We propose to employ a selective formation method to embed an isolated self assembled quantum dot into a n-i-n junction to implement single electron transistors (SETs). The absorption and emission spectrum of SETs are theoretically studied by the Keldysh Green function method. The electronic levels and Coulomb interactions of electrons of InAs quantum dot (QD) are evaluated by an effective mass model. It is found that Coulomb interaction and level mixing in the many body open system lead to double peaks associated with the intraband transitions involving two lowest levels of the QD. We can electrically control the SETs as a single-photon source and double-photon source for 10 μm wavelength. The single photon source can be used in the application of quantum cryptograph, and the double-photon source can be utilized in the teleportation.
We propose to employ a selective formation method to embed an isolated self assembled quantum dot into a n-i-n junction to implement single electron transistors (SETs). The absorption and emission spectrum of SETs are theoretically studied by the Keldysh Green function method. The electronic levels and Coulomb interactions of electrons of InAs quantum dot (QD) are evaluated by an effective mass model. It is found that Coulomb interaction and level mixing in the many body open system lead to double peaks associated with the intraband transitions involving two lowest levels of the QD. We can electrically control the SETs as a single-photon source and double-photon source for 10 μm wavelength. The single photon source can be used in the application of quantum cryptograph, and the double-photon source can be utilized in the teleportation.
Summary form only given. A source of single photons, each arriving within a known time interval, would be useful in the new field of quantum cryptography, where security from eavesdropping requires that only one photon be sent at a time. While other recent efforts to generate single photons have relied on saturated absorption in a single quantum emitter such as a molecule our method takes advantage of the emission properties of a single emitter, an InAs dot. When a laser pulse creates multiple electron-hole pairs (excitons), the last pair to recombine creates a photon at a unique wavelength, which can be spectrally separated from the others. This is because Coulomb interactions shift the emission wavelength when multiple excitons are present.
Semiconductor quantum dots (QDs) are well established as sub-Poissonian sources of entangled photon pairs. To improve the utility of a QD light source, it would be advantageous to extend their emission further into the near infrared, into the low absorption wavelength windows utilised in long-haul optical telecommunication. Initial experiments succeeded in interfering O-band (1260—1360 nm) photons from an InAs/GaAs QD with dissimilar photons from a laser, an important mechanism for quantum teleportation. Interference visibilities as high as 60 ± 6 % were recorded, surpassing the 50 % threshold imposed by classical electrodynamics. Later, polarisation-entanglement of a similar QD was observed, with pairs of telecom-wavelength photons from the radiative cascade of the biexciton state exhibiting fidelities of 92.0 ± 0.2 % to the Bell state. Subsequently, an O-band telecom-wavelength quantum relay was realised. Again using an InAs/GaAs QD device, this represents the first implementation of a sub-Poissonian telecom-wavelength quantum relay, to the best knowledge of the author. The relay proved capable of implementing the famous four-state BB84 protocol, with a mean teleportation fidelity as high as 94.5 ± 2.2 %, which would contribute 0.385 secure bits per teleported qubit. After characterisation by way of quantum process tomography, the performance of the relay was also evaluated to be capable of implementing a six-state QKD protocol. In an effort to further extend the emitted light from a QD into the telecom C-band (1530—1565 nm), alternative material systems were investigated. InAs QDs on a substrate of InP were shown to emit much more readily in the fibre-telecom O- and C-bands than their InAs/GaAs counterparts, largely due to the reduced lattice mismatch between the QD and substrate for InAs/InP (~3 %) compared to InAs/GaAs (~7 %). Additionally, to minimize the fine structure splitting (FSS) of the exciton level, which deteriorates the observed polarisation-entanglement, a new mode of dot growth was investigated. Known as droplet epitaxy (D-E), QDs grown in this mode showed a fourfold reduction in the FSS compared to dots grown in the Stranski-Krastanow mode. This improvement would allow observation of polarisation-entanglement in the telecom C-band. In subsequent work performed by colleagues at the Toshiba Cambridge Research Labs, these D-E QDs were embedded in a p-i-n doped optical cavity, processed with electrical contacts, and found to emit entangled pairs of photons under electrical excitation. The work of this thesis provides considerable technological advances to the field of entangled-light sources, that in the near future may allow for deterministic quantum repeaters operating at megahertz rates, and in the further future could facilitate the distribution of coherent multipartite states across a distributed quantum network.
Summary form only given. Optical logic down to the single photon level holds the promise of data processing with a better energy efficiency than electronic devices [1]. In addition, preservation of quantum coherence in such logical components would enable optical quantum logical gates [2-8]. Optical logic requires optical non-linearities to allow for photon-photon interactions. Non-linearities usually appear for large intensities, but discrete transitions in a well coupled single two-level system allow for giant non-linearities operating at the single photon level.This is achieved by engineering what has been coined a "one-dimensional atom" [2], wherein a light emitter is predominantly coupled to a single propagating spatial mode. This favored coupling with a traveling mode is obtained either in a resonant optical cavity [3,4] or with non-resonant field confinement such as in single mode waveguides [5,6] or through the interaction with a focused optical beam [7,8] . Here we take advantage of the large coupling efficiency and the broadband operation of a photonic wire containing a semiconductor quantum dot (QD) [9] to implement a transistor using two different optical QD transitions. Our system is made of a single InAs QD embedded in a GaAs tapered photonic wire (fig. 1a). This system, in which the QD is efficiently coupled to a single guided mode, has been exploited to realize ultrabright single-photon sources [9]. We exploit here its broad operation bandwidth (>100 nm around 950 nm) to efficiently address two different transitions of the QD with two different laser beams to implement a two-color giant non-linearity: a weak probe laser has its reflectivity controlled by a few photons of the control laser.
Subject of study. A single InAs quantum dot in a one-dimensional photonic crystal based on GaAs is examined. Aim of study. The aim of this study is to develop a method for controlling photon emission frequencies from a single quantum dot within a one-dimensional photonic crystal based on changes in the electromagnetic mass of an electron in the photonic crystal medium. Method. The proposed approach leverages the effect of changing the electromagnetic mass of an electron in the photonic crystal medium, manifesting as corrections to electron energy levels depending on the optical density of the medium. To control this density, the injection of free charge carriers and the quadratic electro-optic Kerr effect are proposed. Main results. The feasibility of in situ control of photon emission frequencies from a quantum dot was demonstrated using quantum transitions between the p- and s-states of a hydrogen-like InAs quantum dot situated in the air voids of a one-dimensional GaAs photonic crystal. This control is achieved through the effect of changing the electromagnetic mass of an electron, as well as tuning the refractive index of the photonic crystal via free charge carrier injection and the electro-optic Kerr effect. Calculations indicate that the photon energy control range available in experiments is limited to several tens of microelectronvolts, restricting practical applicability, and the observed displacement effect is smaller than experimentally recorded values. However, the energy level displacement, influenced by the quantum electrodynamic effect under investigation, exhibits a quadratic dependence on the refractive index of the material forming the photonic crystal. Consequently, the method is expected to scale significantly with increasing optical density. Such photonic crystals could be constructed using metamaterials with a high refractive index. Practical significance. The findings of this study, centered on developing a method for controlling photon emission frequencies from a single quantum dot in a one-dimensional photonic crystal, lay the groundwork for photon-emitter interfaces. These interfaces will incorporate key quantum functionalities, including photonic qubits, single-photon light sources, and nonlinear quantum photon-photon gates.
Recent studies in self-assembled InAs quantum dots (QDs) for applications in quantum information processing have demonstrated initialization, readout and long decoherence time of an electron spin confined in a single QD. These arguably fulfill three out of the five DiVincenzo criteria for the physical implementation of quantum computation. Based on recent developments self-assembled InAs quantum dot molecules (QDMs), several advancements in the optical manipulation of two-electron spin states have been made. As a continuation of these studies towards a full two-qubit system, this thesis addresses one of the remaining criteria concerning a universal set of quantum gates. The physical platform for two-qubit gates is provided by two electrons confined in the QDM where the Coulomb exchange interaction gives rise to the singlet and triplet manifolds. In a transverse magnetic field, an eight-level system consisting of four singlet-triplet spin states, four optical excited states and twelve dipole allowed transitions arises. Spin initialization via multi-laser optical pumping is demonstrated with near unity fidelity for three of the spin states, while the remaining one can, in principle, be achieved by coherent optical pumping using four CW lasers. The effects of dynamic nuclear spin polarization, arising from the coupling between the electrons and the surrounding nuclei, is evident in the frequency pulling and pushing lineshapes in absorption profiles. This thesis shows that the optical nuclear spin locking that was demonstrated in a single QD earlier is effective in QDMs, yielding a long spin decoherence time of about 1 microsecond. Spectroscopic evidence suggests that this is accompanied by the first evidence of a narrowing in the Overhauser field distribution. The results reveal that stabilization of nuclear spin polarization in both QDs is achieved by optical manipulations in the top QD, demonstrating the effect of non-local nuclear spin locking. Finally, it is shown theoretically that pulsed excitation results in single spin rotations and in conjunction with the Coulomb exchange interaction, provides the ingredients for a universal two-qubit gate. A feasible experimental demonstration of the two-qubit gate is proposed, along with the methodology for the population readout of individual spin states.