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Proceedings of the nanoGe Spring Meeting 2022

Overcoming the rate-directionality tradeoff: room-temperature ultrabright single photon sources

Ronen Rapaport

Published Feb 7, 2022• 0 citations
Publisher
DOI
10.29363/nanoge.nsm.2022.220

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Operation at the single-photon level is beneficial for energy efficiency in optical and optoelectronic devices and opens new prospects for novel applications, ranging from quantum cryptography to quantum computations. In this regard, efficient single-photon sources operating upon electrical injection at room temperature are crucially important. Color centers in diamond are currently considered to be the best candidates capable of room temperature operation. These defects in the lattice structure have been studied intensively during the last two decades, and optically driven single-photon sources have been demonstrated. However, the possibility of operation upon electrical injection was not clear until recently mainly because diamond is a unique material at the interface between solid-state and semiconductor physics. The demonstrated photon emission rate under electrical pumping did not exceed a few tens of kcounts per second [1], which is several orders of magnitude lower than the emission rate of optically pumped centers [2] and is well below the level required for practical applications. Since the mechanism of electroluminescence of the color center in diamond was not known, it was not clear to what extent the single-photon emission rate upon electrical injection could be increased.
The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources.However, the reported emission rates are far off what can be achieved by state-of-the-art electrically driven epitaxial quantum dots.Since the electroluminescence mechanism has not yet been elucidated, it is not clear to what extent the emission rate can be increased.Here we develop a theoretical framework to study single-photon emission from color centers in diamond under electrical pumping.The proposed model comprises electron and hole trapping and releasing, transitions between the ground and excited states of the color center as well as structural transformations of the center due to carrier trapping.It provides the possibility to predict both the photon emission rate and the wavelength of emitted photons.Self-consistent numerical simulations of the single-photon emitting diode based on the proposed model show that the photon emission rate can be as high as 100 kcounts s -1 at standard conditions.In contrast to most optoelectronic devices, the emission rate steadily increases with the device temperature achieving of more than 100 Mcount s -1 at 500 K, which is highly advantageous for practical applications.These results demonstrate the potential of color centers in diamond as electrically driven non-classical light emitters and provide a foundation for the design and development of single-photon sources for optical quantum computation and quantum communication networks operating at room and higher temperatures.