We demonstrate an electrically-pumped laser-integrated quantum light source of two and high-dimensional entangled photons. Our hybrid InP-Si3N4 source is fully-integrated, compact, and field-deployable, bringing the required scalability to photonic quantum processing.
Integrated quantum photonics can realize and process optical entangled quantum states in highly compact, robust, and scalable chips thereby enabling chip scale implementations of long-distance quantum-secured communication, quantum-accelerated information processing, and non-classical metrology [1]. Notably, all previous on-chip entangled quantum photonic sources have relied on an external laser to excite nonlinear parametric processes, thereby making these systems overall non-reproducible, bulky, impractical, and thus unsuitable for out-of-lab use as well as production at large scale [2]. To date, the major challenge inhibiting a fully on-chip quantum light system is to integrate a stable, tunable laser together with a high rejection filter that eliminates laser sideband noise [3], [4] and a nonlinear parametric source of entangled photons. Fig. 1 A) laser-integrated photonic quantum light source of frequency-bin entangled photon states: an electrically pumped inp gain-section, i.e. A reflective semiconductor optical amplifier (rsoa) providing optical gain, is coupled to a si3n4 chip containing a three microring resonator (r1, r2, and r3) vernier filter and a mach-zehnder interferometer (mzi) with a sagnac loop mirror. B) measurements utilizing single photon detectors allowed to determine an smsr≈ 112 db, and an ase suppression of> 56 db. C) car for respective frequency pairs for an excitation power of 3.9 mw. D) density matrices of two-dimensional (qubit) and three-dimensional (qutrit) frequency-bin entangled states reconstructed via quantum state tomography (qst).
Abstract Integrated photonics has recently become a leading platform for the realization and processing of optical entangled quantum states in compact, robust, and scalable chip formats with applications in long-distance quantum-secured communication, quantum-accelerated information processing, and non-classical metrology. However, the quantum light sources developed so far have relied on external bulky excitation lasers making them impractical, not reproducible prototype devices, hindering scalability and the transfer out of the lab into real-world applications. Here we demonstrate a fully integrated quantum light source, which overcomes these challenges through the combined integration of a laser cavity, a highly efficient tunable noise suppression filter (> 55 dB) exploiting the Vernier effect, and a nonlinear microring for entangled photon pair generation through spontaneous four-wave mixing. The hybrid quantum source employs an electrically-pumped InP gain section and a Si₃N₄ low-loss microring filter system and demonstrates high-performance parameters, i.e., a pair emission over four resonant modes in the telecom band (bandwidth ∼ 1 THz), and a remarkable pair detection rate of ∼ 620 Hz at a high coincidence-to-accidental ratio of ∼80. The source directly creates high-dimensional frequency-bin entangled quantum states (qubits/qudits), verified by quantum interference measurements with visibilities up to 96% (violating Bell-inequality) and by density matrix reconstruction through state tomography showing fidelities of up to 99%. Our approach, leveraging a hybrid photonic platform, enables commercial-viable, low-cost, compact, light-weight, and field-deployable entangled quantum sources, quintessential for practical, out-of-lab applications, e.g., in quantum processors and quantum satellite communications systems.
Abstract High-dimensional quantum entanglement is an important resource for emerging quantum technologies such as quantum communication and quantum computation. The scalability of metres-long experimental setups limits high-dimensional entanglement in bulk optics. Advancements in quantum technology hinge on reproducible, and reconfigurable quantum devices—including photon sources, which are challenging to achieve in a scalable manner using bulk optics. Advances in nanotechnology and CMOS-compatible integration techniques have enabled the generation of entangled photons on millimeter-scale chips, significantly enhancing scalability, stability, replicability, and miniaturization for real-world quantum applications. In recent years we have seen several chip-scale demonstrations with different discrete degrees of freedom including path, frequency-bin, time-bin, and transverse modes, on many material platforms. A complete quantum photonic integrated circuit requires the generation, manipulation, and detection of quantum states, involving various active and passive quantum photonic components which further increase the degree of complexity. Here, we focus on the high-dimensional versions of qubits—qudits—and review the nonlinear optical processes that facilitate on-chip high-dimensional entangled photon sources, and the currently used material platforms. We discuss a range of current implementations of on-chip high-dimensional entangled photon sources and demonstrated applications. We comment on the current challenges due to the limitations of individual material platforms and present future opportunities in hybrid and heterogeneous integration strategies for the next generation of integrated quantum photonic chips.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/silicon quantum photonic device combining the strong second-order nonlinearity and direct band gap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al Ga As source and their vertical routing to an adhesively bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband ( > 40 nm) telecom photons by type-0 and type-2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10 5 s − 1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5-nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on chip, within a hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies. Published by the American Physical Society 2024