Abstract We study the half-filled Hubbard model with Anderson and Coulomb disorder by mean of dynamical mean field theory using the geometrically averaged local density of states. The paramagnetic phase diagram of the model as a function of the Coulomb interaction and Anderson disorder strength is obtained. The spectral phase diagrams of the ground states for the model are also constructed and discussed. We show that in the intermediate and strong interaction regimes, the Coulomb disorder leads the metallic and Mott insulator phase regions shrink, while the Anderson insulator region is enlarged.
Abstract We study the half-filled Hubbard model with Anderson and Coulomb disorder by mean of dynamical mean field theory using the geometrically averaged local density of states. The paramagnetic phase diagram of the model as a function of the Coulomb interaction and Anderson disorder strength is obtained. The spectral phase diagrams of the ground states for the model are also constructed and discussed. We show that in the intermediate and strong interaction regimes, the Coulomb disorder leads the metallic and Mott insulator phase regions shrink, while the Anderson insulator region is enlarged.
We investigate the effects of Coulomb disorder on the half-filled ionic Hubbard model within the framework of dynamical mean-field theory (DMFT), using the equation-of-motion method as the impurity solver, combined with typical medium theory (TMT). In contrast to conventional disordered Hubbard models, the ionic Hubbard model contains a staggered ionic potential that introduces additional competition between band-insulating and correlation-driven insulating tendencies. We analyze how this ionic potential modifies the electronic phases induced by Coulomb disorder through the arithmetic and geometric averages of the local density of states. In the absence of disorder, the system exhibits metallic (M), Mott-insulating (MI), and band-insulating (BI) phases. When Coulomb disorder is introduced, Anderson-insulating (AI) behavior and localized states (LS) inside the Mott gap are also observed. In particular, the LS regime appears between the metallic and Mott-insulating phases at small ionic potentials, whereas the AI regime develops for sufficiently large values of the Coulomb interaction and ionic potential. Our results show that the interplay between ionic potential, electron correlation, and disorder substantially influences the localization behavior and insulating characteristics of the ionic Hubbard model.
Abstract We consider Anderson localization in the half-filled Anderson–Hubbard model in the presence of either random on-site interactions or spatially alternating interactions in the lattice. By using dynamical mean field theory with the equation of motion method as an impurity solver, we calculate the arithmetically and geometrically averaged local density of states and derive the equations determining the critical value for the phase transition between metallic, Anderson and Mott insulating phases. The nonmagnetic ground state phase diagrams are constructed numerically. We figure out that the presence of Coulomb disorder drives the system toward the Anderson localized phase that can occur even in the absence of Anderson structural disorder. For the spatially alternating interactions, we find that the metallic region is reduced and the Anderson insulator one is enlarged with increasing interaction modulation. Our obtained results are relevant to current research in ultracold atoms in disordered optical lattices where metal–insulator transition can be observed experimentally by using ultracold atom techniques.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.
Strongly correlated fermions in a crystal or in an optical lattice in the presence of binary-alloy disorder are investigated. We employ the statistical dynamical mean-field theory, which incorporates both fluctuations due to disorder and local correlations due to interaction, to solve the Anderson-Hubbard model. Localization due to disorder is studied by means of the probability distribution function of the local density of states. We obtain a complete paramagnetic ground state phase diagram consisting of disordered correlated metal, Anderson-Mott insulator, and band insulator.
We have studied a disordered ${N}_{\mathrm{c}}\ifmmode\times\else\texttimes\fi{}{N}_{\mathrm{c}}$ plaquette Hubbard model on a two-dimensional square lattice at half-filling using a coherent potential approximation (CPA) in combination with a single-site dynamical mean field theory (DMFT) approach with a paramagnetic bath. Such a model conveniently interpolates between the ionic Hubbard model at Nc=2 and the Anderson model at ${N}_{\mathrm{c}}=\ensuremath{\infty}$ and enables the analysis of the various limiting properties. We confirmed that within the CPA approach a band insulator behavior appears for noninteracting strongly disordered systems with a small plaquette size Nc=4, while the paramagnetic Anderson insulator with nearly gapless density of states is present for large plaquette sizes Nc=48. When the interaction U is turned on in the strongly fluctuating random potential regions, the electrons on the low energy states push each other into high energy states in DMFT in a paramagnetic bath and correlated metallic states with a quasiparticle peak and Hubbard bands emerge, though a larger critical interaction U is needed to obtain this state from the paramagnetic Anderson insulator (Nc=48) than from the band insulator (Nc=4). Finally, we observe a Mott insulator behavior in the strong interaction U regions for both Nc=4 and Nc=48 independent of the disorder strength. We discuss the application of this model to real materials.
We review recent progress in our theoretical understanding of strongly correlated fermion systems in the presence of disorder. Results were obtained by the application of a powerful nonperturbative approach, the dynamical mean-field theory (DMFT), to interacting disordered lattice fermions. In particular, we demonstrate that DMFT combined with geometric averaging over disorder can capture Anderson localization and Mott insulating phases on the level of one-particle correlation functions. Results are presented for the ground state phase diagram of the Anderson–Hubbard model at half-filling, both in the paramagnetic phase and in the presence of antiferromagnetic order. We find a new antiferromagnetic metal which is stabilized by disorder. Possible realizations of these quantum phases with ultracold fermions in optical lattices are discussed.