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Springer eBooks

Trapped Ion Temperature

Published Nov 9, 2005• 0 citations
Publisher
DOI
10.1007/3-540-26576-7_10

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Sub-kelvin temperature management in ion traps for optical clocks

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The uncertainty of the ac Stark shift due to thermal radiation represents a major contribution to the systematic uncertainty budget of state-of-the-art optical atomic clocks. In the case of optical clocks based on trapped ions, the thermal behavior of the rf-driven ion trap must be precisely known. This determination is even more difficult when scalable linear ion traps are used. Such traps enable a more advanced control of multiple ions and have become a platform for new applications in quantum metrology, simulation, and computation. Nevertheless, their complex structure makes it more difficult to precisely determine its temperature in operation and thus the related systematic uncertainty. We present here scalable linear ion traps for optical clocks, which exhibit very low temperature rise under operation. We use a finite-element model refined with experimental measurements to determine the thermal distribution in the ion trap and the temperature at the position of the ions. The trap temperature is investigated at different rf-drive frequencies and amplitudes with an infrared camera and integrated temperature sensors. We show that for typical trapping parameters for In+, Al+, Lu+, Ca+, Sr+, or Yb+ ions, the temperature rise at the position of the ions resulting from rf heating of the trap stays below 700 mK and can be controlled with an uncertainty on the order of a few 100 mK maximum. The corresponding uncertainty of the trap-related blackbody radiation shift is in the low 10−19 and even 10−20 regime for 171Yb+(E3) and 115In+, respectively.

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Electric-field noise from ion-trap electrode surfaces can limit the fidelity of multiqubit entangling operations in trapped-ion quantum information processors and can give rise to systematic errors in trapped-ion optical clocks. The underlying mechanism for this noise is unknown, but it has been shown that the noise amplitude can be reduced by energetic ion bombardment, or ``ion milling,'' of the trap electrode surfaces. Using a single trapped $^{88}\mathrm{Sr}^{+}$ ion as a sensor, we investigate the temperature dependence of this noise both before and after ex situ ion milling of the trap electrodes. Making measurements over a trap electrode temperature range of 4 K to 295 K in both sputtered niobium and electroplated gold traps, we see a marked change in the temperature scaling of the electric-field noise after ion milling: power-law behavior in untreated surfaces is transformed to Arrhenius behavior after treatment. The temperature scaling becomes material-dependent after treatment as well, strongly suggesting that different noise mechanisms are at work before and after ion milling. To constrain potential noise mechanisms, we measure the frequency dependence of the electric-field noise, as well as its dependence on ion-electrode distance, for niobium traps at room temperature both before and after ion milling. These scalings are unchanged by ion milling.

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Inline cryogenically cooled radio-frequency ion trap as a universal injector for cold ions into an electrostatic ion-beam storage ring: Probing and modeling the dynamics of rotational cooling of OH −

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We describe the setup and characterization of a cryogenic multipole radio-frequency (RF) ion trap that enables the accumulation and cooling of mass-selected ions before injection into the SAPHIRA storage ring. To characterize the RF trap setup, we use ${\mathrm{OH}}^{\ensuremath{-}}$ anions and explore the threshold photodetachment cross section measured after storage in SAPHIRA as a probe of the rotational temperature. Beyond the temperature of the ion trap assembly, cooled to 6 K, the final rotational temperature of the ${\mathrm{OH}}^{\ensuremath{-}}$ ions is strongly influenced by the density of cooled He and the actual number of trapped ions while much less affected (possibly unaffected) by the time-varying field of the trap. To obtain rotationally cold ${\mathrm{OH}}^{\ensuremath{-}}$ ions, the RF trap must be operated with low He density and a low number of ions. High He densities, corresponding to a strong coupling of the trapped ions and He gas, lead to a significant rotational heating of the trapped ion ensemble, and the He density seems to limit the actual reachable rotational temperature. We demonstrate that cold ions in the RF trap remain cold for at least 30 ms in the SAPHIRA (300 K) storage ring at a base pressure of $\ensuremath{\sim}8\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}9}\phantom{\rule{0.16em}{0ex}}\mathrm{mbar}$.

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Springer eBooks•Jan 1, 2000•4 citations
The uncertainty of the ac Stark shift due to thermal radiation represents a major contribution to the systematic uncertainty budget of state-of-the-art optical atomic clocks. In the case of optical clocks based on trapped ions, the thermal behavior of the rf-driven ion trap must be precisely known. This determination is even more difficult when scalable linear ion traps are used. Such traps enable a more advanced control of multiple ions and have become a platform for new applications in quantum metrology, simulation, and computation. Nevertheless, their complex structure makes it more difficult to precisely determine its temperature in operation and thus the related systematic uncertainty. We present here scalable linear ion traps for optical clocks, which exhibit very low temperature rise under operation. We use a finite-element model refined with experimental measurements to determine the thermal distribution in the ion trap and the temperature at the position of the ions. The trap temperature is investigated at different rf-drive frequencies and amplitudes with an infrared camera and integrated temperature sensors. We show that for typical trapping parameters for In+, Al+, Lu+, Ca+, Sr+, or Yb+ ions, the temperature rise at the position of the ions resulting from rf heating of the trap stays below 700 mK and can be controlled with an uncertainty on the order of a few 100 mK maximum. The corresponding uncertainty of the trap-related blackbody radiation shift is in the low 10−19 and even 10−20 regime for 171Yb+(E3) and 115In+, respectively.
Electric-field noise from ion-trap electrode surfaces can limit the fidelity of multiqubit entangling operations in trapped-ion quantum information processors and can give rise to systematic errors in trapped-ion optical clocks. The underlying mechanism for this noise is unknown, but it has been shown that the noise amplitude can be reduced by energetic ion bombardment, or ``ion milling,'' of the trap electrode surfaces. Using a single trapped 88Sr+^{88}\mathrm{Sr}^{+}88Sr+ ion as a sensor, we investigate the temperature dependence of this noise both before and after ex situ ion milling of the trap electrodes. Making measurements over a trap electrode temperature range of 4 K to 295 K in both sputtered niobium and electroplated gold traps, we see a marked change in the temperature scaling of the electric-field noise after ion milling: power-law behavior in untreated surfaces is transformed to Arrhenius behavior after treatment. The temperature scaling becomes material-dependent after treatment as well, strongly suggesting that different noise mechanisms are at work before and after ion milling. To constrain potential noise mechanisms, we measure the frequency dependence of the electric-field noise, as well as its dependence on ion-electrode distance, for niobium traps at room temperature both before and after ion milling. These scalings are unchanged by ion milling.
We describe the setup and characterization of a cryogenic multipole radio-frequency (RF) ion trap that enables the accumulation and cooling of mass-selected ions before injection into the SAPHIRA storage ring. To characterize the RF trap setup, we use ${\mathrm{OH}}^{\ensuremath{-}}$ anions and explore the threshold photodetachment cross section measured after storage in SAPHIRA as a probe of the rotational temperature. Beyond the temperature of the ion trap assembly, cooled to 6 K, the final rotational temperature of the ${\mathrm{OH}}^{\ensuremath{-}}$ ions is strongly influenced by the density of cooled He and the actual number of trapped ions while much less affected (possibly unaffected) by the time-varying field of the trap. To obtain rotationally cold ${\mathrm{OH}}^{\ensuremath{-}}$ ions, the RF trap must be operated with low He density and a low number of ions. High He densities, corresponding to a strong coupling of the trapped ions and He gas, lead to a significant rotational heating of the trapped ion ensemble, and the He density seems to limit the actual reachable rotational temperature. We demonstrate that cold ions in the RF trap remain cold for at least 30 ms in the SAPHIRA (300 K) storage ring at a base pressure of $\ensuremath{\sim}8\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}9}\phantom{\rule{0.16em}{0ex}}\mathrm{mbar}$.