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Nonlinear Guided Waves and Their Applications

Bistability and Switching in a Rib Waveguide Resonator

Ulf Peschel, Dirk Michaelis, Thomas Peschel, F. Lederer

Published Jan 1, 1995• 0 citations
Publisher

Abstract

Photonic data transmission and processing require highly efficient all-optical elements for signal amplification, switching and data storage. It could be shown experimentally that semiconductor planar resonators can be envisaged as promising candidates [1]. In particular, optical bistability, that has been shown to exist in these configurations, opens a wide field of applications. Because the operating frequencies are near the band gap of the direct semiconductors used the nonlinearities are giant. Hence the critical power for nonlinear effects to occur is fairly moderate. In view of these advantages it might be worthwhile to study such resonators in a waveguide scheme because it can be included into integrated optics configurations. In planar resonators one has not to worry about the absorption, being extremely large near the gap, because the overall thickness is only a few micrometers and they are usually operated in reflection. The situation appears more involved in waveguides. Usually one prefers to exploit the transmitted signal in order to separate input and output channels. Moreover the efficiency of the distributed Bragg reflectors, surrounding the cavity, is usually some orders of magnitude less than that of conventional planar mirrors requiring rather long reflectors. Because the cavity length exceeds that of planar resonators considerably too one has to guarantee that the overwhelming part of the resonator is essentially transparent for the guided mode. This has of course the consequence that it does not contribute to any resonant nonlinear effect. Hence we propose a resonator that is only loaded by a thin layer of nonlinear but absorbing material (GaAs) in the cavity region (see Fig.1).

DOI
10.1364/nlgw.1995.nsab15

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Photonic data transmission and processing require highly efficient all-optical elements for signal amplification, switching and data storage. It could be shown experimentally that semiconductor planar resonators can be envisaged as promising candidates [1]. In particular, optical bistability, that has been shown to exist in these configurations, opens a wide field of applications. Because the operating frequencies are near the band gap of the direct semiconductors used the nonlinearities are giant. Hence the critical power for nonlinear effects to occur is fairly moderate. In view of these advantages it might be worthwhile to study such resonators in a waveguide scheme because it can be included into integrated optics configurations. In planar resonators one has not to worry about the absorption, being extremely large near the gap, because the overall thickness is only a few micrometers and they are usually operated in reflection. The situation appears more involved in waveguides. Usually one prefers to exploit the transmitted signal in order to separate input and output channels. Moreover the efficiency of the distributed Bragg reflectors, surrounding the cavity, is usually some orders of magnitude less than that of conventional planar mirrors requiring rather long reflectors. Because the cavity length exceeds that of planar resonators considerably too one has to guarantee that the overwhelming part of the resonator is essentially transparent for the guided mode. This has of course the consequence that it does not contribute to any resonant nonlinear effect. Hence we propose a resonator that is only loaded by a thin layer of nonlinear but absorbing material (GaAs) in the cavity region (see Fig.1).
Previously reported observations of optical bistability in a GaAs/GaAlAs waveguide cavity included whole-sample thermally induced absorptive and refractive bistability [1] and localised (μs) thermally induced absorptive bistability [2]. Other groups have observed refractive bistability due to an optoelectronic mechanism in MQW GaAs/GaAlAs waveguides [3,4]. In this paper we report the observation of bistability due to thermally induced changes in leaky modes within a GaAs/GaAlAs waveguide and discuss the optimisation of optoelectronic nonlinearities in semiconductor guides of this type. A leaky planar waveguide consists of a low index layer bounded by two higher index layers. These exhibit radiative losses, where for the nth order mode the attenuation coefficient is proportional to (n+1)2 [5]. In this investigation the waveguides used were short enough to allow good transmission of the lower order modes.
All-optical switching phenomena within a waveguide configuration are of considerable interest for routing and signal processing applications in communications systems. Two classes of device can be identified: those dependent on non-resonant ultrafast nonlinearities, capable of switching at the data-rate of ultra-high frequency signals; and those exploiting the much lower power resonant nonlinear phenomena which, due to their slower (> 100ps) response, are suitable as data-transparent switches capable of opening or closing the desired channels within a network under optical control.
Two segment devices for optical bistability have been studied extensively but in almost all these cases the switching process is essentially absorption dominated e.g. [1]. In contrast, a particularly interesting new mode of operation from the same device results if a coherent optical signal, placed fairly near to a Fabry-Perot (F-P) resonance of the device, is injected at the initially un-pumped end of the structure. As the intensity of the input signal is increased the unpumped region changes towards transparency thus causing the F-P resonance to ‘sharpen up’ and move with respect to the input signal wavelength. Under suitable conditions highly non-linear amplification of the signal (switching) occurs which can produce at the output a very much altered signal shape than at the input. In this mode of operation the device has potential application as signal pulse re-generators in coherent optical communication systems.
Nonlinear semiconductor waveguides are investigated with respect to their use for optical bistability and temporal optical switching with results given for silicon-on-sapphire devices. The performance of the waveguides is assessed with comparisons to nonlinear Fabry-Perot cavities, and the conditions for optical bistability are theoretically shown to be possible by combining a waveguide and a diffraction-grating coupler. Structures experimentally investigated include semiconductor layers epitaxially grown on substrates having low refractive indices. Optical switching is reported on reflected or transmitted beams and on the guided-wave intensity by means of excitation pulses in the nanosecond or picosecond range. The data confirm the usefulness of nonlinear waveguides as alternative devices for temporal optical switching and logic-gate development in part due to their good switching times.
Bistability of an optical resonator with distributed Bragg-reflectors is analyzed by using the coupled-mode theory. Hysteresis and nonlinear properties are given as a function of the quantities characterizing the Kerr medium (the quadratic electrooptic coefficient n 2 and the length of the Kerr medium l ) and the propagation characteristics of the corrugated waveguide (the coupling coefficient k and the optical loss in the corrugated waveguide Γ). We show that the optical resonator with distributed Bragg-reflectors has a multi-valued transmission characteristic by the Kerr effect. From the numerical calculations, the up-switching and down-switching power intensities of bistable operation are estimated.