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Nature Computational Science

Bridging the gap between density functional theory and quantum materials

Alex Zunger

Published Sep 26, 2022• 23 citations
Publisher
DOI
10.1038/s43588-022-00323-z

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The workhorse method of computational materials science is undeniably density functional theory in the Kohn-Sham framework of approximate exchange and correlation energy functionals. However, the need for highly accurate predictions of ground and excited state properties in materials science motivates the further development and exploration of alternative as well as complementary techniques. Among these alternative approaches, quantum chemical wavefunction based theories and in particular coupled cluster theory hold the promise to fill a gap in the toolbox of computational materials scientists. Coupled cluster (CC) theory provides a compelling framework of approximate infinite-order perturbation theory in the form of an exponential of cluster operators describing the true quantum many-body effects of the electronic wave function at a computational cost that, despite being significantly more expensive than DFT, scales polynomially with system size. The hierarchy of size-extensive approximate methods established in the framework of CC theory achieves systematic improvability for many materials properties. This is in contrast to currently available density functionals that often suffer from uncontrolled approximations that limit the accuracy in the prediction of materials properties. In this tutorial-style review we will introduce basic concepts of coupled cluster theory and recent developments that increase its computational efficiency for calculations of molecules, solids and materials in general. We will touch upon the connection between coupled cluster theory and the random-phase approximation to bridge the gap between traditional quantum chemistry and many-body Green’s function theories that are widely-used in the field of solid state physics. We will discuss various approaches to improve the computational performance without compromising accuracy. These approaches include large-scale parallel design as well as techniques that reduce the prefactor of the computational complexity. A central part of this article discusses the convergence of calculated properties to the thermodynamic limit which is of significant importance for reliable predictions of materials properties and constitutes an additional challenge compared to calculations of large molecules. Furthermore we mention technical aspects of computer code implementations of periodic coupled cluster theories in different numerical frameworks of the one-electron orbital basis; the projector-augmented-wave formalism using a plane wave basis set and the numeric atom-centered-orbital with resolution-of-identity.
Identifying scalable materials systems that exhibit quantum behavior is a central challenge in quantum information science. Point defects in certain wide-bandgap semiconductors are promising in this regard due to the maturity of semiconductor manufacturing and ion implantation technology. Single erbium defect centers in 4H-SiC are examples of such defects that provide access to discrete defect-induced electron energy levels within the bulk material bandgap, which can be utilized for a variety of quantum technologies, such as single-photon emission for secure communication and distributed quantum computing. This work presents a first-principles study of erbium point defects in 4H-SiC using density functional theory. These results provide materials-level support for the development of Er point defects in 4H-SiC as a scalable platform for quantum devices, helping to bridge the gap between quantum physics and the practical realization of quantum networks.