Quantum technologies hold the promise of revolutionizing computing, communication, and sensing, and integrated photonics stands as a key enabler in this realm. Silicon nitride, with its unique combination of low loss, remarkable non-linear performance, and compatibility with existing semiconductor technologies, has emerged as a promising candidate for the implementation of quantum photonic circuits. Alternately, Lithium-Niobate-OnInsulator (LNOI), a material platform well known for its high electro-optic coefficient, has also turned out to be an attractive choice for quantum integrated circuits with the development of low-loss fabrication processes. Moreover, the integration of on-chip photon sources and superconducting nanowire single-photon detectors (SNSPDs) on these platforms has paved the for scalable quantum circuits minimizing the footprint and eliminating the need for lossy interconnects. However, the integration of these components on a single material platform is often hindered by background photons from the strong classical pump light used for processes such as spontaneous parametric down-conversion (SPDC). Here, we propose silicon-implanted SiN and LNOI waveguides as a novel material platform that acts as a passive filter at visible wavelengths while imparting negligible losses in the telecom band. The implantation process can be selectively patterned with manometer precision enabling enhanced tunability of the process. Furthermore, transmission electron microscopy (TEM) results provide a thorough understanding of the material dynamics at the atomic scale allowing accurate modelling of the mode profiles. This breakthrough advances the scalability of quantum photonic technologies where the source, filters, circuits, and detectors can be integrated on a single platform.
Quantum technologies hold the promise of revolutionizing computing, communication, and sensing, and integrated photonics stands as a key enabler in this realm. Silicon nitride, with its unique combination of low loss, remarkable non-linear performance, and compatibility with existing semiconductor technologies, has emerged as a promising candidate for the implementation of quantum photonic circuits. Alternately, Lithium-Niobate-OnInsulator (LNOI), a material platform well known for its high electro-optic coefficient, has also turned out to be an attractive choice for quantum integrated circuits with the development of low-loss fabrication processes. Moreover, the integration of on-chip photon sources and superconducting nanowire single-photon detectors (SNSPDs) on these platforms has paved the for scalable quantum circuits minimizing the footprint and eliminating the need for lossy interconnects. However, the integration of these components on a single material platform is often hindered by background photons from the strong classical pump light used for processes such as spontaneous parametric down-conversion (SPDC). Here, we propose silicon-implanted SiN and LNOI waveguides as a novel material platform that acts as a passive filter at visible wavelengths while imparting negligible losses in the telecom band. The implantation process can be selectively patterned with manometer precision enabling enhanced tunability of the process. Furthermore, transmission electron microscopy (TEM) results provide a thorough understanding of the material dynamics at the atomic scale allowing accurate modelling of the mode profiles. This breakthrough advances the scalability of quantum photonic technologies where the source, filters, circuits, and detectors can be integrated on a single platform.
Integrated photonics is an exciting platform for quantum communication, computing, and sensing due to its inherent stability and scalability. However, full monolithic or hybrid photonic quantum technology demonstrations remain limited owing to performance and integration challenges. One of the main challenges is the filtering the high-power classical pump light from the generated photons in spontaneous parametric down-conversion sources. Here, we report what we believe to be a novel optical filtering technique based on silicon ion implantation in silicon nitride (SiN) waveguides. Our approach effectively introduces selective absorption of near-visible light, achieving nearly 100 dB suppression of the pump light at 775 nm. On the contrary, the insertion loss for light in the telecom C-band near 1550 nm is just around 4 dB with a scope of significant reduction. This result paves the way for practical and efficient integration of quantum sources, filters, and detectors on-chip, advancing the field toward scalable quantum photonic systems.
Quantum technologies have surpassed classical systems by leveraging the unique properties of superposition and entanglement in photons and matter. Recent advancements in integrated quantum photonics, especially in silicon-based and lithium niobate platforms, are pushing the technology toward greater scalability and functionality. Silicon circuits have progressed from centimeter-scale, dual-photon systems to millimeter-scale, high-density devices that integrate thousands of components, enabling sophisticated programmable manipulation of multi-photon states. Meanwhile, lithium niobate, thanks to its wide optical transmission window, outstanding nonlinear and electro-optic coefficients, and chemical stability, has emerged as an optimal substrate for fully integrated photonic quantum chips. Devices made from this material exhibit high efficiency in in generating, manipulating, converting, storing, and detecting photon states, thereby establishing a basis for deterministic multi-photon generation and single-photon quantum interactions, as well as comprehensive frequency-state control. This review explores the development of integrated photonic quantum technologies based on both silicon and lithium niobate, highlighting invaluable insights gained from silicon-based systems that can assist the scaling of lithium niobate technologies. It examines the functional integration mechanisms of lithium niobate in electro-optic tuning and nonlinear energy conversion, showcasing its transformative impact throughout the photonic quantum computing process. Looking ahead, we speculate on the developmental pathways for lithium niobate platforms and their potential to revolutionize areas such as quantum communication, complex system simulation, quantum sampling, and optical quantum computing paradigms.
Lithium-niobate-on-insulator (LNOI) is emerging as a promising platform for integrated quantum photonic technologies because of its high second-order optical nonlinearity, compact footprint, and low propagation loss in a broad wavelength range. Importantly, LNOI allows for creating electro-optically tunable circuits that can be efficiently operated at cryogenic temperature. Their integration with superconducting nanowire single-photon detectors (SNSPDS) paves the way for realizing scalable photonic devices for fast manipulation and detection of quantum states of light. Here we report the monolithic integration of these two key components in a low loss (0.2 dB/cm) LNOI waveguide network. As an experimental showcase of our technology, we demonstrate the combined operation of an electrically tunable Mach Zehnder interferometer–an essential building block for the realization of reconfigurable optical networks-and two waveguide-integrated SNSPDs at its outputs. We show static reconfigurability of our system with a bias-drift free operation over a time of 12 hours, as well as high-speed modulation at frequencies up to 1 GHz.
Lithium-Niobate-On-Insulator (LNOI) is emerging as a promising platform for integrated quantum photonic technologies because of its high second-order nonlinearity and compact waveguide footprint. Importantly, LNOI allows for creating electro-optically reconfigurable circuits, which can be efficiently operated at cryogenic temperature. Their integration with superconducting nanowire single-photon detectors (SNSPDs) paves the way for realizing scalable photonic devices for active manipulation and detection of quantum states of light. Here we demonstrate integration of these two key components in a low loss (0.2 dB/cm) LNOI waveguide network. As an experimental showcase of our technology, we demonstrate the combined operation of an electrically tunable Mach-Zehnder interferometer and two waveguide-integrated SNSPDs at its outputs. We show static reconfigurability of our system with a bias-drift-free operation over a time of 12 hours, as well as high-speed modulation at a frequency up to 1 GHz. Our results provide blueprints for implementing complex quantum photonic devices on the LNOI platform.
In the past decades quantum optics has been at the forefront of quantum innovative technologies. For practical applications, scalable platforms for implementation of quantum optical circuits are vital. This thesis presents two new platforms for scalable implementation of quantum optical circuits, namely, modular approach and monolithic integration. Here, we take the first steps towards the integration of three main elements of every quantum optics circuits: Single-photon emitters, single-photon detectors, and quantum logics. Until now, most quantum optical circuits used separate platforms for single-photon generation and detection. The main challenge in the integration of these technologies, which have different requirements, has slowed down the research in the field. Here, we integrate sources and detectors by first fabricating the devices on their own platform and then transferring and combining them together. Plasma enhanced chemical vapor deposition of silicon nitride followed by etching optical waveguides connect these elements. Removing the Poissonian optical excitation field from the quantum circuit is necessary for integration. Classical optical excitation can be avoided if the sources are electrically pumped. However, fabrication of high-quality electrically pumped sources, suitable for integration, has been limited. The experiments described in chapter 4 are our first step towards addressing the mentioned problem. Defect-free nanowires are grown on <100> direction and their optoelectronic performance are characterized. Nanowire quantum dots, thanks to their waveguiding, purity, coherence and their potentials for deterministic integration with other optical circuits, are promising single-photon sources for on-chip quantum optics. However, precise control of the emission energy of the quantum dots by growth has not become possible yet. Chapter 5 describes a method for on-chip tuning of emission energy of nanowire quantum dots using strain fields. We show the emission energy of independent nanowire quantum dots can be brought into degeneracy without affecting their single-photon emission properties. The quantum optical components have to be routed and connected together to form functional circuits. On a chip, this is usually carried out using optical waveguides. Moreover, manipulation of single photons has to be done in a scalable fashion. Again optical waveguides and ring resonators are very good candidates for this task. Therefore, understanding the behavior of these circuits such as their losses, polarization dependence, and temperature behavior is important. The experiment described in chapter 6 studies the behavior of plasma enhanced silicon nitride waveguides in cryogenic temperatures. We concluded in this chapter that due to weak thermo-optic sensitivity of silicon nitride at cryogenic temperatures, the available thermal budget on the system should be carefully considered. An important step in achieving a scalable platform for quantum optical circuits is deterministic and efficient integration of single-photon sources. In chapter 7, we demonstrate successful integration of III-V nanowire quantum dots with silicon nitride waveguides. The nanowires are deterministically selected and transferred from the original growth chip to the new substrate where they are integrated with low-loss silicon nitride waveguides. Our measurements show that the integrated sources preserve their high quality emission properties. In chapter 8, we describe an alternative approach: amodular method for scalable quantum optics. The proposed technique is based on coupling the single-photon from sources into optical fibers where the photons can be processed and then fed into the single-photon detectors. This approach has high flexibility and is easier to implement but as described in the chapter, at the moment, losses in the interfaces between optical fibers and single-photon sources are a major limiting factor. We conclude the thesis with some possible future directions and exciting new results on integration of single-photon detectors with sources and waveguides. Finally, primary results on on-chip single-photon filtering and removal of the optical excitation field are demonstrated.
Quantum photonics has advanced rapidly and become a leading approach for developing a broad range of quantum technologies, including quantum communications, quantum information processing, quantum computing, and quantum sensing. Besides, the emerging photonic integrated circuits (PIC) technology has been widely used to implement versatile optical elements advantageous for different quantum applications. For example, PIC-based devices have functioned as building blocks, such as photonic qubit sources, linear optical circuits, modulators, and even single-photon detectors, for realizing highly integrated, large-scale quantum computing schemes. In such a powerful quantum photonic integrated circuits (QPIC) scheme, the creation, manipulation, and testing of quantum entanglement states from the generated qubits via a reconfigurable photonic circuitry are essential. Though the state-of-the-art PIC technology is established based on Si photonics due to its widely mature nanophotonic circuit (waveguide) fabrication technology supported by the existing immense semiconductor industry, Si-based PIC has limitations in implementing efficient and fast active elements that usually demand a quadratic nonlinearity. Lithium niobate (LN), renowned as “the silicon of photonics”, has long been a popular material widely used in integrated-optical and nonlinear-optical applications. A great variety of passive and active photonic elements have been realized in the LN platform. Recently, a novel material based on high-quality single-crystalline films of LN, known as thin-film LN on insulator (LNOI), has been developed and has soon drawn enormous attention for its greatly promising ability to realize nanoscale PIC/QPIC in this iconic optical material platform. In this presentation, we report our recent studies on several key LN PIC building blocks for developing novel quantum photonic sources and circuits, including highly integrated photonic-circuit periodically poled lithium niobate (PPLN) chips for photon-pair generation and manipulation, for high-dimensional frequency-entangled qudit production, for time-frequency grid-state generation, for continuous-variable squeezed vacuum state generation, and their potential applications to quantum computing/communication/sensing technology. Besides, a PP-LNOI electro-optic (EO) polarization mode converter (PMC) useful for demonstrating fast control of quantum polarization states and other LNOI circuit elements as QPIC building blocks will also be presented.