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Nanophotonics

Steering coherence in quantum dots by carriers injection via tunneling

Igor Khanonkin, Sven Bauer, Ori Eyal, Johann Peter Reithmaier, G. Eisenstein

Published Jun 20, 2022• 0 citations
Publisher

Abstract

Coherent control is a key experimental technique for quantum optics and quantum information processing. We demonstrate a new degree of freedom in coherent control of semiconductor quantum dot (QD) ensembles operating at room temperature using the tunneling injection (TI) processes in which charge carriers tunnel directly from a quantum well reservoir to QD confined states. The TI scheme was originally proposed and implemented to improve QD lasers and optical amplifiers, by providing a direct injection path of cold carriers thereby eliminating the hot carrier injection problem which enhances gain nonlinearity. The impact of the TI processes on the coherent time of the QDs was never considered, however. We show here that since the cold carriers that tunnel to the oscillating QD state are incoherent, the rate of injection determines the coherent time of the QDs thereby controlling coherent light-matter interactions. Coherent interactions by means of Rabi oscillations were demonstrated in absorption and for weak excitation pulses in the gain regime. However, Rabi oscillations are totally diminished under strong excitation pulses which increase the rate of stimulated emission, causing the tunneling processes to dominate what shortens the coherence time significantly. Since the tunneling rate, and hence, the coherence time, were controlled by the optical excitation and electrical bias, our finding paves the way for TI-based coherence switching on a sub-picosecond time scale in room-temperature semiconductor nanometric structures.

DOI
10.1515/nanoph-2022-0184

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Coherent control is a key experimental technique for quantum optics and quantum information processing. We demonstrate a new degree of freedom in coherent control of semiconductor quantum dot (QD) ensembles operating at room temperature using the tunneling injection (TI) processes in which charge carriers tunnel directly from a quantum well reservoir to QD confined states. The TI scheme was originally proposed and implemented to improve QD lasers and optical amplifiers, by providing a direct injection path of cold carriers thereby eliminating the hot carrier injection problem which enhances gain nonlinearity. The impact of the TI processes on the coherent time of the QDs was never considered, however. We show here that since the cold carriers that tunnel to the oscillating QD state are incoherent, the rate of injection determines the coherent time of the QDs thereby controlling coherent light-matter interactions. Coherent interactions by means of Rabi oscillations were demonstrated in absorption and for weak excitation pulses in the gain regime. However, Rabi oscillations are totally diminished under strong excitation pulses which increase the rate of stimulated emission, causing the tunneling processes to dominate what shortens the coherence time significantly. Since the tunneling rate, and hence, the coherence time, were controlled by the optical excitation and electrical bias, our finding paves the way for TI-based coherence switching on a sub-picosecond time scale in room-temperature semiconductor nanometric structures.
Light matter coherent interactions require that the coherent state induced in the matter be maintained for the duration of the observation. The only way to induce and observe such interactions in room temperature semiconductors, where the coherence time is of the order of a few hundred femtoseconds, is to use ultrashort pulse excitations and an ultrafast characterization technique. For media comprising an ensemble of nanostructure semiconductors such as self-assembled quantum dots, the gain broadening inhomogeneity also affects the interaction. Moreover, when gain media in the form of an active waveguide, such as optical amplifiers, are used, the interaction is distributed and includes nonresonant incoherent phenomena that occur simultaneously with the coherent effects. Such a complex system can exhibit, nevertheless, clear coherent interactions even at room temperature. Using InAs/InP quantum dot and wirelike quantum dash amplifiers, Rabi oscillations, self-induced transparency, coherent control using spectral pulse shaping, Ramsey interference, and photon echo have been demonstrated. The characterization employed cross frequency resolved optical gating, and the experiments were accompanied by a comprehensive finite difference time domain model that solves the Maxwell and Lindblad equations. This work has major implications on the understanding of the details of dynamical processes in active semiconductor devices, on short pulse generation from semiconductor lasers, and on various future quantum devices.
The recent progress in the manufacturing of semiconductor quantum dots (QD) systems has made possible the coherent control of quantum states in QDs using optical or electrical techniques. Laser pulses have been recently used to coherently coponto quânticontrol the exciton population in QDs. The coherent manipulation of quantum states is a high priority task to the development of quantum information and quantum computation. One particular signature of coherency in quantum systems is the Rabi oscillations, which were recently observed in a few experimental works. Here we theoretically study a system composed of a semiconductor QD, tunnel coupled to electron reservoirs. In the presence of a laser field an electron-hole pair is created in the QD. An external source-drain (bias) voltage allows electrons and holes to tunnel to the reservoirs. The study was developed via the non-equilibrium Green s function technique. We solve numerically a set of coupled differential equations to the retarded and lesser Green functions. This gives the occupation probabilities of the two levels of the QD and the laserinduced photocurrent as a function of time. We focus our attention on the effects of temperature on the Rabi oscillations. Our main findings encompass a thermal activated Pauli blockade of the Rabi oscillations that can be controlled via the reservoirs temperature. We also discussed the effects of this thermal activation of Pauli blockade on the photocurrent. These results suggest that ability to measure temperatures via quantum coherent signals, thus suggesting the possibility of a new quantum-dot based thermometer.
We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.
Coherence in light–matter interaction is a necessary ingredient if light is used to control the quantum state of a material system. Coherent effects are firmly associated with isolated systems kept at low temperature. The exceedingly fast dephasing in condensed matter environments, in particular at elevated temperatures, may well erase all coherent information in the material at timescales shorter than a laser excitation pulse. Here we show for an ensemble of semiconductor quantum dots that even in the presence of ultrafast dephasing, for suitably designed condensed matter systems quantum-coherent effects are robust enough to be observable at room temperature. Our conclusions are based on an analysis of the reshaping an ultrafast laser pulse undergoes on propagation through a semiconductor quantum dot amplifier. We show that this pulse modification contains the signature of coherent light–matter interaction and can be controlled by adjusting the population of the quantum dots via electrical injection. Quantum coherence effects are often only visible at low temperatures, where dephasing times are not too short. Here Kolarczik et al. show that quantum coherence effects can appear in the reshaping of ultrafast laser pulses passing through quantum dots even at room temperature.
We demonstrate the ability to control quantum coherent Rabi-oscillations in a room-temperature quantum dot semiconductor optical amplifier (SOA) by shaping the light pulses that trigger them. The experiments described here show that when the excitation is resonant with the short wavelength slope of the SOA gain spectrum, a linear frequency chirp affects its ability to trigger Rabi-oscillations within the SOA: A negative chirp inhibits Rabi-oscillations whereas a positive chirp can enhance them, relative to the interaction of a transform limited pulse. The experiments are confirmed by a numerical calculation that models the propagation of the experimentally shaped pulses through the SOA.
The use of ultrashort pulses allows to induce and observe quantum coherent effects in optical gain media where the coherence time is longer than the excitation pulses namely, room temperature quantum dot ensembles. We use InAs/InP quantum dot optical amplifiers as the experimental platform and have demonstrated effects such as coherently controlled Rabi Oscillations, Ramsey Fringes, Photon`Echoes, Prolongation of dephasing time via induced three pulse photon echoes. Recently we have advanced the field by demonstrating a hallmark experiment of quantum optics: Quantum Coherent collapse and revival which was never observed in a solid let alone at room temperature.