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IEEE International Semiconductor Laser Conference (ISLC)

Polarization Switching in VCSELs Subject to Current Modulation for Quantum Random Number Generation

Marcos Valle-Miñón, Ana Quirce, Angel Valle A, Jaime Gutiérrez

Published Oct 16, 2022• 0 citations
Publisher

Abstract

We report an experimental study of the excitation of the linearly polarized modes of a gain-switched VCSEL in order to obtain random bits. The generated bit strings pass all tests in the standard test suite for random number generators provided by NIST.
DOI
10.23919/islc52947.2022.9943461

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We report a characterization of the polarization fluctuations observed when gain-switching vertical-cavity surface-emitting lasers (VCSELs) for quantum random number generation (QRNG) applications. We compare our experimental measurements with the results obtained from a stochastic rate equations model that incorporates the intrinsic parameters of the VCSEL found using the state-of-the-art experimental techniques. The good agreement obtained between our experiments and simulations can be used to establish a validation process that permits to monitor the device behaviour to detect malicious intrusion or malfunctioning of the QRNG. Simulations of the model are used to look for parameters that maximize the QRNG performance. Along this direction we consider the performance when considering a VCSEL with vanishing values of the amplitude and phase anisotropies. We show that in this system the obtained raw bits have a low bias value that is independent on the sampling time chosen to obtain the random bit and on the parameters of the modulation. We also use the simulations of the model to predict the QRNG performance at high modulation frequencies. We show that random bits obtained at several Gbps rates, after appropriate post-processing, fully pass the NIST statistical test.
We report a characterization of the polarization fluctuations observed when gain-switching vertical-cavity surface-emitting lasers (VCSELs) for quantum random number generation (QRNG) applications. We compare our experimental measurements with the results obtained from a stochastic rate equations model that incorporates the intrinsic parameters of the VCSEL found using the state-of-the-art experimental techniques. The good agreement obtained between our experiments and simulations can be used to establish a validation process that permits monitoring of the device behavior to detect malicious intrusion or malfunctioning of the QRNG. Simulations of the model are used to look for parameters that maximize the QRNG performance. Along this direction we consider the performance when considering a VCSEL with vanishing values of the amplitude and phase anisotropies. We show that in this system the obtained raw bits have a low bias value that is independent of the sampling time chosen to obtain the random bit and of the parameters of the modulation. We also use the simulations of the model to predict the QRNG performance at high modulation frequencies. We show that random bits obtained at several Gbps rates, after appropriate post-processing, fully pass the NIST statistical test.
We report an experimental study of the effect of the temperature of the VCSEL on the probability of excitation of a linearly polarized mode when gain-switching the device. We consider different modulation frequencies and amplitudes. We show that the probability of excitation of a linearly polarized mode significantly changes with the value of the temperature of the device. We also show that for low values of the temperature the probability of excitation saturates to a constant value as the amplitude of the modulation increases. This extends our previous results obtained at larger temperatures for which that saturation was not observed. We identify situations in which the distributions of the linearly polarized signals at a sampling time are approximately uniform. For these cases we evaluate the quality of the random numbers by using statistical test.