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Annual Meeting Optical Society of America

Improved squeezing in multilayer semiconductor GaAs-AlAs waveguides with third-order nonlinearity

Xiaolong Zhang, M. K. Udo, Seng‐Tiong Ho

Published Jan 1, 1993• 0 citations
Publisher

Abstract

The generation of squeezed-state light in χ(3) media has been demonstrated in various systems.
DOI
10.1364/oam.1993.wii.4

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The signal to noise ratio of optical systems is ultimately limited by the shot noise due to the Poissonian statistics of the light field. In recent years there has been a considerable effort to find ways to overcome this limitation by generating non-classical light with sub-shot noise statistics. Several groups have demonstrated non-classical light generation in diode lasers or light emitting diodes, and the amplitude fluctuations have been reduced substantially below the shot noise level [1,2]. However, for phase-sensitive measurements it is necessary to generate the more general quadrature squeezed states. Such quadrature squeezed light can be generated either by second-order or third-order nonlinear processes provided the nonlinear material has very low losses at the optical wavelength. To date, the successful generation schemes for quadrature squeezed light have been restricted to atomic vapours, optical fibres, or second-order nonlinear crystals [3]. The possibility of using the large χ(3) nonlinearities of semiconductors at frequencies below the band gap where the optical absorption is small has been discussed in the literature, but so far there have been no successful experiments [4-6]. In this paper we report measurements on GaAs/Al0.3Ga0.7As multiple quantum well waveguides and bulk ZnS in the wavelength range 750 - 890nm. Although we measure much larger nonlinearities in the quantum wells, the strong two-photon absorption is detrimental for squeezed light generation. However, in the ZnS where the laser frequency is below the two- photon absorption edge, we have succeeded in generating quadrature squeezed light in a semiconductor for the first time. On the basis of our results, we would expect that squeezed light could be generated in many other semiconductor systems provided the photon energy is less than half the band-gap energy.
The roles of the asymmetry of coherent light and of an active medium in squeezed-state generation in a weakly noncentrosymmetric semiconductor are discussed. It is suggested that origin of medium asymmetry lies in the parity indefiniteness of the transition states, whereas field asymmetry is due to the polarization property of light. Third-order nonlinear optical susceptibility is obtained from the semiclassical density matrix approach, whereas the light-squeezing process is studied by use of Heisenberg’s equation of motion. The analysis is applied to GaAs that has been duly irradiated by a tunable nanosecond pulsed Co:MgF2 laser with its photon energy off resonant below the semiconductor’s band edge. It has been found that the effect of asymmetry on squeezed-state generation and photon number is finite only when both of the asymmetries are present simultaneously. One may also notice that the asymmetry improves the squeezing level and reduces the time span of squeezed-light generation.