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Investigation on Nonlinear Optical Properties of Symmetric and Asymmetric Double V-Shaped Potential Wells with Structural Parameters and External Electromagnetic Fields

Aysevil Salman Durmuşlar

Published Oct 7, 2022• 0 citations
Publisher

Abstract

Abstract Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.

DOI
10.21203/rs.3.rs-2100012/v1

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Abstract Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.
Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure have been theoretically investigated. Responses of these coefficients to well widths, barrier widths and aluminium concentrations within the barrier as well as applied external electromagnetic fields were the subject of this study. The electronic spectra of the structures are obtained as a solution to the Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated by the analytical expressions obtained by iterative solutions within the compact density matrix approach. Although increasing barrier width and aluminium concentration act similarly significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths act differently for each configuration. Strengthening electric and magnetic fields shift the resonance peaks to blue for both symmetric and asymmetric wells. The results show that optical properties can be controlled by structural parameters, external probes and asymmetry of double V-shaped wells.
In this work, the effects of the structure parameters, such as the central barrier thickness and the aluminium concentrations x, on the linear and nonlinear intersubband optical absorption coefficients and refractive index changes of the asymmetric double-graded quantum wells (ADGQWs) under the presence of an external static electric field are studied theoretically. The nonlinear optical properties of the ADGQWs are obtained using the compact-density matrix approach and iterative method. The numerical results obtained from the present work show that the external static electric field and the structure parameters play an important role in the optical properties of ADGQWs. Depending on the asymmetric nature of the confinement potential, in an electric field of kV/cm, the overlap between electronic wave functions decreases with increasing field whereas it increases for larger field values. The tunability of intersubband transitions can be applied to optical modulators and various device applications based on the optical transitions of electrons.
Abstract In our investigation, we analyzed the variations in both linear and nonlinear optical properties of the GaAs/GaAlAs single quantum well heterostructure with modified Lennard-Jones potential under the conditions where external fields and the adjustable physical parameters of the structure are changed. We get the solution of the Schrödinger equation for identifying the subband energy levels with their wave functions taking advantage of the diagonalization method, effective mass approach, and parabolic band model. As a result, we find that the changes in the applied external fields and structure parameters have effects on the total optical absorption coefficients and total relative refractive index changes. While the optical response becomes red-shifted with the increment of applied electric, magnetic and intense laser fields and the well width, it becomes blue-shifted with the increment of the well depth.
In this study, the effects of the external fields (electric and tilted magnetic fields) and well parameters on the optical absorption coefficients in GaAs/GaAlAs multiple (five) quantum wells under the applied electric and tilted magnetic fields has been investigated theoretically. Firstly, the energy eigenvalues and eigen functions of an electron confined in multiple quantum wells are calculated by analytically from Schrödinger equation using the transfer matrix method within the effective mass approximation, Secondly, the linear, nonlinear and total intersubband optical absorptions in GaAs/GaAlAs multiple quantum wells system are studied within the compact density-matrix approach. It is shown that the parameters such as strenghts of the external fields and θ-tilted angle values not only shift the peak positions in absorption spectrum but also considerably modify their potential heights. In generally, electronic and optical properties of the quantum wells are very sensitive to the applied external fields and well parameters. Therefore, we can conclude that the effect of the external fields can be used to tune and control the optical properties of interest in the range of the far-infrared electromagnetic spectrum.
Abstract In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.
Optical properties of quantum well nanostructure for typical GaAs/AlxGa1-xAs are investigated in a new approach. By using the point canonical transformation method and numerical solution of the Schrödinger equation, the energy levels and wave functions of electrons in the quantum well confinement potential are calculated. Then, the effect of position-dependent effective mass on the intersubband optical absorption coefficient and the refractive index changes of the quantum well calculated by compact density matrix method, are studied. Results are compared with the case of constant mass. Our results show that with considering spatially varying electron effective mass linear and nonlinear optical properties increases and shifts toward the lower energies. Researches on this matter open a new field in fundamental and applied physics, and also offer a wide range of potential applications for photonic devices.