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Nanophotonic Resonator Design for On-chip Quantum Memories

Fabian Becker, San Kyu Kim, Kai Müller

Published Jan 1, 2023• 1 citation
Publisher

Abstract

We present nanophotonic designs for on-chip Er:Y2SiO5quantum memories with high coupling efficiency between waveguide mode and erbium ensembles, allowing AFC efficiencies up to 75 % under current material, setup and fabrication limitations.
DOI
10.1364/cleo_at.2023.jw2a.78

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Mar 16, 2016•5 citations
This thesis presents on-chip quantum storage of telecommunication wavelength light using nanophotonic resonators coupled to erbium ions. Storage of light in an optical quantum memory has applications in quantum information and quantum communication. For example, long distance quantum communication using quantum repeater protocols is enabled by quantum memories. Efficient and broadband quantum memories can be made from resonators coupled to ensembles of atoms. Like other rare earth ions, erbium is appealing for quantum applications due to its long optical and hyperfine coherence times in the solid state at low temperatures. However, erbium is unique among rare earth ions in having an optical transition in the telecommunication C band (1540 nm), making it particularly appealing for quantum communication applications. In this work, we use nano-scale resonators coupled to erbium-167 ions in yttrium orthosilicate crystals (167Er 3+:Y2SiO5). We demonstrate quantum storage in two types of resonators. In a nanobeam photonic crystal resonator milled directly in 167Er 3+:Y2SiO5, we show storage of weak coherent states using the atomic frequency comb protocol. The storage fidelity for single photon states is estimated to be at least 93.7% ± 2.4% using decoy state analysis, Storage of up to 10 μs and multimode storage are demonstrated. Using a hybrid amorphous silicon 167Er 3+:Y2SiO5 resonator and on-chip electrodes, we demonstrate a multifunctional memory using the atomic frequency comb protocol with DC Stark shift control. In addition dynamic control of memory time, Stark shift control allows modifications to the frequency and bandwidth of stored light. We show tuning of the output pulse by ± 20 MHz relative to the input pulse, and broadening of the pulse bandwidth by more than a factor of three. The storage efficiency in both devices was limited to < 1%. On the way to these results, we describe 167Er 3+:Y2SiO5 spectroscopy measurements including optical coherence times and hyperfine lifetimes below 1 K, and we estimate the linear DC stark shift along two crystal directions. The design and fabrication of the on-chip resonators is presented. We discuss the limitations to storage time and efficiency, including superhyperfine coupling and resonator parameters, and we outline a path forward for improving the storage efficiency in these types of devices.
Integrated photonic circuits offer great promise for quantum technologies. However, due to the rapid propagation of light, many envisioned applications require efficient on-chip quantum memories with a programmable delay, compact footprint, and high fidelity. Implementing this based on standard semiconductor processing technology is an outstanding challenge. Here, we realize such memories using erbium-doped silicon waveguides, fabricated as part of a multi-wafer project by a nanophotonic foundry. We demonstrate light storage with a 44.2(9) MHz44.2(9)\ \text{MHz}44.2(9) MHz bandwidth and a programmable delay exceeding 1 μs1\ μ\text{s}1 μs in a device with a footprint of only 1.5×10−2 mm21.5\times 10^{-2}\ \text{mm}^21.5×10−2 mm2, outperforming on-chip delay lines by many orders of magnitude. The phase of the read-out light field is preserved with a visibility of 91.3(30) %91.3(30)\ \%91.3(30) %. The efficiency of 1.89(28)×10−81.89(28)\times 10^{-8}1.89(28)×10−8 can be improved in future devices through resonator enhancement and higher dopant concentrations. With this, the demonstrated approach will pave the way towards applications in photonic quantum computing based on scalable silicon processing technology.
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Rare-earth-ion doped crystals are state-of-the-art materials for optical quantum memories and quantum transducers between optical and microwave photons. Here we describe our progress towards a nanophotonic quantum memory based on a rare-earth (Neodymium) doped yttrium orthosilicate (YSO) photonic crystal resonator. The Purcell-enhanced coupling of the 883 nm transitions of Neodymium (Nd3+) ions to the nano-resonator results in increased optical depth, which could in principle facilitate highly efficient photon storage via cavity impedance matching. The atomic frequency comb (AFC) memory protocol can be implemented in the Nd:YSO nano-resonator by efficient optical pumping into the long-lived Zeeman state. Coherent optical signals can be stored and retrieved from the AFC memory. We currently measure a storage efficiency on par with a bulk crystal Nd:YSO memory that is millimeters long. Our results will enable multiplexed on-chip quantum storage and thus quantum repeater devices using rare-earth-ions.