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Quantum Computing, Communication, and Simulation

Multiwavelength narrow linewidth laser system for Ba+ quantum computing applications

Kostiantyn Nechay, Luukas Kuusela, Pekko Sipilä, Kalle Palomäki, Petteri Uusimaa

Published Mar 12, 2024• 0 citations
Publisher

Abstract

Quantum information processing (QIP) approach based on trapped ions is a promising technology that exploits different ion species as individual qubits and qubit gates, while featuring long coherence times, high fidelity of operations, fast readout, and ion-ion gate entanglement. The practical usefulness of trapped-ion quantum computer depends on its further scaling to a large number of qubits. Meanwhile, trapped-ion quantum computer relies on a set of single-frequency lasers, utilizing them for different functions such as photoionization, atom cooling, optical pumping and qubit operations. Thus, a combination of narrow linewidth lasers is required, with the emission wavelengths precisely defined by the corresponding electronic transitions of the selected ion species. Further development, scalability and commercialization of quantum information technologies is interwind with the availability of affordable and robust single-frequency lasers on a variety of application-specific wavelengths. QIP manifests strict requirements posed to lasers in terms of central wavelength, linewidth, long-term stability, beam quality, polarization extinction ratio, side-mode suppression ratio, etc. In this work we present the development and characterization of multiwavelength narrow linewidth system designed for the Ba+ trapped ion computing. The laser system emits single-frequency, sub-MHz emission at 553 nm, 493 nm and 614 nm based on second-harmonic generation of two separate semiconductor laser platforms. Two-step photoionization of neutral Ba is implemented resonantly through 6s2 1S0 → 6s6p 1P1 transition corresponding to 553 nm wavelength, whereas Ba ion is Doppler cooled on 6S1/2 →6P1/2 transition corresponding to 493 nm. Such single-frequency greenyellow and cyan lasers are based on intracavity frequency doubled vertical-external-cavity surface-emitting laser (VECSEL), serving as an effective replacement of the legacy dye laser, previously used to address these Ba transition. On the other hand, frequency doubled external cavity diode laser (ECDL) is employed to generate 614 nm orange emission needed for 5D5/2→ 6P3/2 transition. The laser system incorporates modular laser engines together with low-noise driving electronics, mechanical and acoustic concealment and provide laser locking interfaces to high-finesse optical cavity or a wavemeter.

DOI
10.1117/12.3000690

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Quantum information processing (QIP) approach based on trapped ions is a promising technology that exploits different ion species as individual qubits and qubit gates, while featuring long coherence times, high fidelity of operations, fast readout, and ion-ion gate entanglement. The practical usefulness of trapped-ion quantum computer depends on its further scaling to a large number of qubits. Meanwhile, trapped-ion quantum computer relies on a set of single-frequency lasers, utilizing them for different functions such as photoionization, atom cooling, optical pumping and qubit operations. Thus, a combination of narrow linewidth lasers is required, with the emission wavelengths precisely defined by the corresponding electronic transitions of the selected ion species. Further development, scalability and commercialization of quantum information technologies is interwind with the availability of affordable and robust single-frequency lasers on a variety of application-specific wavelengths. QIP manifests strict requirements posed to lasers in terms of central wavelength, linewidth, long-term stability, beam quality, polarization extinction ratio, side-mode suppression ratio, etc. In this work we present the development and characterization of multiwavelength narrow linewidth system designed for the Ba+ trapped ion computing. The laser system emits single-frequency, sub-MHz emission at 553 nm, 493 nm and 614 nm based on second-harmonic generation of two separate semiconductor laser platforms. Two-step photoionization of neutral Ba is implemented resonantly through 6s2 1S0 → 6s6p 1P1 transition corresponding to 553 nm wavelength, whereas Ba ion is Doppler cooled on 6S1/2 →6P1/2 transition corresponding to 493 nm. Such single-frequency greenyellow and cyan lasers are based on intracavity frequency doubled vertical-external-cavity surface-emitting laser (VECSEL), serving as an effective replacement of the legacy dye laser, previously used to address these Ba transition. On the other hand, frequency doubled external cavity diode laser (ECDL) is employed to generate 614 nm orange emission needed for 5D5/2→ 6P3/2 transition. The laser system incorporates modular laser engines together with low-noise driving electronics, mechanical and acoustic concealment and provide laser locking interfaces to high-finesse optical cavity or a wavemeter.
Quantum phenomena of superposition paved the way for the quantum computer demonstrations utilizing different approaches of qubit creation and manipulation, such as, based on trapped ions, neutral atoms, nitrogen vacancies, photonic integrated circuits, superconducting loops, etc. The trapped-ion-based platform demonstrated record long coherence times, high-fidelity gates, qubit connectivity and potential for fault-tolerant operation [1]. Number of atomic species have been investigated as basis for qubits and various qubit types along with state-preparation and measurement (SPAM) techniques have been developed. These qubit initialization and readout operations as well as atomic ion preparation stages of photoionization and atom cooling are implemented by single-frequency lasers with narrow emission linewidths at frequencies corresponding to electronic transitions in atomic ion specie. Therefore, several single-frequency lasers with well-defined parameters such as linewidth, output power, polarization, intensity noise are required for trapped-ion-based quantum computer. Considering that currently there are about 11 ion species being employed as qubits, thus more than 100 different laser wavelengths are required across the spectrum. For practical use, scalability of quantum computer is required, i.e., steady increase of qubits number without the loss of quantum system control. Therefore, availability and performance of single-frequency stabilized laser systems with tailorable emission parameters is one of pre-requirements for quantum information processing field development and commercialization success.
Trapped ions are a leading technology for quantum computing, but their reliance on bespoke tabletop laser and optical systems remains a major obstacle to scaling and robustness. Integrated silicon nitride lasers, compatible with future monolithic integration with surface electrode ion traps, have recently demonstrated frequency-selective qubit state preparation and measurement as well as interrogation of an optical clock transition. However, coherent qubit gates impose even more stringent requirements on laser phase noise, and their implementation with integrated laser sources has remained an outstanding challenge. Here, we use a visible-wavelength integrated Brillouin laser stabilized to an integrated coil resonator to drive coherent single- and two-qubit gates with \Sr optical qubits. We measure an average single-qubit fidelity of 99.61%±0.03%99.61\%\pm 0.03\%99.61%±0.03% per Clifford gate with randomized benchmarking and use a two-qubit Mølmer-Sørensen interaction to generate an entangled Bell state with a fidelity of 92.35%±1.50%92.35\% \pm 1.50\%92.35%±1.50%. The qubit exhibits a bare Ramsey coherence time of 659±9 μ659 \pm 9~μ659±9 μs, more than a tenfold improvement over our previous implementation, which extends to 1.750±0.0331.750 \pm 0.0331.750±0.033~ms with an echo. These results demonstrate, for the first time, that integrated visible-wavelength narrow-linewidth photonic lasers can meet the phase-noise requirements for coherent quantum logic with trapped ion optical qubits, providing a path for scalable optical systems integrated within trapped ion quantum processors.
Integrating precise, stable, ultra-low noise visible light lasers into atomic systems is critical for advancing quantum information sciences and improving scalability and portability. Trapped ions are a leading approach for high-fidelity quantum computing, high-accuracy optical clocks, and precision quantum sensors. However, current ion-based systems rely on bulky, lab-scale precision lasers and optical stabilization cavities for optical clock and qubit operations, constraining the size, weight, scalability, and portability of atomic systems. Chip-scale integration of ultra-low noise lasers and reference cavities operating directly at optical clock transitions and capable of qubit and clock operations will represent a major transformation in atom and trapped ion-based quantum technologies. However, this goal has remained elusive. Here we report the first demonstration of chip-scale optical clock and qubit operations on a trapped ion using a photonic integrated direct-drive visible wavelength Brillouin laser stabilized to an integrated 3-meter coil-resonator reference cavity and the optical clock transition of a 88^{88}88Sr+^++ ion trapped on a surface electrode chip. We also demonstrate for the first time, to the best of our knowledge, trapped-ion spectroscopy and qubit operations such as Rabi oscillations and high fidelity (99%) qubit state preparation and measurement (SPAM) using direct drive integrated photonic technologies without bulk optic stabilization cavities or second harmonic generation. Our chip-scale stabilized Brillouin laser exhibits a 6 kHz linewidth with the 0.4 Hz quadrupole transition of 88^{88}88Sr+^++ and a self-consistent coherence time of 60 μμμs via Ramsey interferometry on the trapped ion qubit. Furthermore, we demonstrate the stability of the locked Brillouin laser to 5×10−13/τ\times10^{-13}/ \sqrtτ×10−13/τ​ at 1 second using dual optical clocks.
Experiments in atomic, molecular, and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power, and intensity stability. Vertical external-cavity surface-emitting lasers (VECSELs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. Here we present and characterize VECSEL systems that can perform all laser-based tasks for quantum information processing experiments with trapped magnesium ions. For photoionization of neutral magnesium, 570.6 \,nm light is generated with an intracavity frequency-doubled VECSEL containing a lithium triborate (LBO) crystal for second harmonic generation. External frequency doubling produces 285.3 \,nm light for resonant interaction with the 1S0↔^{1}S_{0}\leftrightarrow1S0​↔ 1P1^{1}P_{1}1P1​ transition of neutral Mg. Using an externally frequency-quadrupled VECSEL, we implement Doppler cooling of 25^{25}25Mg+^{+}+ on the 279.6 \,nm 2S1/2↔^{2}S_{1/2}\leftrightarrow2S1/2​↔ 2P3/2^{2}P_{3/2}2P3/2​ cycling transition, repumping on the 280.4 \,nm 2S1/2↔^{2}S_{1/2}\leftrightarrow2S1/2​↔ 2P1/2^{2}P_{1/2}2P1/2​ transition, coherent state manipulation, and resolved sideband cooling close to the motional ground state. Our systems serve as prototypes for applications in AMO requiring single-frequency, power-scalable laser sources at multiple wavelengths.
We demonstrate two systems based on vertical-external-cavity surface-emitting lasers (VECSELs) for producing ultraviolet laser light at wavelengths of 235 and 313 nm. The systems are suitable for quantum information processing with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers. One system generates 2.4 W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a gain mirror based on GaInNAs/GaAs quantum wells, enabling wavelength extension above 1200 nm with manageable strain in the GaAs lattice. This system generates 1.6 W at 1252 nm, which is converted to 41 mW of 313 nm light that is used to laser cool trapped 9Be+ ions and quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates.