Finite gate errors limit performance of modern quantum computers. In this work, we study single qubit gate fidelities for trapped ions. For this we have numerically solved Schrödinger equation using full Hamiltonian of the system for one, two, three and four ions. This approach allows us to analyze gate errors beyond the LambDicke approximation and to take into account not only a finite occupation of the phonon modes, but also the effects related to the ion–phonon entanglement. As a result, we show how infidelity of the global single qubit gates depend on the initial phonon mode occupations, the Lamb–Dicke parameter, Rabi frequency and the number of ions.
Finite gate errors limit performance of modern quantum computers. In this work, we study single qubit gate fidelities for trapped ions. For this we have numerically solved Schrödinger equation using full Hamiltonian of the system for one, two, three and four ions. This approach allows us to analyze gate errors beyond the LambDicke approximation and to take into account not only a finite occupation of the phonon modes, but also the effects related to the ion–phonon entanglement. As a result, we show how infidelity of the global single qubit gates depend on the initial phonon mode occupations, the Lamb–Dicke parameter, Rabi frequency and the number of ions.
In this work, we derive analytic formulas that determine the effect of error mechanisms on one- and two-qubit gates in trapped ions and electrons. First, we analyze and derive expressions for the effect of driving field inhomogeneities on one-qubit gate fidelities. Second, we derive expressions for two-qubit gate errors, including static motional frequency shifts, trap anharmonicities, field inhomogeneities, heating, and motional dephasing. We show that, for small errors, each of our expressions for infidelity converges to its respective numerical simulation; this shows that our formulas are sufficient for determining error budgets for high-fidelity gates, obviating numerical simulations in future projects. All of the derivations are general to any internal qubit state, and any mixed state of the ion crystal's motion that is diagonal in the Fock state basis. Our treatment of static motional frequency shifts, trap anharmonicities, heating, and motional dephasing apply to both laser-based and laser-free gates, while our treatment of field inhomogeneities applies to laser-free systems.
Abstract We propose and study ways speeding up of the entangling operations in the trapped ions system with high fidelity. First, we find a scheme to increase the speed of a two-qubit gate without the limitation of trap frequency, which was considered as the fundamental limit. Second, we study the fast gate scheme for entangling more than two qubits simultaneously. We apply the method of applying multiple frequency components on laser beams for the gate operations. In particular, in order to avoid infinite terms from the coupling to carrier transition, we focus on the phase-insensitive gate scheme here. We carefully study the effect of large excitation of motional mode beyond the limit of Lamb–Dicke approximation by including up to second order terms of the Lamb–Dicke parameter. We study the speed limit of multi-qubit global entangling gates without individual addressing requirements. Furthermore, our gates can be made insensitive to the fluctuation of initial motional phases which are difficult to stabilise in the phase-insensitive gate scheme.
Trapped ions are one of the most promising systems to implement quantum computations. In fact, there seems to be no fundamental obstacle to scale-up existing set-ups [1,2]. This is achieved by moving the ions without affecting their internal state, something that has been successfully demonstrated. The current limitations of trapped ions lie in the performance of the two--qubit quantum gates which are required for universal quantum computations. In particular, the time required to perform a gate is limited by the frequency of the trap holding the ions, something which cannot be increased arbitrarily. In this work [3] we show that such a time limitation is by no means fundamental. In fact, we propose a new concept of quantum gate which is not limited by the trap frequency, is completely independent of the temperature (even beyond the Lamb-Dicke limit), and requires no addressability. We also analyze the performance of quantum gates based on this new scheme.
Quantum controlled-NOT (CNOT) gates with single trapped cold ions have been experimentally demonstrated [C. Monroe et al., Phys. Rev. Lett. 75, 4714 (1995)] by using auxiliary atomic levels (besides the qubit ones) and under the usual Lamb-Dicke (LD) limit (wherein the so-called LD parameter, which represents the interaction strength between the internal and external degrees of freedom of the driven ion, is required to be sufficiently small). It has been shown [C. Monroe et al., Phys. Rev. A 55, R2489 (1997); L. F. Wei et al., 65, 062316 (2002)] that, beyond the LD limit, these gates could also be implemented for certain specific LD parameters. Here, we further show that, without any auxiliary atomic level, the desirable quantum logic gates could still be realized with sufficiently high fidelities for arbitrary LD parameters, as long as the durations of the applied laser pulses are accurately set within the decoherence times of the ions.
Abstract Trapped-ion has shown great advantages in building quantum computers. While high fidelity entangling-gate has been realized for a few ions, how to maintain the high fidelity for large scale trapped-ions remains an open problem. Here, we present an analysis of arbitrary scale ion chains and focus on motional-related errors, reported as one of the leading error sources in state-of-the-art experiments. We theoretically analyze two-qubit entangling-gate infidelity in a large ion crystal under the phase insensitive configuration. To verify our result, we develop an efficient numerical simulation algorithm that avoids exponential increases in of the Hilbert space dimension. For the motional heating error, we derive a much tighter bound of gate infidelity than previously estimated O ( N Γ τ ) , and we give an intuitive understanding from the trajectories in the phase space of motional modes. Our discoveries may inspire the scheme of pulse design against incoherent errors and shed light on the way toward constructing scalable quantum computers with large ion crystals.
Ion trap is one of the most promising candidates for quantum computing. High-fidelity gates have been demonstrated in small ion crystals and schemes like ion shuttling have been proposed for larger systems. This thesis discusses the possibility of direct quantum computing on a large ion crystal in a Paul trap, without any shuttling of the ions. We first review a scheme to entangle two ions in a small ion crystal mediated by the collective phonon modes and analyze the gate errors. The generalization to larger systems is divided into three parts. (1) We present numerical methods to solve all the normal modes of the ion crystal, including the micromotion, up to arbitrary precision. The stability of the crystal under infinitesimal perturbation is ensured when all the normal modes have real frequencies. For finite disturbance, direct molecular dynamics simulation will be needed; after discussing some potential problems in the simulation, we give a rule of thumb for the ion crystal to be stable at a given temperature. (2) We show that when designing an entangling gate between two nearby ions, all the ions far away can be neglected, so that only a small number of normal modes are relevant. Similarly, distant entangling gates can be applied in parallel and the crosstalk is shown to decay cubically with the distance between these gates. (3) Then we present numerical methods to include the solved micromotion into the design of the entangling gates efficiently, again up to arbitrary precision. Thus we conclude that the design and the implementing of entangling gates are scalable in a large ion crystal. Finally we consider a near-term application to simulate an all-to-all coupled Ising model in a small to medium-sized ion crystal.