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Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology

Mathilde Brocheton, M. Lazar

Published Oct 24, 2021• 0 citations
OpenAlex

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This review provides an overview of defects in silicon carbide (SiC) with potential applications as quantum qubits. It begins with a brief introduction to quantum qubits and existing qubit platforms, outlining the essential criteria a defect must meet to function as a viable qubit. The focus then shifts to the most promising defects in SiC, notably the silicon vacancy (VSi) and divacancy (VC-VSi). A key challenge in utilizing these defects for quantum applications is their precise and controllable creation. Various fabrication techniques, including irradiation, ion implantation, femtosecond laser processing, and focused ion beam methods, have been explored to create these defects. Designed as a beginner-friendly resource, this review aims to support early-career experimental researchers entering the field of SiC-related quantum qubits. Providing an introduction to defect-based qubits in SiC offers valuable insights into fabrication strategies, recent progress, and the challenges that lie ahead.

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Optically addressable paramagnetic defects in silicon carbide (SiC) are attractive for scalable quantum technologies such as quantum sensing. PL5, PL6, and PL7 are promising defects for their high brightness and spin-readout contrast. Although generation by oxygen implantation has been reported very recently, nonuniform spin and optical properties and the limited generation depth of implanted defects hinder both high-sensitivity sensing and conclusive microscopic identification. Here we engineer high-quality defects by decoupling oxygen incorporation and defect formation, realizing highly homogeneous spin-resonance frequencies as well as narrow optical linewidths and long T2* coherence time. Further, we demonstrate defect formation beyond the ion range utilizing oxygen diffusion, exceptional among impurities in SiC. We further provide hyperfine-interaction statistics of 17O and host nuclei across many PL6 defects, making the oxygen-vacancy origin conclusive. Together, the microscopic identification and the demonstrated formation route establish a foundation for developing the oxygen-vacancy spin defect into a versatile quantum platform.

cond-mat.mtrl-sciCross-listedarXiv:2610.32642•Oct 26, 2026

Prospects for hybrid integrated silicon quantum photonics

Yasutomo Ota, Ryota Katsumi, Alto Osada +4 more

The Japan Society of Applied Physics•Jul 10, 2019•0 citations
Diamond provides unique technological platform for quantum technologies including quantum computing and communication. Controlled fabrication of optically active defects is a key element for such quantum toolkit. Here we report the production of single color centers emitting in the blue spectral region by high energy implantation of carbon ions. We demonstrate that single implanted defects show sub-poissonian statistics of the emitted photons and can be explored as single photon source in quantum cryptography. Strong zero phonon line at 470.5 nm allows unambiguous identification of this defect as interstitial-related TR12 color center.
This review provides an overview of defects in silicon carbide (SiC) with potential applications as quantum qubits. It begins with a brief introduction to quantum qubits and existing qubit platforms, outlining the essential criteria a defect must meet to function as a viable qubit. The focus then shifts to the most promising defects in SiC, notably the silicon vacancy (VSi) and divacancy (VC-VSi). A key challenge in utilizing these defects for quantum applications is their precise and controllable creation. Various fabrication techniques, including irradiation, ion implantation, femtosecond laser processing, and focused ion beam methods, have been explored to create these defects. Designed as a beginner-friendly resource, this review aims to support early-career experimental researchers entering the field of SiC-related quantum qubits. Providing an introduction to defect-based qubits in SiC offers valuable insights into fabrication strategies, recent progress, and the challenges that lie ahead.
Optically addressable paramagnetic defects in silicon carbide (SiC) are attractive for scalable quantum technologies such as quantum sensing. PL5, PL6, and PL7 are promising defects for their high brightness and spin-readout contrast. Although generation by oxygen implantation has been reported very recently, nonuniform spin and optical properties and the limited generation depth of implanted defects hinder both high-sensitivity sensing and conclusive microscopic identification. Here we engineer high-quality defects by decoupling oxygen incorporation and defect formation, realizing highly homogeneous spin-resonance frequencies as well as narrow optical linewidths and long T2* coherence time. Further, we demonstrate defect formation beyond the ion range utilizing oxygen diffusion, exceptional among impurities in SiC. We further provide hyperfine-interaction statistics of 17O and host nuclei across many PL6 defects, making the oxygen-vacancy origin conclusive. Together, the microscopic identification and the demonstrated formation route establish a foundation for developing the oxygen-vacancy spin defect into a versatile quantum platform.