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Superconductor Science and Technology

Design of a 240 GHz on-chip dual-polarization receiver for SIS mixer arrays

Jakob Wenninger, Faouzi M. Boussaha, Christine Chaumont, Boon-Kok Tan, G. Yassin

Published Apr 4, 2023• 5 citations
Publisher

Abstract

Abstract We report the design of a compact dual-polarization on-chip superconductor–insulator–superconductor receiver for array applications. The planar-circuit receiver chip is comprised of the entire radio frequency (RF) signal processing chain with three main circuit components alongside some auxiliary circuits: (1) a polarization splitting 4-probe orthomode transducer (OMT) that couples the RF and local oscillator signal from free space to the chip via a drilled feedhorn; (2) two hybrids that recombine the power of each polarization from the two sets of orthogonal OMT probes; and (3) twin-junction Nb/AlOx/Nb mixers that downconvert the recombined signals to the intermediate frequency. We ensure that the four side walls of each pixel are free from obscuration, using only the top and bottom of the pixel for various connections. Consequently, the design is extendable to a large format array. In this paper, we present the detailed design of the on-chip receiver, including extensive heterodyne simulations and its potential extension into a large format array.

DOI
10.1088/1361-6668/acca51

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arXiv:2606.14124•IEEE Transactions on Terahertz Science and Technology•Jan 1, 2026•0 citations
Abstract We report the design of a compact dual-polarization on-chip superconductor–insulator–superconductor receiver for array applications. The planar-circuit receiver chip is comprised of the entire radio frequency (RF) signal processing chain with three main circuit components alongside some auxiliary circuits: (1) a polarization splitting 4-probe orthomode transducer (OMT) that couples the RF and local oscillator signal from free space to the chip via a drilled feedhorn; (2) two hybrids that recombine the power of each polarization from the two sets of orthogonal OMT probes; and (3) twin-junction Nb/AlOx/Nb mixers that downconvert the recombined signals to the intermediate frequency. We ensure that the four side walls of each pixel are free from obscuration, using only the top and bottom of the pixel for various connections. Consequently, the design is extendable to a large format array. In this paper, we present the detailed design of the on-chip receiver, including extensive heterodyne simulations and its potential extension into a large format array.
We report the design of a 230 GHz dual-polarization (2-pol) balanced Superconductor-Insulator-Superconductor (SIS) receiver that can be easily extended for large array applications. We achieve this by integrating all of the required radio frequency (RF) and local oscillator (LO) components on-chip using planar superconducting circuit technology, therefore simplifying the architecture of the receiver block substantially. One major feature of our design is the planar LO injection scheme, which couples the LO with a single on-chip antenna and distributes the LO power via a series of microstrip couplers to the balanced mixers of each polarization of each pixel. In this paper, we describe in detail the design and layout of the individual planar circuit components of our receiver, as well as how they are integrated to form a full receiver. We then conclude the paper with the design of a 2-pixel array demonstrator, illustrating how the balanced SIS mixer and the LO distribution network can be extended to form an even larger array.
A multipixel array equipped with dual-polarization superconductor-insulator-superconductor junction mixers at approximately 350 GHz is considered to improve the efficiency and survey speed of a telescope. This study develops a compact mixer with a planar orthomode transducer as a key component. Signals coming from a circular waveguide are separated into two polarizations via orthogonal waveguide probes, and then transmitted to the junctions through the tuning circuit. To suppress resonance, metallic blocks confine the RF signals within the circular waveguide, and a 2-μm-thick silicon nitride membrane, on which all devices were implemented, was suspended across the circular waveguide. The orthomode transducer, simulated with a three-dimensional electromagnetic simulator, has a cross-polarization of less than -20 dB between 306 and 367 GHz. The IF circuit consists of a low pass filter, coplanar waveguides, and a transition to coaxial. The return loss of the IF circuit is less than -20 dB up to 16 GHz from both simulations and measurements. The superconductor-insulator-superconductor junction mixers have been fabricated with quality factor (Rsg/Rn) of 8 and the double-side-band receiver noise temperatureTrxis approximately 120 K between 320 and 360 GHz.
A heterodyne receiver incorporating superconductor-insulator-superconductor (SIS) mixers has been designed to cover the frequency range from 400 to 520 GHz of the Submillimeter Array (SMA). Various tuning circuits have been employed to resonate out the geometric capacitance of the junction and provide impedance matching to the waveguide probe. Our measurements indicated that a receiver noise temperature of around 90 K, with the contributions from the input noise and intermediate frequency (IF) noise estimated to be around 60 K and 10 K, respectively. SIS mixers integrated with planar orthomode transducers (OMT) have also been designed at 345 GHz for dual polarization detections, and results from the 3-dimensional (3-D) electromagnetic (EM) simulations are presented.
We present the design of an integrated dual-polarisation superconductor-insulator-superconductor (SIS) mixer operating at ALMA Band 10 frequency range. All the RF components, including the orthomode transducer (OMT), the quadrature hybrid and the SIS mixer circuits, are designed as superconducting planar circuits to form a single planar mixer chip. The mixer circuits will be fabricated using standard thin film deposition technology on an ultra-thin silicon-on-insulator (Sol) substrate. In this paper, we discuss in detail the design of the various RF components that make up the complete dual-polarisation SIS mixer chip, and provide the predicted performance using rigorous electromagnetic modelling. The optimised designs of these components are then integrated in a superconducting quantum mixer circuit modelling (SuperMix) environment for assessing the performance of the heterodyne parameters of the mixer such as mixer gain and noise temperature.
We have fabricated prototype superconductor integrated circuits (ICs), which accommodate planar orthomode transducer (OMT) and balanced superconductor-insulator-superconductor (SIS) mixers operating at D-band (125-163 GHz). The fabrication of the ICs is different from the conventional SIS mixer fabrication process in several aspects because of new features and components being introduced and incorporated. In particular, very flat silicon membranes that mechanically support the planar OMT and the waveguide probes for local oscillator coupling were formed with a combination of dry and wet etching methods to completely remove the handle layer and the buried oxide layer of the silicon on insulator substrates. We also applied an anodization passivation of the surface of the ground plane and a via-hole etching process with an i-line stepper in the formation of low-leakage SIS junctions. The SIS junctions of moderately good quality have been fabricated with an average quality factor as high as 18, which indicate the integrity of the junction definition with the complex fabrication of ICs.
Large-format heterodyne focal plane arrays require highly integrated receiver architectures while maintaining low noise and sufficient sideband rejection, which remains challenging for superconducting SIS mixers at millimeter wavelengths. In this work, we demonstrate, for the first time, a monolithic dual-polarization sideband-separating superconductor-insulator-superconductor (SIS) mixer operating at 2 mm wavelengths (125-163 GHz) on a silicon-on-insulator substrate. The integrated SIS mixer achieves a sideband rejection ratio exceeding 10 dB over the 4-8 GHz intermediate-frequency (IF) band across most of the radio-frequency (RF) range, with a minimum single-sideband (SSB) receiver noise temperature as low as approximately 60 K. As a key building block of the hybrid planar integration (HPI) architecture, this result verifies the feasibility of highly integrated large-format heterodyne focal plane arrays, providing a practical path toward substantially expanding the field of view of millimeter and submillimeter-wave radio telescopes.