Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Frontiers in Optics

Cryogenic optical transitions of T centers in bulk Silicon and Silicon-on-insulator for cavi ty quantum electrodynamics

Jiahui Huang, Murat Can Sarihan, Jin Ho Kang, Baolai L. Liang, Wei Liu, Chee Wei Wong

Published Jan 1, 2021• 1 citation
Publisher

Abstract

We examine the 1325 nm T center transitions and an unknown color center with 1312 nm transitions in ion-implanted bulk Silicon and Silicon-on-insulator. We aim to use it for strong coupling via photonic crystal cavities.
DOI
10.1364/fio.2021.jtu7a.2

Related papers

Cryogenic Optical Transitions in 77Se+ Implanted Si for On-Chip Spin-Photon Interfaces

Murat Can Sarihan, Wei Liu, Jiahui Huang +6 more

We examine and verify the mid-infrared transitions of 77Se+ deep donors in Silicon. We aim to use implanted Se ions as nuclear-spin/photon interfaces for on-chip quantum repeater structures.

Conference on Lasers and Electro-Optics•Jan 1, 2021•0 citations

Cryogenic Optical Transitions Of 77Se+ Deep Donors In Silicon Photonic Crystal Cavity Platforms

Murat Can Sarihan, Wei Liu, Jiahui Huang +6 more

We aim to develop a spin-photon interface to control long-living Se deep donor qubits. As a first step, we examine their mid-infrared transition under weak and strong coupled regime using a photonic crystal cavity.

Frontiers in Optics•Jan 1, 2020•0 citations

Purcell Enhancement of Silicon W Centers in Circular Bragg Grating Cavities

Baptiste Lefaucher, Jean‐Baptiste Jager, V. Calvo +11 more

Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ( F p = 12.5) and efficient luminescence extraction (η coll = 40% for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a 2-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of 65 ± 10% for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons by harnessing cavity quantum electrodynamics in silicon photonic chips.

arXiv:2310.18121•ACS Photonics•Dec 27, 2023•19 citations

Multiemitter cavity quantum electrodynamics in 4H-silicon carbide-on-insulator photonics

Daniil M. Lukin, Melissa A. Guidry, Misagh Ghezellou +6 more

We demonstrate small-ensemble (N ∼ 10 emitters) cavity quantum electrodynamics with silicon vacancy color centers in microresonators using the 4H-Silicon Carbide on Insulator photonics platform.

•Jan 1, 2023•1 citation

T centres in photonic silicon-on-insulator material

E. R. MacQuarrie, Camille Chartrand, Daniel B. Higginbottom +4 more

Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized $\lesssim$100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.

arXiv:2103.03998•Mar 6, 2021•1 citation

A Solid-State Platform for Multiqubit Cavity Quantum Electrodynamics

G. L. van de Stolpe, Roman Dimov, Trung Kien Le +7 more

We develop the integration of focused-ion-beam-implanted V2 centers in a silicon carbide, high-quality-factor (5.4(3) × 10 4 ), low-mode-volume (~ 1.2( λ/n ) 3 ) photonic crystal cavity to study multiqubit cavity-QED.

•Jan 1, 2026•0 citations
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ( F p = 12.5) and efficient luminescence extraction (η coll = 40% for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a 2-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of 65 ± 10% for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons by harnessing cavity quantum electrodynamics in silicon photonic chips.
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized $\lesssim$100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.