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TYPICAL-MEDIUM THEORY OF MOTT–ANDERSON LOCALIZATION

V. Dobrosavljević

Published Jun 1, 2010• 1 citation
Publisher

Abstract

The Mott and the Anderson routes to localization have long been recognized as the two basic processes that can drive the metal-insulator transition (MIT).Theories separately describing each of these mechanisms were discussed long ago, but an accepted approach that can include both has remained elusive.The lack of any obvious static symmetry distinguishing the metal from the insulator poses another fundamental problem, since an appropriate static order parameter cannot be easily found.More recent work, however, has revisited the original arguments of Anderson and Mott, which stressed that the key diference between the metal end the insulator lies in the dynamics of the electron.This physical picture has suggested that the "typical" (geometrically averaged) escape rate τ -1 typ = exp ln τ -1 esc from a given lattice site should be regarded as the proper dynamical order parameter for the MIT, one that can naturally describe both the Anderson and the Mott mechanism for localization.This article provides an overview of the recent results obtained from the corresponding Typical-Medium Theory, which provided new insight into the the two-fluid character of the Mott-Anderson transition. I. FROM METAL TO INSULATOR: A NEW PERSPECTIVETo understand many, if not most exotic new materials, one has to tackle the difficult problem of understanding the metal-insulator quantum phase transition, as driven by the combined effects of strong electronic correlations and disorder.Traditional approaches to the problem, which emerged in the early 1980s, have focused on examining the perturbative effects of disorder within the Fermi liquid framework.Despite their mathematical elegance, these theories, unfortunately, prove ill-suited to describe several key physical processes, such as tendency to local magnetic moment formation and the approach to the Mott insulating state.In addition, such weak-coupling theories cannot easily describe strongly inhomogeneous phases, with behavior often dominated by broad distributions and rare disorder configurations.This new insight, which is largely driven by experimental advances, seems to suggest that an alternative theoretical picture may provide a better starting point.In this article we describe recent advances based on a new theoretical method, which offers a complementary perspective to the conventional weak-coupling theories.By revisiting the original ides of Anderson and Mott, it examines the typical escape rate from a given site as the fundamental dynamical order parameter to distinguish between a metal and an insulator.This article describes the corresponding Typical-Medium Theory (TMT) and discusses some of its recent results and potential applications.We fist discuss discuss, in some detail, several experimental and theoretical clues suggesting that a new theoretical paradigm is needed.The formulation of TMT for Anderson localization of noninteracting electrons is then discussed, with emphasis on available analytical results.Finally, we review recent progress in applying TMT to the Mott-Anderson transition for disordered Hubbard models, and discuss resulting the two-fluid behavior at the critical point. II. THEORETICAL CHALLENGES: BEYOND CINDERELLA'S SLIPPER?The existence of a sharp metal-insulator transition at T = 0 has been appreciated for many years [1].Experiments on many systems indeed have demonstrated that a well defined critical carrier concentration can easily be identified.On the theoretical side, ambiguities on how to describe or even think of the metal-insulator transition have made it difficult to directly address the nature of the critical region.In practice, one often employs the theoretical tools that are available, even if possibly inappropriate.Even worse, one often focuses on those systems and phenomena that fit an available theoretical mold, ignoring and brushing aside precisely those features that seem difficult to understand.This "Cinderella's slipper" approach is exactly what one should not do; unfortunately it happens all too often.A cure is, of course, given by soberly confronting the experimental reality: what seems paradoxical at first sight often proves to be the first clue to the solution.A. Traditional approaches to disordered interacting electrons

DOI
10.1142/9789814299084_0019

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The Mott and the Anderson routes to localization have long been recognized as the two basic processes that can drive the metal-insulator transition (MIT).Theories separately describing each of these mechanisms were discussed long ago, but an accepted approach that can include both has remained elusive.The lack of any obvious static symmetry distinguishing the metal from the insulator poses another fundamental problem, since an appropriate static order parameter cannot be easily found.More recent work, however, has revisited the original arguments of Anderson and Mott, which stressed that the key diference between the metal end the insulator lies in the dynamics of the electron.This physical picture has suggested that the "typical" (geometrically averaged) escape rate τ -1 typ = exp ln τ -1 esc from a given lattice site should be regarded as the proper dynamical order parameter for the MIT, one that can naturally describe both the Anderson and the Mott mechanism for localization.This article provides an overview of the recent results obtained from the corresponding Typical-Medium Theory, which provided new insight into the the two-fluid character of the Mott-Anderson transition. I. FROM METAL TO INSULATOR: A NEW PERSPECTIVETo understand many, if not most exotic new materials, one has to tackle the difficult problem of understanding the metal-insulator quantum phase transition, as driven by the combined effects of strong electronic correlations and disorder.Traditional approaches to the problem, which emerged in the early 1980s, have focused on examining the perturbative effects of disorder within the Fermi liquid framework.Despite their mathematical elegance, these theories, unfortunately, prove ill-suited to describe several key physical processes, such as tendency to local magnetic moment formation and the approach to the Mott insulating state.In addition, such weak-coupling theories cannot easily describe strongly inhomogeneous phases, with behavior often dominated by broad distributions and rare disorder configurations.This new insight, which is largely driven by experimental advances, seems to suggest that an alternative theoretical picture may provide a better starting point.In this article we describe recent advances based on a new theoretical method, which offers a complementary perspective to the conventional weak-coupling theories.By revisiting the original ides of Anderson and Mott, it examines the typical escape rate from a given site as the fundamental dynamical order parameter to distinguish between a metal and an insulator.This article describes the corresponding Typical-Medium Theory (TMT) and discusses some of its recent results and potential applications.We fist discuss discuss, in some detail, several experimental and theoretical clues suggesting that a new theoretical paradigm is needed.The formulation of TMT for Anderson localization of noninteracting electrons is then discussed, with emphasis on available analytical results.Finally, we review recent progress in applying TMT to the Mott-Anderson transition for disordered Hubbard models, and discuss resulting the two-fluid behavior at the critical point. II. THEORETICAL CHALLENGES: BEYOND CINDERELLA'S SLIPPER?The existence of a sharp metal-insulator transition at T = 0 has been appreciated for many years [1].Experiments on many systems indeed have demonstrated that a well defined critical carrier concentration can easily be identified.On the theoretical side, ambiguities on how to describe or even think of the metal-insulator transition have made it difficult to directly address the nature of the critical region.In practice, one often employs the theoretical tools that are available, even if possibly inappropriate.Even worse, one often focuses on those systems and phenomena that fit an available theoretical mold, ignoring and brushing aside precisely those features that seem difficult to understand.This "Cinderella's slipper" approach is exactly what one should not do; unfortunately it happens all too often.A cure is, of course, given by soberly confronting the experimental reality: what seems paradoxical at first sight often proves to be the first clue to the solution.A. Traditional approaches to disordered interacting electrons
We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of typical-medium theory-the simplest extension of dynamical mean field theory capable of incorporating Anderson localization effects. By making use of previous scaling studies of Anderson impurity models close to the metal-insulator transition, we solve this problem analytically and reveal the dependence of the critical behavior on the particle-hole symmetry. Our main result is that, for sufficiently strong disorder, the Mott-Anderson transition is characterized by a precisely defined two-fluid behavior, in which only a fraction of the electrons undergo a "site selective" Mott localization; the rest become Anderson-localized quasiparticles.
The Mott-Anderson transition in the disordered charge-transfer model displays several new features in comparison to what is found in the disordered single-band Hubbard model, as recently demonstrated by large-scale computational (statistical dynamical mean-field theory) studies. Here we show that a much simpler typical medium theory approach (TMT-DMFT) to the same model is able to capture most qualitative and even quantitative aspects of the phase diagram, the emergence of an intermediate electronic Griffiths phase, and the critical behavior close to the metal-insulator transition. The conceptual and mathematical simplicity of the TMT-DMFT formulation thus makes it possible to gain useful new insight into the mechanism of the Mott-Anderson transition in these models.
Abstract: The metal–insulator transition (MIT) constitutes one of the most profound and persistent problems in condensed matter physics, sitting at the intersection of electronic structure theory, many-body physics, and emergent quantum phenomena. Conventional band theory, which successfully classifies materials as metals or insulators according to the filling of their electronic bands, fails dramatically when confronted with a class of compounds transition metal oxides chief among them that ought to be metallic by band-counting arguments yet are robustly insulating in the laboratory. The resolution of this paradox required abandoning the independent-electron picture entirely and recognizing that strong Coulomb repulsion between electrons can, by itself, drive localization. This insight, formalized by Mott and later distilled into the Hubbard model, established correlation-driven insulation as a phenomenon distinct from band insulation. The present paper offers a theoretical exploration of the MIT problem, tracing its conceptual development from the Mott criterion through the Hubbard Hamiltonian, the Brinkman–Rice scenario of quasiparticle mass divergence, and the watershed development of dynamical mean-field theory (DMFT), which rendered the Mott transition quantitatively tractable for the first time. We argue that the competition between the electronic bandwidth and the on-site interaction encoded in the ratio U/W provides the unifying organizing principle for the field. Building toward the modern frontier, we examine how the Mott transition connects to quantum phase transitions and quantum criticality, where zero-temperature instabilities governed by quantum rather than thermal fluctuations produce non-Fermi-liquid behavior and anomalous scaling. Case studies of vanadium oxides, rare-earth nickelates, and doped cuprates illustrate the diversity and subtlety of real correlated materials. We conclude that the MIT remains a central and unresolved problem whose continued study is increasingly entangled with the development of quantum materials and quantum technologies. Keywords: Metal–Insulator Transition; Mott Insulator; Strongly Correlated Electrons; Hubbard Model; DMFT; Quantum Criticality; Quantum Materials; Condensed Matter Physics
A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the so-called Anderson MIT. Here we analyze interacting particles in disordered Hubbard chains---thus comprising the Mott-Anderson physics---by investigating the ground-state entanglement with density functional theory. The localization signature on entanglement is found to be a decreasing on the entanglement degree in comparison to the clean (without interaction and disorder) case, with local minima at certain critical densities. Individually, the Mott (Anderson) MIT has a single critical density whose minimum entanglement decreases as the interaction (disorder) enhances. While in the Mott MIT entanglement saturates at finite values, characterizing partial localization, in the Anderson MIT the system reaches full localization, with zero entanglement, for sufficiently strong disorder. In the combined Mott-Anderson MIT, we find three critical densities referring to local minima on entanglement. One of them is the same as for the Anderson MIT, but now the presence of interaction requires a stronger disorder potential to induce full localization. A second critical density is related to the Mott MIT, but due to disorder it is displaced by a factor proportional to the concentration of impurities. The third local minimum on entanglement is unique to the concomitant presence of disorder and interaction, found to be related to an effective density phenomenon, thus referred to as a Mott-like MIT. Since entanglement has been intrinsically connected to the magnetic susceptibility---a quantity promptly available in cold-atom experiments---our detailed numerical description might be useful for the experimental investigation of the Mott-Anderson MIT.
We present a complete analytical and numerical solution of the typical medium theory (TMT) for the Anderson metal-insulator transition. This approach self-consistently calculates the typical amplitude of the electronic wave functions, thus representing the conceptually simplest order-parameter theory for the Anderson transition. We identify all possible universality classes for the critical behavior, which can be found within such a mean-field approach. This provides insights into how interaction-induced renormalizations of the disorder potential may produce qualitative modifications of the critical behavior. We also formulate a simplified description of the leading critical behavior, thus obtaining an effective Landau theory for Anderson localization.
We review recent progress in our theoretical understanding of strongly correlated fermion systems in the presence of disorder. Results were obtained by the application of a powerful nonperturbative approach, the dynamical mean-field theory (DMFT), to interacting disordered lattice fermions. In particular, we demonstrate that DMFT combined with geometric averaging over disorder can capture Anderson localization and Mott insulating phases on the level of one-particle correlation functions. Results are presented for the ground state phase diagram of the Anderson–Hubbard model at half-filling, both in the paramagnetic phase and in the presence of antiferromagnetic order. We find a new antiferromagnetic metal which is stabilized by disorder. Possible realizations of these quantum phases with ultracold fermions in optical lattices are discussed.