Progress on ion trap quantum computation and simulation using two-dimensional ion crystals

Chenxu Wang, Ran He, Rui-Rui Li +6 more

Ion trap system is one of the main quantum systems to realize quantum computation and simulation. Various ion trap research groups worldwide jointly drive the continuous enrichment of ion trap structures, and develop a series of high-performance three-dimensional ion trap, two-dimensional ion trap chip, and ion traps with integrated components. The structure of ion trap is gradually developing towards miniaturization, high-optical-access and integration, and is demonstrating its outstanding ability in quantum control. Ion traps are able to trap increasingly more ions and precisely manipulate the quantum state of the system. In this review, we will summarize the evolution history of the ion trap structures in the past few decades, as well as the latest advances of trapped-ion-based quantum computation and simulation. Here we present a selection of representative examples of trap structures. We will summarize the progresses in the processing technology, robustness and versatility of ion traps, and make prospects for the realization of scalable quantum computation and simulation based on ion trap system.

Tongyan Lin, Kenneth R. Brown, Xie Chen +3 more

Megan Ivory, A. Kato, A. Hasanzadeh +1 more

We have developed a trapped ion system for producing two-dimensional (2D) ion crystals for applications in scalable quantum computing, quantum simulations, and 2D crystal phase transition and defect studies. The trap is a modification of a Paul trap with its ring electrode flattened and split into eight identical sectors and its two endcap electrodes shaped as truncated hollow cones for laser and imaging optics access. All ten trap electrodes can be independently DC-biased to create various aspect ratio trap geometries. We trap and Doppler cool 2D crystals of up to 30 Ba+ ions and demonstrate the tunability of the trapping potential both in the plane of the crystal and in the transverse direction.

Mark S. Gulley, Richard Hughes, J.J. Gómez +11 more

Hong-Shuo Zhang, Yongzhuang Zhou, Yong Shen +1 more

Coulomb crystals have applications in many areas such as quantum computing and simulation, quantum logic spectroscopy, nonlinear dynamics and chaos, phase transitions, and chemical reaction process. The structure of the Coulomb crystal and the trajectory of each trapped ion are typically determined by the parameters of the trap and the ion species. However, dark ions are often inevitable in experiment, which introduces uncertainty into the desired crystal structures and ion trajectories. Few researches have been conducted to investigate the configuration change of the crystal in the presence of dark ions and the influence of a dark ion on its surrounding ion trajectories in a multi-ion system. In this work, we utilize the molecular dynamics simulation software LAMMPS and the (py)LIon package (modified to adapt the semi-classical theory of laser cooling) for simulating the three-dimensional ion trajectories of Coulomb crystals. The formation process of 40Ca+ Coulomb crystal in a linear trap is simulated. With the micromotion and secular motion trajectories of each ion, we calculate the temperature of Coulomb crystal and the average velocity of specific ions. It is observed that the crystal structure exhibits obvious layering phenomenon when the trapped ions yield a large difference in their charge-to-mass ratio (CMR), however, layering is not obvious with a small difference in the CMR. In addition, we simulate and compare the Coulomb crystal structure formed by pure 40Ca+ ions with that formed by 40Ca+ ions mixed with a small number of dark ions including isotopic ions (44Ca+) and impurity ions (CaH+). Three different cases are investigated, namely the one-dimensional ion string, two-dimensional planar structure and three-dimensional helical structure. The results show that the ions in the neighborhood of a dark ion exhibit around micron-order position change compared with their positions before the dark ion is formed. Such a change can be measured in experiment through microscopic imaging, thereby providing a way to identify the formation of dark ions in Column crystals with a large ion number.

Dana J. Berkeland