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Quantum Communications and Quantum Imaging

Towards a thin-film lithium niobate nanophotonic cavity-enhanced telecom-compatible quantum memory

Priyash Barya, Ashwith Varadaraj Prabhu, Oğulcan E. Örsel, Edmond K. C. Chow, Elizabeth A. Goldschmidt

Published Oct 4, 2024• 0 citations
Publisher

Abstract

We propose using thin-film lithium niobate on insulator (LNOI) doped with Erbium (Er3+) as a promising solution for implementing large-scale quantum memory. However, the transition from bulk crystals to thin films poses challenges, notably reduced optical depth, which is critical for broad atomic frequency comb memory. To address this, we plan to utilize impedance-matched cavities, increasing the effective optical depth. Furthermore, the cavity would boost the rate of spontaneous emission, increasing the efficiency of spectral hole burning. Our preliminary results reveal high-Q micro-ring resonators (Q≈190k) on Er3+: LNOI, demonstrating a nearly 3.5-fold reduction in the optical lifetime due to cavity resonance.

DOI
10.1117/12.3027357

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Optics Express•Apr 26, 2021•10 citations
We propose using thin-film lithium niobate on insulator (LNOI) doped with Erbium (Er3+) as a promising solution for implementing large-scale quantum memory. However, the transition from bulk crystals to thin films poses challenges, notably reduced optical depth, which is critical for broad atomic frequency comb memory. To address this, we plan to utilize impedance-matched cavities, increasing the effective optical depth. Furthermore, the cavity would boost the rate of spontaneous emission, increasing the efficiency of spectral hole burning. Our preliminary results reveal high-Q micro-ring resonators (Q≈190k) on Er3+: LNOI, demonstrating a nearly 3.5-fold reduction in the optical lifetime due to cavity resonance.
Spectrally multiplexed telecom quantum networks require quantum memories combining efficient storage with programmable frequency addressing. An integrated implementation should therefore unite a native telecom transition, efficient storage, and fast on-chip spectral control. Here we demonstrate a cavity-enhanced memory in an isotopically purified 167Er3+^{167}\mathrm{Er}^{3+}167Er3+-doped thin-film lithium niobate microring. Long-lived hyperfine shelving states enable persistent, high-contrast atomic frequency comb preparation with a single-component lifetime of 277.6(52.6)277.6(52.6)277.6(52.6)~s, while cavity impedance matching yields 23.3(5)%23.3(5)\%23.3(5)% on-chip efficiency for 100-ns storage. The intrinsic electro-optic response enables frequency-selective storage and routing at rates up to 20~MHz. We further store and retrieve time-energy-entangled telecom photons, violating an entanglement-witness bound by more than 11 standard deviations. Our results establish erbium-doped thin-film lithium niobate as a programmable light--matter interface for spectrally multiplexed quantum networks.
As an active material with favorable linear and nonlinear optical properties, thin-film lithium niobate has demonstrated its potential in integrated photonics. Integration with rare-earth ions, which are promising candidates for quantum memories and transducers, will enrich the system with new applications in quantum information processing. Here, we investigate the optical properties at 1.5 μm wavelengths of rare-earth ions (Er3+) implanted in thin-film lithium niobate waveguides and micro-ring resonators. Optical quality factors near a million after post-annealing show that ion implantation damage can be repaired. The transition linewidth and fluorescence lifetime of erbium ions are characterized. The ion-cavity coupling is observed through a Purcell enhanced fluorescence from which a Purcell factor of 3.8 ± 0.5, compared with waveguide lifetime, is extracted. This platform is compatible with top-down lithography processes and leads to a scalable path for controlling spin-photon interfaces in photonic circuits.
Nanophotonic quantum memory is a vital component for scalable quantum information processing for quantum computing, networking, and sensing applications. We store single-photon-level telecom-band optical pulses for more than a microsecond using an atomic frequency comb in erbium-doped thin-film lithium niobate, well beyond what is practically feasible via propagation in even the best nanophotonic devices due to propagation losses. We verify the quantum nature of this storage by demonstrating the phase coherence and sub-single-photon noise upon retrieval. We also show the flexibility of our platform by storing up to 20 temporal modes and demonstrating an acceptance bandwidth up to 2.2 GHz. These results establish erbium-doped thin-film lithium niobate as a practical platform for on-chip quantum memory at telecom wavelengths, a key missing element for photonic quantum computing and quantum networking.
Quantum memories are a key building block for optical quantum computers and quantum networks. Rare-earth ion-doped crystals are a promising material to achieve quantum memory using an atomic frequency comb protocol. However, current atomic frequency comb memories typically use bulk materials or waveguides with large cross sections or rely on fabrication techniques not easily adaptable to wafer scale processing. Here, we demonstrate a compact chip-integrated atomic frequency comb in rare-earth-doped thin-film lithium niobate. Our optical memory exhibits a broad storage bandwidth exceeding 100 MHz and optical storage time as long as 250 ns. The enhanced optical confinement in this device leads to three orders of magnitude reduction in optical power required for a coherent control as compared to ion-diffused waveguides. These compact atomic frequency comb memories pave the way toward scalable, highly efficient, electro-optically tunable quantum photonic systems that can store and manipulate light on a compact chip.
Rare earth ions are known as promising candidates for building quantum light-matter interface. However, tunable photonic cavity access to rare earth ions in their desired host crystal remains challenging. Here, we demonstrate the integration of erbium doped yttrium orthosilicate (Er3+:Y2SiO5) with thin-film lithium niobate photonic circuit by plasma-activated direct flip chip bonding. Resonant coupling to erbium ions is realized by on-chip electro-optically tuned high Q lithium niobate micro-ring resonators. Fluorescence and absorption of erbium ions at 1536.48 nm are measured in the waveguides, while the collective ion-cavity cooperativity with micro-ring resonators is assessed to be 0.36. This work presents a versatile scheme for future rare earth ion integrated quantum devices.