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Measuring Well-Width Dependent Disorder in Semiconductor Quantum Wells with Two-Dimensional Coherent Spectroscopy

Perez, Cesar

Published Jan 1, 2024• 1 citation
Publisher

Abstract

This thesis delves into the intricate realm of exciton physics within GaAs/Al0.3Ga0.7As quantum wells using Two-Dimensional Coherent Spec- troscopy (2DCS), revealing novel insights into their coherent behaviors and interactions. Conducted in a box geometry with a pulsed laser operating at a repetition rate of 76 MHz and a pulse width of 100 fs within the near- infrared region, our investigation uncovers the distinctive characteristics of localized and delocalized excitons. It elucidates how factors such as disorder, quantum confinement, and external strain influence their coherent response and many-body interactions. Using two quantum well samples, one with a 10 nm well width and the other with a 20 nm well width featuring AlAs cladding layers to compensate for alloy concentration variations, we explore the impact of disorder and well- width variation on excitonic properties. We find that wider quantum wells promote delocalized excitons, affecting excitation-induced dephasing rates and thermal dephasing amplitudes, measured by keeping the sample tem- perature below 70 K. By applying the projection slice theorem, we directly measure time-dependent frequency correlations in the system, enhancing the accuracy of lineshape analysis in 2DCS experiments. Our study deviates from conventional approaches by directly measuring the frequency-frequency correlation function (FFCF), uncovering deviations from the Gauss-Markov approximation in wider quantum wells. We also investi- gate the effects of strain and quantum confinement on exciton dynamics, revealing strain-induced changes in dephasing rates and phonon activation energies. This thesis lays the groundwork for future research, suggesting av- enues for studying biexciton dynamics in wide quantum wells, incorporating strain effects, and advancing theoretical models to better understand exciton- lattice interactions and improve lineshape analysis.

DOI
10.7302/23769

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Light-matter interactions associated with excitons and exciton related complexes are explored in bulk GaAs and semiconductor microcavities using multidimensional coherent spectroscopy (MDCS). This approach provides rich spectra determining quantum excitation pathways, structural influences on the excitons, and coherence times.;Polarization, excitation density, and temperature-dependent MDCS is performed on excitons in strained bulk GaAs layers, probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy of heavy-hole and light-hole valence states, leading to an observed splitting of the associated excitons at low temperature. Increasing the strain increases the magnitude of the heavy-/light- hole exciton peak splitting, induces an asymmetry in the off-diagonal interaction coherences, increases the difference in the heavy- and light- hole exciton homogenous linewidths, and increases the inhomogeneous broadening of both exciton species. All results arise from strain-induced variations in the local electronic environment, which is not uniform along the growth direction of the thin layers. For cross-linear polarized excitation, wherein excitonic signals give way to biexcitonic signals, the high-strain sample shows evidence of bound light-, heavy- and mixed- hole biexcitons.;2DCS maps the anticrossing associated with normal mode splitting in a semiconductor microcavity. For a detuning range near zero, it is observed that there are two diagonal features related to the intra-action of exciton-polariton branches and two off-diagonal features related to coherent interaction between the polaritons. At negative detuning, the line shape properties of the diagonal intra-action features are distinguishable and can be associated with cavity-like and exciton-like modes. A biexcitonic companion feature is observed, shifted from the exciton feature by the biexciton binding energy. Closer to zero detuning, all features are enhanced and the diagonal intra-action features become nearly equal in amplitude and linewidth. At positive detuning the exciton-like and cavity-like characteristics return to the diagonal intra-action features. Off-diagonal interaction features exhibit asymmetry in their amplitudes throughout the detuning range. The amplitudes are strongly modulated as the lower polariton branch crosses the bound biexciton energy determined from negatively detuned spectra.
Excitons, the bound states of an electron and a hole, in semiconductors are interesting objects and they continue to attract attention of researchers from all over the world. Despite intense research on exciton physics over last three-four decades, many interesting phenomena related to the dynamics and the nonlinear optical properties of excitons in semiconductors and their nanostructures in the coherent and incoherent regimes are still to be explored. This thesis presents our effort to study the nonlinear optical properties as well as the exciton dynamics in coherent and incoherent regime in semiconductor nanostructures including GaAs quantum wells (QWs) and InAs quantum dots (QDs). We have set up several time-resolved and steady-state optical spectroscopic measurement techniques in our laboratory to carry out our study on excitons dynamics in semiconductor QWs and QDs. We work out a clear and detailed theory of the pump-probe signal taking account of all aspect of the measurement, namely, the lock-in detection, spectral selection by the monochromator and time-integration at the slow photodetector. We have used the formalism of optical Bloch equations conventionally used to analyse wave mixing experiments. Our analysis puts the pump-probe technique on the same footing as the wave mixing experiments. We show that pumpprobe experiments can be used to study both coherent and incoherent dynamics. We also present a clear physical picture of the measured signal using the Lorentz harmonic oscillator model. We report the investigation of the coherent exciton dephasing dynamics using pumpprobe reflectivity measurement in GaAs QWs for resonant excitation. Two GaAs/AlGaAs QWs with well thicknesses 8 nm and 17.5 nm are used. We found a strong dependence of the dephasing rate of the excitons with increasing exciton density due to exciton-exciton scattering. We found that the exciton dephasing rate of 8 nm QWs at low excitation density and at low lattice temperature is larger than the corresponding dephasing rate of the 17.5 nm QWs, possibly due to larger effect of inhomogeneous broadening. We also report that the dephasing rates for both QWs are linear with the sample temperature below the 30 K. We report the study of ionization equilibrium between the exciton and the electronhole plasma population in the temperature and pressure (excitation density) phase space. Non-resonant excitation of semiconductor creates a nonequilibrium state of electron-hole plasma. We investigate this ionization equilibrium using steady state photoluminescence and time-resolved excitation correlation PL measurements. We present a clear phase diagram (in temperature and carrier density phase space) of this ionization process.A clear density-dependent increase in the ionization ratio is observed and its connection with the Mott transition is discussed. Semiconductor nanocrystals and QDs are another important area of research, mainly due to their huge potential for device application. We present a simple model which combines carrier loss kinetics, detailed balance principle in thermodynamic equilibrium and Pauli exclusion principle to quantitatively explain the observed behaviour of the experimental data.
The phenomenon of spectral diffusion is common to a variety of inhomogeneously broadened systems. Spectral diffusion can be quantified through the frequency–frequency correlation function (FFCF), which is often approximated using observables from a variety of experimental techniques. We present a direct measurement of the temperature-dependent FFCF for excitons in semiconductor quantum wells using two-dimensional coherent spectroscopy. This technique enables the FFCF to be quantified without making any assumptions of the FFCF dynamics. Our results show that the Gauss–Markov approximation, which assumes exponential decay dynamics of the FFCF, is only valid for sample temperatures above 50 K. We compare our results with those obtained by the ellipticity and center-line slope measurements.
The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.