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Science in China Series A-Mathematics (in Chinese)

InAs/GaAs单电子量子点量子比特的失相率

厚植 郑, 松林 封, 金龙 刘, 留仙 潘, 智川 牛, 树深 李

Published Jun 1, 2002• 2 citations
Publisher
DOI
10.1360/za2002-33-6-556

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我们从单个 InAs/GaAs 自我装配的 Stranski-Krastanow 量点在单个光子排放上报导直到 80 K 在下面搏动并且连续波浪刺激。在温度 80 K，在零次延期的秒顺序关联功能， g (2 )(0 ) ，被测量为搏动的刺激是 0.422。在在连续波浪刺激下面的一样的温度，光子 antibunching 效果被观察。因此，我们的试验性的结果在液体氮温度在单个光子排放演示自我装配的 InAs/GaAs 量点的一个有希望的潜在的应用程序。[从作者抽象]

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InSb has been shown to exhibit bistability and a very large nonlinear index.1 A semiconductor which is similiar, but which has a bandgap at shorter wavelengths is InAs. In this talk we present measurements of saturable absorption in InAs using an HF laser, which matches the bandgap of InAs at temperatures from 5° to 100° K. Using these measurements we have calculated a nonlinear refractive index of n2 = 2x10−5 cm2/W for light near but below the bandgap. These numbers are comparable to those measured in InSb and indicate that InAs may be a good material for bistable devices.
我们从单个 InAs/GaAs 自我装配的 Stranski-Krastanow 量点在单个光子排放上报导直到 80 K 在下面搏动并且连续波浪刺激。在温度 80 K，在零次延期的秒顺序关联功能， g (2 )(0 ) ，被测量为搏动的刺激是 0.422。在在连续波浪刺激下面的一样的温度，光子 antibunching 效果被观察。因此，我们的试验性的结果在液体氮温度在单个光子排放演示自我装配的 InAs/GaAs 量点的一个有希望的潜在的应用程序。[从作者抽象]
Cryogenic Hybrid Superconducting Electronics In article 2416957, Alessandro Paghi and co-workers propose the InAs-on-Insulator (InAsOI), a new platform for developing superconducting electronics. An epilayer of semiconducting InAs with different electron densities is grown onto a cryogenic insulating InAlAs metamorphic buffer, used to decouple adjacent devices electrically. Josephson junctions with a high supercurrent density are fabricated employing Al as a superconductor and InAsOI with different electron densities.