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Chip

Feasibility of chipscale integration of single-photon switched digital loop buffer

Xiaoxi Wang, Shayan Mookherjea

Published Oct 13, 2022• 3 citations
Publisher

Abstract

A strategy for realizing a microchip-scale single-photon digital loop buffer controlled by low-voltage electronic signals was studied in the context of integrated photonics. A potential implementation for bridging a gap between other technologies used a recirculating loop architecture based on advances in low-loss passive waveguides and a fast electro-optic add-drop switch. Although the requirements of single-photon buffers are demanding, our analysis suggested that a voltage-controlled, room-temperature catch-and-store short-term quantum memory for light on a chip may be feasible in certain regimes.

DOI
10.1016/j.chip.2022.100028

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A strategy for realizing a microchip-scale single-photon digital loop buffer controlled by low-voltage electronic signals was studied in the context of integrated photonics. A potential implementation for bridging a gap between other technologies used a recirculating loop architecture based on advances in low-loss passive waveguides and a fast electro-optic add-drop switch. Although the requirements of single-photon buffers are demanding, our analysis suggested that a voltage-controlled, room-temperature catch-and-store short-term quantum memory for light on a chip may be feasible in certain regimes.
Parametric sources in quantum optics usually require some form of spectro-temporal control for conditional generation of high-purity single-photon states, but their properties have not yet been optimized using integrated microchips. Using external short-pulse lasers and separate devices for pump preparation and for photon generation, as is traditional, incurs many impediments such as reduced performance, increased loss, high cost, and limited scalability. To overcome these limitations, here we demonstrate a circuit including high-bandwidth, high-extinction ratio electro-optic modulators for pump-pulse preparation fully integrated with high-quality factor ( Q ) microresonators for efficient parametric nonlinearity, together with seamlessly interconnecting waveguides. The microchip uses different optical materials on a common platform and a multi-layer integrated photonic architecture. Using this, we control the joint spectrum of room-temperature biphoton generation for the first time on a single integrated microchip, and demonstrate that the theoretical purity bound can be achieved.
Integrated quantum optical circuits are now seen as one of the most promising approaches with which to realize single-photon quantum information processing. Many of the core elements for such circuits have been realized, including sources, gates and detectors. However, a significant missing function necessary for photonic quantum information processing on-chip is a buffer, where single photons are stored for a short period of time to facilitate circuit synchronization. Here we report an on-chip single-photon buffer based on coupled resonator optical waveguides (CROW) consisting of 400 high-Q photonic crystal line-defect nanocavities. By using the CROW, a pulsed single photon is successfully buffered for 150 ps with 50-ps tunability while maintaining its non-classical properties. Furthermore, we show that our buffer preserves entanglement by storing and retrieving one photon from a time-bin entangled state. This is a significant step towards an all-optical integrated quantum information processor.
Quantum-based communication systems can potentially achieve the ultimate security from eavesdropping and greatly reduce the operating powers on chip. Light-speed transmission, noise immunity, and low noise properties make photons indispensable for quantum communication to transfer a quantum state through a transmission line. Furthermore, the field of silicon nanophotonics is fast growing field which is driven by the attractive and promising improvements it has to offer in high speed communication systems and on chip optical interconnects. Consequently, there is a high demand to develop the building blocks for photon manipulation in silicon nanophotonic circuits. The goal of the work is to enable high performance optoelectronic computing and communication systems that overcome the barriers of electronics and dramatically enhance the performance of circuits and systems. We will focus our attention on solving some of the issues with the current systems regarding photon storage, routing, isolation, switching, and energy conversion. We realize a continuously tunable optical memory which breaks the time-bandwidth limit by more than thirty times. This enabled the storage of ultra-short pulses of light for hundreds of picoseconds. Also, we investigate on-chip photon scattering when transmitted through micro-scale optical cavities. In addition, we develop novel dynamic quantum mechanical models that predict quantum-like behavior of single and multi-photon wavepackets. Furthermore, we report for the first time that efficient red shifts in silicon are achievable with free carrier injection which generally produces blue wavelength shifts. We realize adiabatic wavelength conversion and discrete photonic transitions of single photons in silicon cavities. Moreover, we demonstrate a basic quantum network on chip with an on-chip photon source. We present a novel design for CMOS compatible optical isolator on silicon chip using a system of active cavities. And finally, we analyze a novel ultra-fast broadband modulator in silicon based on free-carrier absorption effect in SOI waveguides integrated with Schottky diodes.
A high-speed, low-loss modular cross-bar switching element suitable for single photons is demonstrated. Entanglement preserving voltage-driven switching of single photons is achieved with a unique combination of ultra-fast and low-loss characteristics (less than 50 ps 10%–90% transition time and greater than 90% transmission), and we present a roadmap towards even lower losses. The switch properties are well matched to the wavelength, bandwidth and lifetime of photons generated by spontaneous four-wave mixing sources also realized in silicon photonics. Such a switch can enable reconfigurability of each single photon and addressing of each time bin, and benefit future quantum photonic circuits.
Recent progress in the field of quantum information processing has highlighted the prospects of using integrated optical devices for quantum applications. Integrated quantum photonics offers several advantages compared to free-space setups. Not only the miniaturization, which dramatically reduces the size of the building blocks and allows imprinting or cascading several functions on a single substrate, but also the possibility to reproduce the same photonic circuit many times on the same chip. For instance, this has been exploited to spatially multiplex heralded single-photon, leading to an increase of the single-photon emission rate at constant noise level. More strikingly, one can think of combining, on-chip, several synchronised single photon sources towards engineering large photon-number entangled states. Despite this attractive potential, only few examples of spatial mul- tiplexing have been reported in the literature due to the technological challenge related to fabrication processes. On one hand, lithium nio- bate (LN) is very suitable for quantum integrated photonics since it shows both optic-optic and electro-optic non-linearities, as well as the possibility to integrate low-loss waveguides. However, several parallel and/or cascaded optical functions require various lithographic steps leading to reduced yields. On the other hand, femto-second laser direct-writing (FLDW) technique on glass-type substrates, allows fast fabrication of low-loss waveguide circuits requiring no lithographic masks nor chemical exchange. However, no efficient non-linear processes are available in SiO2 waveguides for photon-pair generation. We discuss here an integrated photonic chip able to generate photon-number states which consists of three photonic chips fabricated on either LN for photon generation or on SiO2 substrates for photon manipulation purposes. Our approach takes advantage of the best features of both worlds.