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Conference on Lasers and Electro-Optics

Cavity-enhanced emission from an ensemble of color centers in silicon

Carlos Errando-Herranz, Connor Gerlach, Lorenzo De Santis, Christopher Panuski, Mihika Prabhu, Hamza Raniwala, Ian Christen, Dirk Englund

Published Jan 1, 2022• 0 citations
Publisher

Abstract

Optical quantum technologies require strong light-matter interaction. We couple silicon color center ensembles to high-Q/V cavities and show enhanced emission in the telecommunications O-band.
DOI
10.1364/cleo_qels.2022.fw5f.4

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Monolithic integration of single-photon sources into silicon photonics offers a compelling solution for realizing scalable quantum telecommunication architectures. Among the candidate silicon color centers, the C-center features a zero-phonon emission in the telecom L-band, corresponding to the spectral window of minimum transmission loss in optical fibers. Despite this advantage, isolating single C-centers has remained an unrealized challenge in solid-state quantum optics. In this work, we report the isolation of a single silicon C-center. We enhance the spontaneous emission rate of the zero-phonon line by coupling the single emitter to a nanophotonic crystal cavity, observing a fivefold reduction in the excited-state lifetime compared to bulk conditions, which corresponds to a Purcell factor lower bound of 33. Second-order autocorrelation measurements confirm single-photon emission from the investigated defect, obtaining an optical purity of g(2)(0)=0.23g^{(2)}(0) = 0.23g(2)(0)=0.23 without background correction. Our results establish a native telecom L-band quantum light source in silicon, laying the foundation for ultra-low-loss and long-distance quantum applications.