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Physica Scripta

Hybrid multilevel-multiwavelength signaling scheme for optical data transmission

Mikhail V. Maximov, Yuri M. Shernyakov, Nikita Yu. Gordeev, Vladimir G. Dubrovskii, Alexey M. Nadtochiy, A. E. Zhukov

Published Nov 16, 2023• 3 citations
Publisher

Abstract

Abstract We suggest an idea of data encoding scheme based on the switching from the ground state (GS) to excited state (ES) lasing in quantum dot (QD) lasers with increase in injection current. The groups of two bits are assigned to lasing spectra that comprise either one or both GS and/or ES lasing lines depending on injection current. We expect that the proposed encoding scheme can potentially combine some advantages of multilevel signaling and wavelength division multiplexing.

DOI
10.1088/1402-4896/ad0d66

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Abstract We suggest an idea of data encoding scheme based on the switching from the ground state (GS) to excited state (ES) lasing in quantum dot (QD) lasers with increase in injection current. The groups of two bits are assigned to lasing spectra that comprise either one or both GS and/or ES lasing lines depending on injection current. We expect that the proposed encoding scheme can potentially combine some advantages of multilevel signaling and wavelength division multiplexing.
The behaviour of a dual state quantum dot laser undergoing optical injection is analysed. Depending on the injection current the free-running operation of the slave can be ground state only emission, both ground state and excited state emission or excited state emission only. Complete suppression of the excited state in the dual state lasing regime via sufficiently strong optical injection of the ground state is presented. Injection induced switching between two longitudinal modes of the ground state is also presented in the ground state only regime.
We analyze theoretically nonlinear dynamics of an optically injected two-mode quantum dot laser lasing simultaneously from the ground and excited states. We show that although the external optical signal is injected into the ground-state mode alone, it can lead to the generation of regular picosecond pulses and pulse packages in the intensity of the excited-state mode. Generation of regular streams of picosecond pulses is attributed to an intrinsic gain switching mechanism where the relaxation time is modulated by the oscillations in the occupation of the ground and excited energy states.
The theory of four-wave mixing (FWM) in the quantum dot (QD) semiconductor optical amplifiers (SOAs) is discussed by combining the QD rate equations system, the quantum-mechanical density-matrix theory, and the pulse propagation in QD SOAs including the three region of QD structure ground state (GS), excited state (ES), and wetting layer. Also, relations for differential gain, gain integral, and nonlinear susceptibility of both pump, probe, and signal pulses were discussed. Gain and differential gain have been calculated for QD structure. FWM efficiency and its components [spectral hole burning (SHB), carrier heating, and carrier density pulsation] are calculated. It is found that inclusion of ES in the formulas and in the calculations is essential since it works as a carrier reservoir for GS. It is found that QD SOA with enough capture time from ES to GS will reduce the SHB component, and so it is suitable for telecommunication applications that require symmetric conversion and independent detuning.
We theoretically investigate power-induced lasing state switching and bistability in a two-state quantum dot laser subject to optical injection. The simulated results show that, for a free-running two-state quantum dot laser operating at the ground state under low current, a power-induced lasing state switching between the ground state and the excited state can be achieved through introducing optical injection with a frequency (winj) close to the lasing frequency of excited state (wES). The injection power required for the state switching depends on the scanning route of injection power, i.e. there may exist state bistability for the injection power within a certain region. For forward scanning injection power, with the increase of frequency detuning (ΔΩ = winj – wES), the injection power required for the state switching shows a decreasing trend accompanied by slight fluctuations. However, for backward scanning injection power, the injection power required for the state switching exhibits obvious fluctuations with the increase of ΔΩ. The width of the hysteresis loop fluctuates with ΔΩ, and the fluctuation amplitude is increased with the increase of the injection current. Additionally, the influences of the inhomogeneous broadening factor and the electron escape rate on the bistability performances are analyzed.