum photonic platforms now offer superior scalability, efficiency, and integrative potential. In this study, we demonstrate a compact and bright source of polarization-entangled Bell state utilizing continuous-wave pumping on thin film lithium niobate (TFLN) integrated photonics. Our periodically poled lithium niobate device achieves on-chip brightness of photon pair generation rate of 518.2 MHz/mW, comparable to representative integrated photon-pair sources reported across various integrated photonic platforms. This demonstration marks the first realization, to our knowledge, of polarization entanglement on TFLN platforms. Experimentally measured metrics confirm high-quality entangled photon pairs with a purity of 0.901, a concurrence of 0.9, and a fidelity of 0.941. We expect our compact quantum devices to have great potential for advancing quantum communication systems and photonic quantum technologies.
CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.
Electrically Reconfigurable NbOCl2 Metasurface for Quantum Technologies
Entangled photon-pair sources are foundational to advancing quantum technologies, including secure communication, quantum sensing, and imaging. For deployment in space-constrained environments such as satellite-based quantum networks or portable devices, compact, reconfigurable, and efficient entanglement sources are essential. Here, we present an electrically tunable entangled photon-pair source utilizing a nanostructured NbOCl2 crystal, engineered for operation in the telecommunication C-band. The inherent non-centrosymmetric lattice symmetry of NbOCl2 enables direct generation of polarization-entangled Bell states without the need for post-selection, leveraging its exceptional second-order nonlinear susceptibility, which surpasses conventional nonlinear materials. By nanopatterning NbOCl2 into a high-quality-factor metasurface, we achieve three orders of magnitude enhancement in photon-pair generation efficiency via resonant excitation of bound states in the continuum resonance, which intensify light-matter interactions. Furthermore, we demonstrate in situ electrical tunability of the photon-pair emission wavelength over a 250 nm range from 1450 nm to 1700 nm by dynamically modulating surrounding liquid crystal layer. Remarkably, the decoupling of photon-pair generation rate and spectral tunability ensures high brightness, above 10,000 coincidences, under active tuning. The air stability and mechanical robustness of NbOCl2 further enhance its practicality for real-world deployment. This work establishes NbOCl2 as a superior material for scalable, on-chip quantum light sources, paving the way for integrated quantum communication systems, adaptive sensors, and portable quantum devices.
Nanoscale quantum light sources are essential building blocks for integrated quantum photonic systems. Here, we report a wavelength-scale entangled-photon source based on van der Waals-engineered NbOBr2, and benchmark its performance for telecom-wavelength quantum light generation. By exploiting the material's second-order nonlinearity, we generate quantum-correlated photon pairs via spontaneous parametric down-conversion. We then use a 90∘ twisted stacking to induce quantum interference in photon-pair generation, yielding polarization-entangled photons. This approach enables tunability of the quantum optical state via control of the excitation laser polarization. We experimentally obtain entanglement fidelities exceeding 95% for Bell states, along with a high coincidence-to-accidental ratio of $\sim$335, and a brightness approximately one order of magnitude higher than recently reported telecom sources based on transition metal dichalcogenide (TMD) 2D materials. These results establish twisted van der Waals engineering as a powerful platform for highly tunable, high-brightness quantum light sources at telecom wavelengths.