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Journal of the Korean Physical Society

Resistivity characteristics near the metal–insulator transition in the half-filled Anderson–Hubbard model

Thi-Hai-Yen Nguyen, Anh-Tuan Hoang, Duc‐Anh Le

Published Oct 3, 2024• 2 citations
Publisher
DOI
10.1007/s40042-024-01186-5

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We employ a recently developed computational many-body technique to study for the first time the half-filled Anderson-Hubbard model at finite temperature and arbitrary correlation U and disorder V strengths. Interestingly, the narrow zero temperature metallic range induced by disorder from the Mott insulator expands with increasing temperature in a manner resembling a quantum critical point. Our study of the resistivity temperature scaling T^{α} for this metal reveals non-Fermi liquid characteristics. Moreover, a continuous dependence of α on U and V from linear to nearly quadratic is observed. We argue that these exotic results arise from a systematic change with U and V of the "effective" disorder, a combination of quenched disorder and intrinsic localized spins.
We study the half-filled Hubbard model with random on-site energies with the use of a real-space renormalization group. For d=1d=1d=1, we find a transition from an Anderson insulator to a Hubbard insulator as the Hubbard UUU is increased. We find no metallic phase. For d=3d=3d=3, we find a metallic phase which, surprisingly, is stabilized against Anderson localization by a small Hubbard UUU.
We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction UUU reaches a critical value UcU_cUc​. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.