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Elsevier eBooks

Lithium niobate on insulator for nonlinear and quantum applications

Yuanlin Zheng, Yuanhua Li, Xianfeng Chen

Published Jan 1, 2023• 4 citations
Publisher
DOI
10.1016/b978-0-32-398384-6.00023-1

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Sources of spectrally engineered photonic states are a key resource in several quantum technologies. Of particular importance are the so-called factorizable biphoton states, which possess no spectral entanglement and hence, are ideal for heralded generation of high-purity single photons. An essential prerequisite for generating these states through nonlinear frequency conversion is the control over the group indices of the photonic modes of the source. Here, we show that thin-film lithium niobate on insulator (LNOI) is an excellent platform for this purpose. We design and fabricate periodically poled ridge waveguides in LNOI to demonstrate group index engineering of its guided photonic modes and harness this control to experimentally realize on-chip group index matched type-II sum-frequency generation (SFG). Also, we numerically study the role of the top cladding layer in tuning the dispersion properties of the ridge waveguide structures and reveal a distinctive difference between the air and silica-clad designs which are currently among the two most common device cladding configurations in LNOI. We expect that these results will be relevant for various classical and quantum applications where dispersion control is crucial in tailoring the nonlinear response of the LNOI-based devices.

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Lithium niobate on insulator (LNOI), thanks to its electro-optic properties and second order nonlinearity, is one of the most promising photonic materials for on-chip implementation of a complex photonic integrated circuit (PIC) [1]. Integration of rare earth ion emitters (RIE), characterized by high coherent transitions in both optical and microwave domains, into LNOI is a very attractive perspective to fully exploit the potential of this material in quantum optics applications and for on chip light generation and amplification. By choosing Erbium ions these functionalities can be implemented at telecom wavelengths (~1550 nm). Erbium integration in LNOI can be achieved using the smart cut technique [2]. However, this approach implies heating the material up to ~1100 °C, approaching the Curie temperature of lithium niobate (~1200 °C). Ion implantation also permits the incorporation of RIE into the lithium niobate (LN) crystal structure, operating at lower temperature with high spatial precision of the doped region in a complex PIC.

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Sources of spectrally engineered photonic states are a key resource in several quantum technologies. Of particular importance are the so-called factorizable biphoton states, which possess no spectral entanglement and hence, are ideal for heralded generation of high-purity single photons. An essential prerequisite for generating these states through nonlinear frequency conversion is the control over the group indices of the photonic modes of the source. Here, we show that thin-film lithium niobate on insulator (LNOI) is an excellent platform for this purpose. We design and fabricate periodically poled ridge waveguides in LNOI to demonstrate group index engineering of its guided photonic modes and harness this control to experimentally realize on-chip group index matched type-II sum-frequency generation (SFG). Also, we numerically study the role of the top cladding layer in tuning the dispersion properties of the ridge waveguide structures and reveal a distinctive difference between the air and silica-clad designs which are currently among the two most common device cladding configurations in LNOI. We expect that these results will be relevant for various classical and quantum applications where dispersion control is crucial in tailoring the nonlinear response of the LNOI-based devices.
As scalable and reconfigurable photonic quantum processors gain increasing attention, lithium niobate-on-insulator (LNOI) is positioning itself as a promising platform for non-classical applications [1]. The fabrication of periodically poled waveguides enables the utilization of the second order nonlinearity, which can be used to create on-chip, high-brightness photon-pair sources [2]. Unlike platforms that rely on weak third-order effects for photon generation, LNOI offers a more efficient approach for quantum information processing and linear optical quantum computing with continuous wave (CW) pump lasers.
Lithium niobate on insulator (LNOI), thanks to its electro-optic properties and second order nonlinearity, is one of the most promising photonic materials for on-chip implementation of a complex photonic integrated circuit (PIC) [1]. Integration of rare earth ion emitters (RIE), characterized by high coherent transitions in both optical and microwave domains, into LNOI is a very attractive perspective to fully exploit the potential of this material in quantum optics applications and for on chip light generation and amplification. By choosing Erbium ions these functionalities can be implemented at telecom wavelengths (~1550 nm). Erbium integration in LNOI can be achieved using the smart cut technique [2]. However, this approach implies heating the material up to ~1100 °C, approaching the Curie temperature of lithium niobate (~1200 °C). Ion implantation also permits the incorporation of RIE into the lithium niobate (LN) crystal structure, operating at lower temperature with high spatial precision of the doped region in a complex PIC.