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Quantum and Classical Control of Ions in Sandia's HOA Trap.

Daniel Lobser

Published Aug 22, 2018• 0 citations
OpenAlex

Abstract

Trapped-ion quantum information experiments have reached ion numbers where precise control of multiple ion chains is necessary, resulting in a growing need for high-performance microfabricated surface traps.With Sandia's High Optical Access (HOA) trap, which boasts high trap frequencies and long trapping times, we have achieved the first single-qubit gates with a diamond norm below a rigorous fault tolerance threshold [1,2], and a two-qubit Mølmer-Sørensen gate [3] with a process fidelity of 99.58(6).We also demonstrate novel control techniques, afforded by precise manipulation over the curvature of the trapping potential, that support continuous rotation of principal axes while maintaining constant secular frequencies.

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Trapped-ion quantum information experiments have reached ion numbers where precise control of multiple ion chains is necessary, resulting in a growing need for high-performance microfabricated surface traps.With Sandia's High Optical Access (HOA) trap, which boasts high trap frequencies and long trapping times, we have achieved the first single-qubit gates with a diamond norm below a rigorous fault tolerance threshold [1,2], and a two-qubit Mølmer-Sørensen gate [3] with a process fidelity of 99.58(6).We also demonstrate novel control techniques, afforded by precise manipulation over the curvature of the trapping potential, that support continuous rotation of principal axes while maintaining constant secular frequencies.
Trapped ions are among the top candidates for realizing high fidelity gate operations for quantum computation as well as other applications including quantum simulation and sensing [1]. However, scaling these systems up to the number of qubits required to solve interesting problems with conventional macroscopic traps quickly becomes intractable. To overcome the scalability challenge, advanced microfabrication techniques have been developed to support a variety of complex electrode layouts, allowing for precise and dynamic control of confining potentials. Using Sandia’s microfabricated surface ion traps, which feature low heating rates, high trap frequencies, and long trapping times, we demonstrate novel classical control techniques that employ parametric voltage solutions for elegant composition of shuttling operations and accurate control over the curvature of the confining potential. To demonstrate the viability of Sandia's microfabricated ion traps for quantum information processing, we’ve realized of high-fidelity single-qubit gates below a rigorous fault tolerance threshold for general noise [2,3] and two-qubit Mølmer-Sørensen gates with a process fidelity of 99.58(6)%.
Single--ion qubits confined to microfabricated surface traps boast numerous advantages for a scalable quantum computer.The flexibility of modern chip traps supports a variety of exo>c trapping geometries and unprecedented control over individual qubits.Since their incep>on, the viability of chip traps has been met with skep>cism owing to the fact that hea>ng rates would presumably be dominated by surface interac>ons, which play a larger role as a result of the trap's close proximity to the ions.In order to debunk this misconcep>on, we report on the realiza>on of high--fidelity quantum informa>on processing protocols in Sandia's High--Op>cal--Access (HOA) surface trap.Through a number of technical improvements, such as driK control of classical control parameters and our development of a novel "gapless" pulse technique, we have achieved single--qubit gate fideli>es, both laser--and microwave--based, comparable to those found in the best--of--breed electrode traps.Gate Set Tomography (GST) provides an extremely accurate characteriza>on of our gates, including concrete measurements of diamond norm distances.We also demonstrate a realiza>on of the Mølmer--Sørensen two--qubit gate that is stable for several hours.By virtue of this stability, we've performed the first GST measurements in a qutrit basis, which have yielded a two--qubit process fidelity of 99.58( 6)%.Microfabricated Traps at Sandia High Op>cal Access Trap (HOA--2) Single--Qubit Gates Two--Qubit Gate Gate Set Tomography 0 1 0.2 0.
Surface electrode ion traps offer a clear advantage in quantum information over traditional 4-rod traps by enabling the precise control necessary for manipulating a long chain of ions. At Sandia, we use CMOS compatible fabrication techniques to make these devices more complex and repeatable; a likely necessity when building quantum systems with hundreds or thousands of ions. These techniques grant us access to unique integration capabilities, through which we aim to continuously improve the state-of-the-art of surface ion traps. I will share some examples of our capabilities and recent work on our Phoenix and Peregrine traps which aim to improve the reliability and performance of previous designs. ----------------------- Sandia National Labs is managed and operated by NTESS LLC, a subsidiary of Honeywell International, Inc., for the U.S. DOE's NNSA under contract DE-NA0003525. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government.
Scaling trapped ion quantum information processing to large numbers of qubits relies on micro-fabricated traps optimized for the applications in quantum computing and quantum simulation.High trap frequencies and excellent optical access are the key features necessary for quantum information processing that are realized in Sandia's bowtie shaped High Optical Access trap.For quantum simulations long equidistant chains of ions, and ring-shaped crystals are of interest.Here, we demonstrate a chain of approximately 350 ions in a highly symmetric ring trap. Ring Trap10 mm Motivation • Large equidistant ion crystal • RF potential is sufficient to trap ion chain • Periodic boundary conditions • Possible applications: • phase transitions (E.
Current classical computing methods are unable to simulate quantum many-body interactions efficiently.Analog quantum simulators with even small numbers of quantum degrees of freedom are expected to enable the investigation of systems not fully accessible in traditional computing such as condensed-matter systems, quantum chemistry, and material science.Two-dimensional lattices of trapped ions are a good candidate to realize an analog quantum simulator for their addressability, individual control and individual detection.Here, we report on multiple unique lattice surface ion trap designs, microfabricated at Sandia National Laboratories, capable of trapping and interacting up to 4 ions.Ions are held in close proximity in individual all radio-frequency potential minima and interact via their Coulomb repulsion.The Coulomb coupling between ions allows for simulation of spin-spin interactions 1-6 .Control electrodes of the trap can be used to adjust principal axes of the ion's motion and thus enable individual control over the interaction between ions.The lattice trap array architecture tested in this work can be scaled to larger two-dimensional lattices of trapped ions.
The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times, high qubit readout fidelity, and universal logic gates. While these essential properties have been demonstrated, the ability to scale a trapped ion quantum system has not yet been shown. The challenge of scaling the system calls for methods to realize high-fidelity logic gates in scalable trap structures. Surface electrode ion traps, that are microfabricated from a silicon substrate, provide a scalable platform for trapping ion qubits only if high-fidelity operations are achievable in these structures. Here, we present a system for trapping and manipulating ions in a scalable surface trap. Trapping times exceeding 20 minutes without laser cooling, and heating rates as low as 0.8 quanta/ms indicate stable trapping conditions in these microtraps. Coherence times of more than one second verify adequate qubit and control field stability. We demonstrate low-error single-qubit gates performed using stimulated Raman transitions driven by lasers that are tightly focused on the ion qubit. Digital feedback loops are implemented to control the driving field's amplitude and frequency. Gate errors are measured using a randomized benchmarking protocol for single qubit gates, where residual amplitude error in the control beam is compensated using various pulse sequence techniques. Using pulse compensation, we demonstrate single qubit gates with an average error per randomized Clifford group gate of 3.6(3)times10−43.6(3)\\times10^{-4}3.6(3)times10−4, which is below the fault-tolerant threshold for some error-correction schemes.