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Quantum 2.0 Conference and Exhibition

Towards High-Fidelity Gates for the Nitrogen-Vacancy Center in Diamond

Jiwon Yun, Hans P. Bartling, Kai-N. Schymik, Margriet van Riggelen, Luc Enthoven, Hendrik Benjamin van Ommen, Masoud Babaie, Fabio Sebastiano, T. H. Taminiau

Published Jan 1, 2024• 0 citations
Publisher

Abstract

We realize high-fidelity gates for the two-qubit system formed by NV center. Using gate set tomography, we report gate fidelities exceeding 99%, and analyze the origin of the errors.
DOI
10.1364/quantum.2024.qth2a.5

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Motivated by the recent experimental progress in exploring the use of a nitrogen-vacancy (NV) center in diamond as a quantum computing platform, we propose schemes for fast and high-fidelity entangling gates on this platform. Using both analytical and numerical calculations, we demonstrate that synchronization effects between resonant and off-resonant transitions may be exploited such that spin-flip errors due to strong driving may be eliminated by adjusting the gate time or the driving field. This allows for fast, high-fidelity entangling operations between the electron spin and one or several nuclear spins. We investigate a two-qubit system where the NV center comprises a N 15 atom and a qubit-qutrit system for the case of a N 14 atom. In both cases, we predict a complete suppression of off-resonant driving errors for two-qubit gates when addressing the NV electron spin conditioned on states of nuclear spins of the nitrogen atom of the defect. Additionally, we predict fidelities > 0.99 for multiqubit gates when including the surrounding C 13 atoms in the diamond lattice in the conditioned logic.
Diamond is a promising platform for quantum information processing as it can host highly coherent qubits that could allow for the construction of large quantum registers. A prerequisite for such devices is a coherent interaction between nitrogen-vacancy (NV) electron spins enabling scalable entanglement. Entanglement between dipolar-coupled NV spin pairs has been demonstrated but with a limited fidelity, and its error sources have not been characterized. Here, we design and implement a robust two-qubit gate between NV electron spins in diamond and quantify the influence of multiple error sources on the gate performance. Experimentally, we demonstrate a record gate fidelity of F 2 q = ( 96.0 ± 2.5 ) % under ambient conditions. Our identification of the dominant errors paves the way towards NV-NV gates beyond the error correction threshold.
Diamond is a promising platform for quantum information processing as it can host highly coherent qubits that could allow for the construction of large quantum registers. A prerequisite for such devices is a coherent interaction between nitrogen vacancy (NV) electron spins. Entanglement between dipolar-coupled NV spin pairs has been demonstrated, but with a limited entanglement fidelity and its error sources have not been characterized. Here, we design and implement a robust, easy to implement entangling gate between NV spins in diamond and quantify the influence of multiple error sources on the gate performance. Experimentally, we demonstrate a record gate fidelity of F=(96.0±2.5) % under ambient conditions. Our identification of the dominant errors paves the way towards NV-NV gates beyond the error correction threshold.