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International Conference on Ultrafast Phenomena

Resonant Optical Kerr Response with Ultrashort Decay Time by Nonlocal Wave Coupling of Light and Excitons

Masayoshi Ichimiya, Takayuki Umakoshi, H. Murata, T. Kinoshita, Hajime Ishihara, Masaaki Ashida

Published Jan 1, 2014• 0 citations
Publisher

Abstract

Resonant optical Kerr effects have been investigated in high-quality CuCl thin films. The peculiar spectral feature and ultrafast response below 200 fs due to a long-range coherent coupling between light and multinode-type excitons are observed.
DOI
10.1364/up.2014.08.tue.p2.47

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We demonstrate ultrafast superradiance showing 10-fs decay due to the nonlocal interaction between light waves and exciton waves in CuCl mesoscopic thin films. This time constant is comparable with the thermal dephasing even at room temperature. Actually, we observed photoluminescence signal from one confined mode of translational motion of the exciton surviving at room temperature. In addition, temperature dependence of the photoluminescence spectra with multiple peaks was reproduced well by theoretical calculation. This finding opens a new avenue of “thermal free photonics”, where the exciton coherence is utilized at higher temperature.
We observe ultrafast and large nonlinear optical responses of a semiconductor thin film where excitons are weakly confined and their center-of-mass motion is quantized. The observed degenerate four-wave mixing (DFWM) signal of a GaAs double-hetero-structure layer exhibits an anomalous thickness-dependence, and is much enhanced at the thickness of 110nm. The decay time of the response is the order of ps, which depends on the thickness of the layer and on the number of the layer. These phenomena are elucidated by the theory of the nonlocal interaction between excitonic states and the light beyond the long wavelength approximation regime. The enhancement at the thickness is due to the size-resonant enhancement of the internal field with a nano-scale spatial structure, where the second quantized level of the exciton center-of-mass motion mainly contributes to the large response at the thickness. We, furthermore, demonstrate ultrafast response in a reflective type nonlinear polarization rotation switch with the 110nm thick three double-hetero. The signal intensity of 20% for the reflective pulse was obtained at a pump intensity of 10nJ/cm2, and the decay time is 1.5ps at low temperatures. These results provide a novel design of a semiconductor structure in order to obtain both large and ultrafast nonlinear response that is suitable for device application.