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Frontiers in Optics

Integrated Polarization-Diverse Grating Emitters for Trapped-Ion Quantum Systems

Sabrina Corsetti, Ashton Hattori, Reuel B. Swint, Milica Notaros, Gavin N. West, Tal Sneh, Felix Knollmann, Patrick T. Callahan, Thomas Mahony, Ethan Clements, Dave Kharas, Cheryl M. Sorace-Agaskar, Robert McConnell, John Chiaverini, Jelena Notaroš

Published Jan 1, 2023• 10 citations
Publisher

Abstract

We design and experimentally demonstrate the first pair of integrated TE- and TM- emitting gratings at a wavelength of 422nm, targeting the 52s1/2-52p1/2 transition of 88Sr+ ions, to enable operations requiring diverse polarizations for integrated-photonics-based trapped-ion quantum systems.
DOI
10.1364/fio.2023.jtu7a.3

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Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si 3 N 4 ) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb + -applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Trapped ions are a promising modality for quantum systems, with demonstrated utility as the basis for quantum processors and optical clocks. However, traditional trapped-ion systems are implemented using complex free-space optical configurations, whose large size and susceptibility to vibrations and drift inhibit scaling to large numbers of qubits. In recent years, integrated-photonics-based systems have been demonstrated as an avenue to address the challenge of scaling trapped-ion systems while maintaining high fidelities. While these previous demonstrations have implemented both Doppler and resolved-sideband cooling of trapped ions, these cooling techniques are fundamentally limited in efficiency. In contrast, polarization-gradient cooling can enable faster and more power-efficient cooling and, therefore, improved computational efficiencies in trapped-ion systems. While free-space implementations of polarization-gradient cooling have demonstrated advantages over other cooling mechanisms, polarization-gradient cooling has never previously been implemented using integrated photonics. In this paper, we design and experimentally demonstrate key polarization-diverse integrated-photonics devices and utilize them to implement a variety of integrated-photonics-based polarization-gradient-cooling systems, culminating in the first experimental demonstration of polarization-gradient cooling of a trapped ion by an integrated-photonics-based system. By demonstrating polarization-gradient cooling using an integrated-photonics-based system and, in general, opening up the field of polarization-diverse integrated-photonics-based devices and systems for trapped ions, this work facilitates new capabilities for integrated-photonics-based trapped-ion platforms.
Ion traps are a promising platform for the realisation of high-performance quantum computers. To enable the future scalability of these systems, integrated photonic solutions for guiding and manipulating the laser light at chip level are a major step. Such passive optical components offer the great advantage of providing beam radii in the μm range at the location of the ions without increasing the number of bulk optics. Different wavelengths, from UV to NIR, as well as laser beam properties, such as angle or polarisation, are required for different cooling and readout processes of ions. We present simulation results for different optical photonic components, such as grating outcouplers or waveguide splitters and their applications on ion trap chips. Furthermore, we will introduce the experimental setup for the optical characterisation of the fabricated structures.