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ACS Photonics

Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide

Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis, Arthur D. Bouamra, Lukas Niechziol, Timo Steidl, Ruoming Peng, Jonathan Körber, Rainer Stöhr, Nils Gross, Jurgen H. Smet, Jawad Ul‐Hassan, Péter Udvarhelyi, Ádám Gali, Florian Kaiser, Jörg Wrachtrup

Published May 22, 2024• 18 citations
Publisher

Abstract

Spin-active optical emitters in silicon carbide are excellent candidates toward the development of scalable quantum technologies. However, efficient photon collection is challenged by undirected emission patterns from optical dipoles, as well as low total internal reflection angles due to the high refractive index of silicon carbide. Based on recent advances with emitters in silicon carbide waveguides, we now demonstrate a comprehensive study of nanophotonic waveguide-to-fiber interfaces in silicon carbide. We find that across a large range of fabrication parameters, our experimental collection efficiencies remain above 90%. Further, by integrating silicon vacancy color centers into these waveguides, we demonstrate an overall photon count rate of 181 kilo-counts per second, which is an order of magnitude higher compared to standard setups. We also quantify the shift of the ground state spin states due to strain fields, which can be introduced by waveguide fabrication techniques. Finally, we show coherent electron spin manipulation with waveguide-integrated emitters with state-of-the-art coherence times of T 2 ∼ 42 μs. The robustness of our methods is very promising for quantum networks based on multiple orchestrated emitters.

DOI
10.1021/acsphotonics.4c00538

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Spin-active optical emitters in silicon carbide are excellent candidates toward the development of scalable quantum technologies. However, efficient photon collection is challenged by undirected emission patterns from optical dipoles, as well as low total internal reflection angles due to the high refractive index of silicon carbide. Based on recent advances with emitters in silicon carbide waveguides, we now demonstrate a comprehensive study of nanophotonic waveguide-to-fiber interfaces in silicon carbide. We find that across a large range of fabrication parameters, our experimental collection efficiencies remain above 90%. Further, by integrating silicon vacancy color centers into these waveguides, we demonstrate an overall photon count rate of 181 kilo-counts per second, which is an order of magnitude higher compared to standard setups. We also quantify the shift of the ground state spin states due to strain fields, which can be introduced by waveguide fabrication techniques. Finally, we show coherent electron spin manipulation with waveguide-integrated emitters with state-of-the-art coherence times of T 2 ∼ 42 μs. The robustness of our methods is very promising for quantum networks based on multiple orchestrated emitters.
Color centers in silicon carbide are a promising platform for quantum technologies, offering long-coherence electron and nuclear spins for storing and manipulating quantum information, as well as single-photon emission for quantum communication. Low photon collection efficiency is commonly addressed by integrating color centers into nanophotonic devices. Here, we report a scalable method for the deterministic integration of color centers into silicon carbide nanopillars, using the same nanoscale mask for both implantation of oxygen-related color centers (PL5, PL6) and subsequent nanopillar fabrication via dry etching. This approach solves the issue of low color center creation yield in nanostructures, with figures of merit comparable to bulk samples. We demonstrate count rate enhancements of up to one order of magnitude for PL5 and four times for PL6, while preserving spin coherence times. Our method is directly applicable to other solid-state platforms, offering a scalable route to efficiently integrate color centers into nanostructures.
Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters at low temperatures, the colour centres must be integrated into nanophotonic structures and characterised under cryogenic conditions. Here, we design and fabricate waveguide structures attached with an efficient Dinosaur photonic crystal reflector at one side. The devices show broadband reflection over a range of 60 THz with a peak reflectance above 80 %. Additionally, colour centres were integrated into these structures and characterised at cryogenic conditions. The emission was collected by a tapered-waveguide-tapered-fibre interface. Although the spectral stability of the emitters must be further improved for high excitation powers, the saturation intensity in standard PLE measurements is about 104 kcps. The count rate can be further improved to about 125 kcps with a charge-resonance check measurement scheme. To highlight the relevance of our devices, we theoretically show that these count rates enable optical single-shot readout with a fidelity exceeding 98 %.
Color centers in wide bandgap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, and spin–photon and spin–spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies has amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.
Optically addressable solid-state spin defects are promising candidates for storing and manipulating quantum information using their long coherence ground-state manifold; individual defects can be entangled using photon-photon interactions, offering a path toward large-scale quantum photonic networks.Quantum computing protocols place strict limits on the acceptable photon losses in the system.These lowloss requirements cannot be achieved without photonic engineering, but are attainable if combined with state-of-the-art nanophotonic technologies.However, most materials that host spin defects are challenging to process: as a result, the performance of quantum photonic devices is orders of magnitude behind that of their classical counterparts.Silicon carbide (SiC) is well suited to bridge the classical-quantum photonics gap, since it hosts promising optically addressable spin defects and can be processed into SiC-on-insulator for scalable, integrated photonics.In this paper, we discuss recent progress toward the development of scalable quantum photonic technologies based on solid-state spins in silicon carbide, and discuss current challenges and future directions.
Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters at low temperatures, the colour centres must be integrated into nanophotonic structures and characterised under cryogenic conditions. Here, we design and fabricate waveguide structures attached with an efficient Dinosaur photonic crystal reflector at one side. The devices show broadband reflection over a range of 60 THz with a peak reflectance above 80 %. Additionally, colour centres were integrated into these structures and characterised at cryogenic conditions. The emission was collected by a tapered-waveguide-tapered-fibre interface. Although the spectral stability of the emitters must be further improved for high excitation powers, the saturation intensity in standard PLE measurements is Is,LT = (103.8 ± 4.2) kcps. The count rate can be further improved to about 125 kcps with a charge-resonance check measurement scheme. To highlight the relevance of our devices, we theoretically show that these count rates enable optical single-shot readout with a fidelity exceeding 98%.
Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centres including the nitrogen vacancy defect that has a spin-triplet ground state. However, strong phonon coupling in the infrared range limits photon extraction from these defects. Here, we use nanophotonic structures, specifically micro-pillar and micro-disk resonators, to enhance optical collection and spin-readout. The micro-pillar geometry yields a 4-fold increase in photon collection, accompanied by a 2.4-fold reduction in spectral noise in optically detected magnetic resonance measurements. Consequently, the magnetic field sensitivity is improved by 24%. The large mode volume of the micro-disk supports resonances spanning 1150-1250 nm, enabling broadband coupling to nitrogen vacancy emission lines. Our results demonstrate that fabrication of scalable photonic structures efficiently improves performance of silicon carbide color centers for integrated quantum light generation and sensing.